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| TGL41-6.8 thru TGL41-200A Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * Plastic MELF package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional polarity only * 400 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % (200 W above 91 V) * Excellent clamping capability * Very fast response time * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial and telecommunication. MECHANICAL DATA Case: DO-213AB (GL41) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Blue band denotes the cathode which is positive with respect to the anode under normal TVS operation DO-213AB (GL41) PRIMARY CHARACTERISTICS VBR PPPM PD IFSM TJ max. 6.8 V to 200 V 400 W, 200 W 1.0 W 40 A 150 C MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 s waveform Power dissipation on infinite heatsink at TL = 75 C Peak pulse current with a 10/1000 s waveform (1) (Fig. 3) Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2) Maximum instantaneous forward voltage at 25 A for uni-directional only Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 C per Fig. 2. Rating is 200 W above 91 V (2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum (1) SYMBO (Fig. 1) PPPM PD IPPM IFSM VF TJ, TSTG VALUE 400 1.0 See next table 40 3.5 - 55 to + 150 UNIT W W A A V C Document Number: 88403 Revision: 20-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 TGL41-6.8 thru TGL41-200A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (V) (1) MIN. TGL41-6.8 TGL41-6.8A TGL41-7.5 TGL41-7.5A TGL41-8.2 TGL41-8.2A TGL41-9.1 TGL41-9.1A TGL41 -10 TGL41 -10A TGL41 -11 TGL41 -11A TGL41-12 TGL41-12A TGL41-13 TGL41-13A TGL41-15 TGL41-15A TGL41-16 TGL41-16A TGL41-18 TGL41-18A TGL41-20 TGL41-20A TGL41-22 TGL41-22A TGL41-24 TGL41-24A TGL41-27 TGL41-27A TGL41-30 TGL41-30A TGL41-33 TGL41-33A TGL41-36 TGL41-36A TGL41-39 TGL41-39A TGL41-43 TGL41-43A TGL41-47 TGL41-47A TGL41-51 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45.9 MAX. 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 56.1 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 TEST CURRENT AT IT (mA) STANDOFF VOLTAGE VWM (V) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 41.3 MAXIMUM REVERSE LEAKAGE AT VWM ID (A) 1000 1000 500 500 200 200 50.0 50.0 10.0 10.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 MAXIMUM PEAK PULSE CURRENT IPPM (A) (2) 37.0 38.1 34.2 35.4 32.0 33.1 29.0 29.9 26.7 27.6 24.7 25.6 23.1 24.0 21.1 22.0 18.2 18.9 17.0 17.8 15.1 15.9 13.7 14.4 12.5 13.1 11.5 12.0 10.2 10.7 9.2 9.7 8.4 8.8 7.7 8.0 7.1 7.4 6.5 6.7 5.9 6.2 5.4 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/C) 0.060 0.060 0.064 0.064 0.068 0.068 0.071 0.071 0.076 0.076 0.078 0.078 0.081 0.081 0.084 0.084 0.087 0.087 0.089 0.089 0.091 0.091 0.093 0.093 0.095 0.095 0.097 0.097 0.099 0.099 0.100 0.100 0.101 0.101 0.102 0.102 0.103 0.103 0.104 0.104 0.104 0.104 0.105 www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88403 Revision: 20-Oct-08 TGL41-6.8 thru TGL41-200A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (V) MIN. TGL41-51A TGL41-56 TGL41-56A TGL41-62 TGL41-62A TGL41-68 TGL41-68A TGL41-75 TGL41-75A TGL41-82 TGL41-82A TGL41-91 TGL41-91A TGL41-100 TGL41-100A TGL41-110 TGL41-110A TGL41-120 TGL41-120A TGL41-130 TGL41-130A TGL41-150 TGL41-150A TGL41-160 TGL41-160A TGL41-170 TGL41-170A TGL41-180 TGL41-180A TGL41-200 TGL41-200A Notes: (1) Pulse test: tp 50 ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105 108 114 117 124 135 143 144 152 153 162 162 171 180 190 (1) TEST CURRENT AT IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAX. 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 86.1 100 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 STANDOFF VOLTAGE VWM (V) 43.6 45.4 47.8 50.2 53.0 55.1 58.1 60.7 64.1 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102 105 111 121 128 130 136 138 145 146 154 162 171 MAXIMUM REVERSE LEAKAGE AT VWM ID (A) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 MAXIMUM PEAK PULSE CURRENT IPPM (A) (2) 5.7 5.0 5.2 4.5 4.7 4.1 4.3 3.7 3.9 3.4 3.5 3.1 3.2 1.39 1.46 1.27 1.32 1.16 1.21 1.07 1.12 0.93 0.97 0.87 0.91 0.82 0.85 0.78 0.81 0.70 0.73 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 70.1 80.5 77.0 89.0 85.0 98.0 92.0 108 103 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/C) 0.105 0.106 0.106 0.107 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.109 0.109 0.109 0.109 0.110 0.110 0.110 0.110 0.110 0.110 0.111 0.111 0.111 0.111 0.111 0.111 0.111 0.111 0.111 0.111 ORDERING INFORMATION (Example) PREFERRED P/N TGL41-6.8A-E3/96 TGL41-6.8A-E3/97 UNIT WEIGHT (g) 0.134 0.134 PREFERRED PACKAGE CODE 96 97 BASE QUANTITY 1500 5000 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel Document Number: 88403 Revision: 20-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 TGL41-6.8 thru TGL41-200A Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise specified) 100 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 C 10 000 CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 10 TGL41-6.8 1 TGL91A 1000 Measured at Zero Bias 100 Measured at Stand-Off Voltage VWM TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p TGL41-100 0.1 0.1 s 1.0 s TGL200A 10 s 100 s 1.0 ms 10 ms Uni-Directional 100 1000 10 1 10 td - Pulse Width Figure 1. Peak Pulse Power Rating Curve VBR - Breakdown Voltage (V) Figure 4. Typical Junction Capacitance Peak Pulse Power (PPP) or Current (IPP) Derating in Percentace (%) 100 1.00 75 50 PD - Power Dissipation (W) 0.75 0.50 25 0.25 0 0 25 50 75 100 125 150 175 200 0 0 25 50 75 100 125 150 175 200 TJ - Initial Temerature (C) Figure 2. Pulse Power or Current vs. Initial Junction Temperature TL - Lead Temerature (C) Figure 5. Power Derating Curve 150 50 tr = 10 s Peak Value IPPM IPPM - Peak Pulse Current, % IRSM Peak Forward Surge Current (A) 100 Half Value - IPP IPPM 2 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM TJ = TJ Max. 8.3 ms Single Half Sine-Wave 40 30 20 50 10/1000 s Waveform as defined by R.E.A. 10 td 0 0 1.0 2.0 3.0 4.0 0 1 10 100 t - Time (ms) Figure 3. Pulse Waveform Number of Cycles at 60 Hz Figure 6. Maximum Non-Repetitive Peak Forward Surge Current Uni-Directional Only www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88403 Revision: 20-Oct-08 TGL41-6.8 thru TGL41-200A Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-213AB (GL41) Mounting Pad Layout Solderable Ends 1st Band D2 = D1 + 0 - 0.008 (0.20) 0.138 (3.5) MAX. D2 D1 = 0.105 0.095 (2.67) (2.41) 0.118 (3.0) MIN. 0.022 (0.56) 0.018 (0.46) 0.205 (5.2) 0.185 (4.7) 0.022 (0.56) 0.018 (0.46) 0.049 (1.25) MIN. 0.238 (6.0) REF. 1st Band Denotes Type and Positive End (Cathode) Document Number: 88403 Revision: 20-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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