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| SKM100GB12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE 20 V VCES 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 C Tc = 80 C Tj = 125 C Tj = 175 C Tc = 25 C Tc = 80 C 1200 155 117 100 300 -20 ... 20 10 -40 ... 175 121 91 100 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C 300 550 -40 ... 175 200 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMITRANS(R) 2 SKM100GB12V Target Data Features * VCE(sat) with positive temperature coefficient * High short circuit capability, self limiting to 6 x Icnom * Fast & soft inverse CAL diodes * Large clearance (10 mm) and creepage distances (20 mm) * Isolated copper baseplate using DBC Technology (Direct Copper Bonding) * UL recognized, file no. E63532 IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 C Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) VCC = 600 V IC = 100 A VGE = 15 V RG on = 1 RG off = 1 di/dton = 3230 A/s di/dtoff = 1330 A/s per IGBT Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C IC = 100 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V VGE=VCE, IC = 4 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 6.01 0.59 0.589 1150 7.5 294 38 10 418 62 8 0.27 Tj = 25 C Tj = 150 C 6 1.75 2.2 0.94 0.88 8.1 13.2 6.5 0.1 2.2 2.65 1.25 1.22 9.5 14.3 7 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Typical Applications* * AC inverter drives * UPS * Electronic welders at fsw up to 20 kHz GB (c) by SEMIKRON Rev. 0 - 23.12.2009 1 SKM100GB12V Characteristics Symbol Conditions Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C rF Tj = 25 C Tj = 150 C IF = 100 A Tj = 150 C di/dtoff = 1600 A/s T = 150 C j VGE = 15 V Tj = 150 C VCC = 600 V per diode min. typ. 2.2 2.1 1.3 0.9 9.0 12.5 54 15.7 5.9 max. 2.5 2.5 1.5 1.1 10.2 13.7 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 100 A VGE = 0 V chip VF0 SEMITRANS(R) 2 IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.48 30 K/W nH m m SKM100GB12V Target Data Features * VCE(sat) with positive temperature coefficient * High short circuit capability, self limiting to 6 x Icnom * Fast & soft inverse CAL diodes * Large clearance (10 mm) and creepage distances (20 mm) * Isolated copper baseplate using DBC Technology (Direct Copper Bonding) * UL recognized, file no. E63532 terminal-chip per module to heat sink M6 TC = 25 C TC = 125 C 3 to terminals M5 2.5 0.65 1 0.04 0.05 5 5 160 K/W Nm Nm Nm g Typical Applications* * AC inverter drives * UPS * Electronic welders at fsw up to 20 kHz GB 2 Rev. 0 - 23.12.2009 (c) by SEMIKRON SKM100GB12V SEMITRANS 2 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. (c) by SEMIKRON Rev. 0 - 23.12.2009 3 |
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