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1014 - 2
2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
GENERAL DESCRIPTION
The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes Input prematching and utilizes gold metalization and diffused ballasting to provide high reliagility and supreme ruggedness.
CASE OUTLINE 55LT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 9.7 Watts
50 Volts 3.5 Volts 0.5 A - 65 to +150oC +200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg c VSWR1 CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F =1000-1400 MHz Vcb = 28 Volts As Above Pout = 2 Watts MIN
2 0.35 7.5 45 10:1
TYP
MAX
UNITS
Watt Watt dB %
BVces BVebo Icbo hFE Cob jc Rev B, Jan 2009
Collector to Emitter Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance
Ic = 20 mA Ie = 5 mA Vcb = 28 Volts
50 3.5 10 0.5 100 4.5 18
Volts Volts mA
o
Vce = 28 V, Ic = 100 mA Vcb = 25 V, f = 1 MHz
Tc = 25oC
pF C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.

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