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| Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSIST OR HSBD238 Tstg Tj PC VCBO VCEO VCER VEBO IC IC APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Storage Temperature- - - - - Junction Temperature - - - - - - Collector Dissipation Tc=25ae(c)- - Ta=25ae(c) -55~150ae 150ae 25W 100V -80V -100V -5V -6A -2A 1D Emitter, E 2D Collector 3D Base B C Collector-Base Voltage - - - - - Collector-Emitter Voltage - - - - - - - - - Collector-Emitter Voltage- - - - - Emitter-Base Voltage- - - Collector Current Pulse(c) Collector Current DC(c)- ELECTRICAL CHARACTERISTICS Characteristics Collector Cut-off Current Emitter-Base Cut-off Current DC Current Gain Ta=25ae(c) Typ Max -100 -1 40 25 Unit |I A mA Test Conditions VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-150mA VCE=-2V, IC=-1A -0.6 -1.3 -80 3 MHz V V Ic=-1A, IB=-0.1A Ic=-1A, VCE=-2V Ic=-100mA,IB=0 Ic=-250mA, VCE=-10V Symbol ICBO IEBO hFE(1) *hFE(2) *VCE(sat) *VBE(ON) VCEO(SUS) fT Min Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage Current Gain-Bandwidth Product 1.5% Pulsed * Pulse Test:PW=350|I S,Duty CycleU Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSIST OR HSBD238 |
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