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White Light Emitting Diode(InGaN)
KLC-50WC
DIMENSIONS KLC-50W is a high bright InGaN white LED whitout using phorsphor.
Unit : [mm]
Features
* Ultra Wide Viewing Angle * Very Thin Small SMD Package * Single Chip White LED without Phospor
1 1 2
Applications
* Display * Indicator * Key Pad Back Light
2
Maximum Ratings Parameter Reverse Voltage Forward current Pulse forward current Power dissipation Operating temperature Storage temperature Soldering Temperature
*2. Soldering time 5 Sec
*2 *1
[ Ta=25C ]
Symbol VR IF IFP PD Topr. Tstg. Tsol.
Ratings 5 25 60 65 -30 ~ +85 -40 ~ +105 260
Unit V mA mA mW C C C
*1. IFP Measured under duty 1/10 @ 1KHz
Electro-Optical Characteristics Parameter Forward voltage Reverse current Luminous Intensity Color Coordinate Half angle
[ Ta=25C ]
Symbol VF IR Iv x y 21/2
Conditions IF = 20 mA VR = 5 V IF = 20 mA IF = 20 mA IF = 20 mA
Min -
Typ 3.3 230 0.30 0.34 180
Max 3.5 10 -
Unit V uA mcd nm nm deg.
1/2
White Light Emitting Diode(InGaN)
KLC-50WC
Forward current vs. Ambient temperature
50
Forward current IF(mA)
Radiant Intensity vs. Forward current
1.5
40 30 20 10 0
Relative intensity
1
0.5
0
0 20 40 60 80 100
0
5
10
15
20
25
30
(IF) 35
Ambient temperature Ta
Forward current IF
Relative radiant intensity vs. Ambient temperature
Relative radiant intensity PO
Relative intensity vs. Wavelength
1.2
10
1 Intensity [arb.]
0 20 40 60 80 100 ()
0.8 0.6 0.4 0.2
1
0.1
-20
0 350
450
550
650
750
Ambient temperature Ta
Wave Length[nm]
Forward current vs. Forward voltage
() 30
Radiant Pattern
Angle(deg)
Forward current IF
+6 0
25 20 15 10
+
40
+20
0
-20
-4
0
-6 0
50
-80 -100
5
+ 80
+1 00
0
100
0
0
(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5
50
50
100
Forward voltage VF
Relative intensity(%)
2/2

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