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QSH29
Transistors
Dual digital transistors
QSH29
Features In addition to the standard features of digital transistor, this transisitor has: 1) Low collector saturation voltage, typically VCE (sat) =100mV for IC / IB=100mA / 1mA(Typ.) 2) High current gain, minimum hFE=500mA for VCE=5V, IC=200mA. 3) Built in Zener diode for protection against surges when connected to inductive load. Dimensions (Unit : mm)
TSMT6
Abbreviated symbol : H29
Structure NPN silicon epitaxial planar transistor
Applications Driver
Packaging specifications and hFE
Package Type Packaging type Code Basic ordering unit (pieces) QSH29 TSMT6 Taping TR 3000
Equivalent circuit
(6) (5)
R Di DTr1 Di R DTr2 (1) : Emitter (2) : Base (3) : Collector (4) : Emitter (5) : Base (6) : Collector (DTr1) (DTr1) (DTr2) (DTr2) (DTr2) (DTr1)
(4)
R=10k
(1)
(2)
(3)
Absolute maximum ratings (Ta=25C)
<< DTr1>> << DTr2>>
Parameter Symbol VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage Continuous IC Collector current Pulsed ICP Power dissipation Junction temperature Range of storage temperature PD Tj Tstg Unit Limits V 6010 V 6010 5 V 500 mA 1 1 A 1.25 W/TOTAL 2 0.9 W/1 ELEMENT 2 150 C -55 to +150 C
1 Pw=10ms 1 Pulse 2 Each terminal mounted on a ceramic board
1/3
QSH29
Transistor
Electrical characteristics (Ta=25C)
<< DTr1>> << DTr2>>
Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 50 - 70 V IC=50A BVCBO Collector-base breakdown voltage 50 - 70 V IC=50A BVEBO 5.0 Emitter-base breakdown voltage - - V IE=720A ICBO Collector cut-off current - - 0.5 A VCB=40V IEBO Emitter cut-off current 300 - 580 A VEB=4V 100 300 mV IC=100mA, IB=1mA Collector-emitter saturation voltage VCE (sat) - hFE VCE=5V, IC=200mA DC current gain 500 - - - - R Emitter-base resistance 7 10 13 k
2/3
QSH29
Transistor
Electrical characterristic curves
1 VCE=2V 125C 25C -40C 0.1
500 Ta=25C IB=600uA
10000
COLLECTOR CURRENT : IC (mA)
IB=500uA
VCE=5V
COLLECTOR CURRENT : IC (A)
DC CURRENT GAIN : hFE
400
IB=400uA
1000
300
IB=300uA IB=200uA
100
-40C 25C 125C
200
0.01
10
100
IB=100uA
1 0.001
0.001 0.1
1
10
0 0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (A)
Fig.1 Grounded Emitter Propagation Characteristics
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector Current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Ta=25C
BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V)
10
10
Ic/Ib=100/1
10
Ic/Ib=10/1
Ic/Ib=200/1 Ic/Ib=150/1 Ic/Ib=100/1
1
125C 25C -40C
1
-40C 25C 125C
0.1
0.1
0.01 0.01
0.1
1
0.01 0.01
0.1
1
0.1 0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( )
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( )
Fig.6 Base-emitter Saturation Voltage vs. Collector Current
10
COLLECTOR CURRENT : IC (A)
Ta=25C Pulsed 1 DC (Ta=25C) 0.1 10ms 100ms 0.01 1ms
0.001
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Safe Operating Area
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0

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