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| RZR025P01 Transistors 1.5V Drive Pch MOSFET RZR025P01 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). 4) Low voltage drive (1.5V). Dimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.4 (3) 1.6 2.8 0.85 0.7 0~0.1 0.3~0.6 (1) (2) Application Switching (1) Gate (2) Source (3) Drain 0.95 0.95 1.9 0.16 Each lead has same dimensions Abbreviated symbol : YC Structure Silicon P-channel MOSFET Packaging specifications Package Type RZR025P01 Code Basic ordering unit (pieces) Taping TL 3000 Equivalent circuit (3) (1) 2 1 (2) 1 ESD PROTECTION DIODE 2 BODY DIODE (1) Gate (2) Source (3) Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits -12 10 2.5 10 -0.8 -10 1.0 150 -55 to +150 Unit V V A A A A W C C Total power dissipation Channel temperature Range of Storage temperature 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board Thermal resistance Parameter Channel to ambient When mounted on a ceramic board. Symbol Rth (ch-a) Limits 125 Unit C / W 1/5 RZR025P01 Transistors Electrical characteristics (Ta=25C) Parameter Symbol Min. - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS -12 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -0.3 - Static drain-source on-state - RDS (on) resistance - - Forward transfer admittance Yfs 3.5 Input capacitance - Ciss Output capacitance - Coss Reverse transfer capacitance - Crss td (on) Turn-on delay time - tr Rise time - td (off) Turn-off delay time - tf Fall time - Total gate charge - Qg Gate-source charge - Qgs Gate-drain charge - Qgd Pulsed Typ. - - - - 44 60 81 110 - 1350 130 125 9 35 130 85 13 2.5 2.0 Max. 10 - -1 -1.0 61 84 121 220 - - - - - - - - - - - Unit A V A V m m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=10V, VDS=0V ID= -1mA, VGS=0V VDS= -12V, VGS=0V VDS= -6V, ID= -1mA ID= -2.5A, VGS= -4.5V ID= -1.2A, VGS= -2.5V ID= -1.2A, VGS= -1.8V ID= -0.5A, VGS= -1.5V VDS= -6V, ID= -2.5A VDS= -6V VGS=0V f=1MHz ID= -1.2A VDD -6V VGS= -4.5V RL=5 RG=10 VDD -6V, ID= -2.5A VGS= -4.5V RL 2.4, RG=10 Body diode characteristics(Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -2.5A, VGS=0V 2/5 RZR025P01 Transistors Electrical characteristic curves 10 10 DRAIN CURRENT -ID[A] 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 VGS= -1.2V VGS= -10V VGS= -4.5V VGS= -2.5V DRAIN CURRENT -ID[A] 8 VGS= -1.8V DRAIN CURRENT : -ID [A] Ta=25 Pulsed 10 Ta=25 Pulsed 6 VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -2.5V VGS= -2.0V VGS= -1.6V VDS= -6V Pulsed 1 4 VGS= -1.5V Ta= 125C Ta= 75 Ta= 25 Ta= - 25 0.1 2 VGS= -1.2V 0 0.01 10 0 2 4 6 8 0.0 0.5 1.0 1.5 DRAIN-SOURCE VOLTAGE -VDS[V] Fig.1 Typical Output Characteristics() DRAIN-SOURCE VOLTAGE -VDS[V] Fig.2 Typical Output Characteristics() GATE-SOURCE VOLTAGE : -VGS [V] Fig.3 Typical Transfer Characteristics 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m] 100 . STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m] Ta=25 Pulsed 1000 VGS= -4.5V Pulsed 1000 VGS= -2.5V Pulsed 100 100 Ta=125 Ta=75 Ta=25 Ta= -25 10 0.1 1 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V Ta=125 Ta=75 Ta=25 Ta= -25 10 0.1 1 DRAIN CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() 10 10 0.1 1 DRAIN CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 10 10 DRAIN CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m] VGS= -1.8V Pulsed VGS= -1.5V Pulsed REVERSE DRAIN CURRENT : -Is [A] 1000 1000 10 VGS=0V Pulsed 1 100 100 Ta=125 Ta=75 Ta=25 Ta=-25 0.1 10 0.1 Ta=125 Ta=75 Ta=25 Ta= -25 10 0.1 Ta=125 Ta=75 Ta=25 Ta= -25 1 DRAIN CURRENT : -ID [A] 10 1 DRAIN CURRENT : -ID [A] 10 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() Fig.8 Static Drain-Source On-State Resistance vs. Drain Current() 3/5 RZR025P01 Transistors GATE-SOURCE VOLTAGE : -VGS [V] 200 100 5 4 3 2 1 0 Ta=25 VDD= -6V ID= -2.5A RG=10 Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m] Ta=25 Pulsed VDS= -6V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 150 ID= -2.5A 10 100 ID= -1.2A 1 50 Ta= -25 Ta=25 Ta=75 Ta=125 0 0 5 GATE-SOURCE VOLTAGE : -VGS [V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10 0 0.1 DRAIN CURRENT : -ID [A] 1.0 10.0 0 2 4 6 8 10 12 14 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics Fig.11 Forward Transfer Admittance vs. Drain Current 10000 CAPACITANCE : C [pF] 1000 td(off) SWITCHING TIME : t [ns] tf 1000 Ciss Crss 100 100 Coss Ta=25 f=1MHz VGS=0V 10 td(on) tr 10 0.01 0.1 1 10 1 0.01 0.1 1 DRAIN CURRENT : -ID [A] Ta=25 VDD= -6V VGS=-4.5V RG=10 Pulsed 100 10 DRAIN-SOURCE VOLTAGE : -VDS [V] Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 SwitchingCharacteristics 4/5 RZR025P01 Transistors Measurement circuits Pulse width VGS ID VDS RL D.U.T. RG VDD VGS 10% 50% 10% 50% 90% 10% 90% td(off) toff tf VDS 90% td(on) ton tr Fig.15 Switching Time Test Circuit Fig.16 Switching Time Waveforms VG VGS ID RL VDS VGS Qgs Qg IG (Const.) D.U.T. RG VDD Qgd Charge Fig.17 Gate Charge Test Circuit Fig.18 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0 |
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