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(R) DB3 DB4 SMDB3 DIAC FEATURES s s VBO : 32V and 40V LOW BREAKOVER CURRENT DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorenscent lamp ballasts. A new surface mount version is now available in SOT-23 package, providing reduced space and compatibility with automatic pick and place equipment. DO-35 (DB3 and DB4) 2 3 1 SOT-23 (SMDB3)* Pin 1 and 3 must be shorted together ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol ITRM Parameter Repetitive peak on-state current tp = 20 s F= 120 Hz SMDB3 DB3 / DB4 Tstg Tj Storage temperature range Operating junction temperature range Value 1.00 2.00 - 40 to + 125 C Unit A Note: * SMDB3 indicated as Preliminary spec as product is still in development stage. October 2001 - Ed: 2B 1/5 DB3 DB4 SMDB3 ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise specified) Symbol VBO Parameter Breakover voltage * Test Conditions C = 22nF ** MIN. TYP. MAX. I VBO1 - VBO2 I V VO IBO tr IR IP Breakover voltage symmetry Dynamic breakover voltage * Output voltage * Breakover current * Rise time * Leakage current * Peak current * C = 22nF ** VBO and VF at 10mA see diagram 2 (R=20) C = 22nF ** see diagram 3 VR = 0.5 VBO max see diagram 2 (Gate) MAX. MIN. MIN. MAX. MAX. MAX. MIN. 10 10 10 0.50 1 1 SMDB3 28 32 36 3 5 5 50 2 10 0.30 DB3 28 32 36 DB4 35 40 45 V V V A s A A Unit V * Applicable to both forward and reverse directions. ** Connected in parallel to the device. PRODUCT SELECTOR Part Number SMDB3 DB3 DB4 VBO 28 - 36 28 - 36 35 - 45 Package SOT-23 DO-35 DO-35 ORDERING INFORMATION SM DB 3 Surface Mount Version Diac Series Breakover voltage 3: VBO typ = 32V 4: VBO typ = 40V 2/5 DB3 DB4 SMDB3 OTHER INFORMATION Part Number SMDB3 DB3 DB4 DB3 DB3 (Blue Body Coat) DB4 (Blue Body Coat) Marking Weight 0.01 g 0.15 g 0.15 g Base Quantity 3000 5000 5000 Packing Mode Tape & Reel Tape & Reel Tape & Reel Diagram 1: Voltage - current characteristic curve. Diagram 2: Test circuit. 10 k 500 k D.U.T Rs=0 + IF 10mA 220 V 50 Hz C=0.1F Vo I P T410 R=20 IBO IB 0,5 VBO V VF VBO -V +V Diagram 3: Rise time measurement. lp 90 % - IF 10 % tr 3/5 DB3 DB4 SMDB3 Fig. 1: Relative variation of VBO versus junction temperature (typical values). VBO [Tj] / VBO [Tj=25C] 1.10 1.05 1.00 0.95 0.90 0.85 Tj(C) 0.80 25 50 75 100 125 SMDB3 DB3/DB4 Fig. 2: Repetitive peak pulse current versus pulse duration (maximum values). ITRM(A) 20.0 10.0 DB3/DB4 F=120Hz Tj initial=25C 1.0 SMDB3 tp(s) 0.1 1 10 100 Fig. 3: Time duration while current pulse is higher 50mA versus C and Rs (typical values). tp(s) 40 Tj=25C 35 30 25 20 15 10 5 0 10 20 50 10 0 33 47 68 22 C(nF) 200 500 100 PACKAGE MECHANICAL DATA (in millimeters) DO-35 REF. C A C DIMENSIONS Millimeters Min. Max. 4.50 2.00 OB / Inches Min. 0.120 0.060 1.102 Max. 0.177 0.079 A B OD / OD / 3.05 1.53 28.00 0.458 C D 0.558 0.018 0.022 4/5 DB3 DB4 SMDB3 PACKAGE MECHANICAL DATA (in millimeters) SOT-23 A E REF. Min. DIMENSIONS Millimeters Max. 1.4 0.1 0.51 0.18 3.04 1.05 2.1 1.6 2.75 Inches Min. 0.035 0 0.012 0.003 0.108 0.033 0.067 0.047 0.083 Max. 0.055 0.004 0.02 0.007 0.12 0.041 0.083 0.063 0.108 e B e1 D A A1 B 0.89 0 0.3 0.085 2.75 0.85 1.7 1.2 2.1 S A1 c D e L e1 H E H L c 0.6 typ. 0.35 0.65 0.024 typ. 0.014 0.026 S FOOTPRINT 0.9 0.035 0.9 0.035 1.1 0.043 2.35 0.92 1.9 0.075 1.45 0.037 mm inch 0.9 0.035 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 1.1 0.043 |
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