 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD -97428 IRFH5020PBF HEXFET(R) Power MOSFET VDS RDS(on) max (@VGS = 10V) 200 55 36 1.9 43 V m: nC Qg (typical) RG (typical) ID : A (@Tc(Bottom) = 25C) PQFN 5X6 mm Applications * Secondary Side Synchronous Rectification * Inverters for DC Motors * DC-DC Brick Applications * Boost Converters Features and Benefits Features Benefits Low RDSon Low Thermal Resistance to PCB ( 0.5C/W) 100% Rg tested Low Profile ( 0.9 mm) Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Easier Manufacturing Compatible with Existing Surface Mount Techniques Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Orderable part number IRFH5020TRPBF IRFH5020TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC(Bottom) = 25C ID @ TC(Bottom) = 100C ID @ TC(Top) = 25C ID @ TC(Top) = 100C IDM PD @TA = 25C PD @ TC(Top) = 25C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 200 20 5.1 4.1 43 27 7.8 4.9 63 3.6 8.3 0.07 -55 to + 150 Units V A g f c W W/C C Linear Derating Factor Operating Junction and Storage Temperature Range f www.irf.com Notes through are on page 8 1 10/7/09 IRFH5020PBF Static @ TJ = 25C (unless otherwise specified) BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 200 --- --- 3.0 --- --- --- --- --- 18 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.02 47 --- -12 --- --- --- --- --- 36 8.6 2.1 11 14 13 13 1.9 9.3 7.7 21 6.0 2290 120 33 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 55 m VGS = 10V, ID = 7.5A 5.0 V VDS = VGS, ID = 150A --- mV/C 20 A VDS = 200V, VGS = 0V 1.0 mA VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V 100 nA -100 VGS = -20V --- S VDS = 50V, ID = 7.5A 54 VDS = 100V --- VGS = 10V --- nC ID = 7.5A --- --- See Fig.17 & 18 --- --- nC VDS = 16V, VGS = 0V e --- --- --- --- --- --- --- --- ns VDD = 100V, VGS = 10V ID = 7.5A RG=1.8 See Fig.15 VGS = 0V VDS = 100V = 1.0MHz pF Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current d Min. --- --- Typ. --- --- Typ. --- --- Max. 320 7.5 Units mJ A Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Max. Units 7.5 A 63 Conditions MOSFET symbol showing the integral reverse G S D --- --- 1.3 V --- 46 69 ns --- 97 150 nC Time is dominated by parasitic Inductance p-n junction diode. TJ = 25C, IS = 7.5A, VGS = 0V TJ = 25C, IF = 7.5A, VDD = 100V di/dt = 500A/s e eA Thermal Resistance RJC (Bottom) RJC (Top) RJA RJA (<10s) Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient f f Parameter g g Typ. --- --- --- --- Max. 0.5 15 35 21 Units C/W 2 www.irf.com IRFH5020PBF 1000 TOP 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 10 BOTTOM VGS 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.8V 4.5V TOP 100 BOTTOM VGS 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.8V 4.5V 1 10 0.1 4.5V 1 0.01 4.5V 60s PULSE WIDTH Tj = 25C 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 0.001 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 2.0 ID = 7.5A VGS = 10V TJ = 150C 1 1.5 TJ = 25C 0.1 1.0 VDS = 50V 60s PULSE WIDTH 0.01 3.0 4.0 5.0 6.0 7.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Fig 4. Normalized On-Resistance Vs. Temperature 16 VGS, Gate-to-Source Voltage (V) ID= 7.5A 12 C, Capacitance (pF) 10000 VDS = 160V VDS = 100V VDS = 40V Ciss 1000 8 Coss 100 4 Crss 10 1 10 100 1000 0 0 10 20 30 40 50 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage www.irf.com 3 IRFH5020PBF 100 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 100 10 TJ = 150C 10 1msec 10msec 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 100sec 1 TJ = 25C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 8 6.0 Fig 8. Maximum Safe Operating Area ID , Drain Current (A) 6 VGS(th) Gate threshold Voltage (V) 5.0 ID = 1.0A ID = 1.0mA ID = 500A ID = 150A 4 4.0 2 3.0 0 25 50 75 100 125 150 2.0 -75 -50 -25 0 25 50 75 100 125 150 TA , Ambient Temperature (C) TJ , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case (Top) Temperature 100 Fig 10. Threshold Voltage Vs. Temperature Thermal Response ( ZthJC ) 10 D = 0.50 0.20 0.10 0.05 0.02 0.01 1 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 10 100 0.001 1E-006 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Top) 4 www.irf.com IRFH5020PBF ( RDS (on), Drain-to -Source On Resistance m) 160 ID = 7.5A EAS, Single Pulse Avalanche Energy (mJ) 1400 1200 1000 800 600 400 200 0 25 50 75 100 125 150 120 ID 1.1A 1.6A BOTTOM 7.5A TOP TJ = 125C 80 TJ = 25C 40 4 8 12 16 20 VGS, Gate-to-Source Voltage (V) Starting TJ , Junction Temperature (C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V tp VDS L DRIVER RG 20V D.U.T IAS tp + V - DD A I AS 0.01 Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms VDS VGS RG V10V GS Pulse Width 1 s Duty Factor 0.1 RD 90% D.U.T. + VDS -VDD 10% VGS td(on) tr td(off) tf Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms www.irf.com 5 IRFH5020PBF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Vds Vgs Id L 0 DUT 1K S VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform 6 www.irf.com IRFH5020PBF PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ("4 or 5 digits") MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFH5020PBF PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F PQFN 5mm x 6mm Yes guidelines ) MS L1 (per JE DE C J-S T D-020D ) Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 11.3mH, RG = 25, IAS = 7.5A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/2009 8 www.irf.com |
Price & Availability of IRFH5020PBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |