View IC-MFPQFN24_4931682.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 1/13 FEATURES o 8-fold level shift up to 40 V output voltage o Inputs compatible with TTL and CMOS levels, 40 V voltage proof o Voltage swing configurable to 5 V, 10 V or supply voltage o Short-circuit-proof push-pull current sources for driving FETs slowly o Safe high output state with single errors o Ground and supply voltage monitor o Status output for error and system diagnostics o Temperature range from -40 to 125 C o Protective ESD circuitry APPLICATIONS o Operation of P-FETs from 1.8 V, 2.5 V, 3.3 V or 5 V systems
PACKAGES
QFN24
BLOCK DIAGRAM
iC-MFP
IN1 IN2 IN3 IN4 IN5 IN6 IN7 IN8 NOUT1 NOUT2 NOUT3 NOUT4 NOUT5 NOUT6 NOUT7 NOUT8
EN5 EN10 ENFS NOK
VBR
Supply, Ground and
VB
GNDR GND
Temperature Monitor
Copyright (c) 2007 iC-Haus
http://www.ichaus.com
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 2/13 DESCRIPTION iC-MFP is a monolithically integrated, 8-channel inverting level adjustment device which drives Pchannel FETs. The internal circuit blocks have been designed in such a way that with single errors, such as open pins (VB, VBR, GND, GNDR) or the shortcircuiting of two outputs, iC-MFP's output stages switch to a predefined, safe high state. Externally connected P-channel FET are thus shut down safely in the event of a single error. The inputs of the eight channels consist of a Schmitt trigger with a pull-down current source and are compatible with TTL and CMOS levels and are voltageproof up to 40 V. The eight channels have a currentlimited push-pull output stage and a pull-up resistor at the output. The hi-level at one of the inputs EN5, EN10 or ENFS defines the output lo-level VB - 5 V, VB - 10 V or GND voltage and enables the outputs. The output lo-level is disabled with the lo-level at all inputs EN5, EN10 and ENFS or with the hi-level at more than one input. iC-MFP monitors the supply voltage at VB and VBR pin and the voltages at the two ground pins GND and GNDR. Both power supply pins VB and VBR and both pins GND and GNDR must be connected together externally in order to guarantee the safe high state of the output stages in the event of error. Should the supply voltage at VB undershoot a predefined threshold, the voltage monitor causes the outputs to be actively tied to VB via the highside transistors. If the supply voltage ceases to be applied to VB, the outputs are tied to VBR by pull-up resistors. If the connection between the ground potential and the GND or GNDR pin is disrupted, the highside transistors are activated. Pull-down currents provide the safe lo-level at open inputs IN1. . . 8, EN5, EN10 and ENFS. The pulldown currents have two stages in order to minimize power dissipation with enhanced noise immunity. When two outputs of different logic states are short circuited, the driving capability of the highside driver predominates, keeping the connected P-channel FETs in a safe shutdown state. The status of the device is indicated with the OpenDrain pin NOK and can be used for system diagnostics. Temperature monitoring protects the device from too high power dissipation. The device is protected against destruction by ESD.
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 3/13 PACKAGES QFN24 4 mm x 4 mm to JEDEC PIN CONFIGURATION QFN24 (top view) PIN FUNCTIONS No. Name Function 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 NOUT1 VB VBR EN5 EN10 IN1 IN2 IN3 IN4 IN5 IN6 IN7 IN8 NOK ENFS GNDR GND NOUT8 NOUT7 NOUT6 NOUT5 NOUT4 NOUT3 NOUT2 TP Output channel 1 Supply Voltage Supply Voltage (R) Enable input lo-level = VB-5V Enable input lo-level = VB-10V Input channel 1 Input channel 2 Input channel 3 Input channel 4 Input channel 5 Input channel 6 Input channel 7 Input channel 8 Output inverted status Enable input full scale lo-level = GND Ground (R) Ground Output channel 8 Output channel 7 Output channel 6 Output channel 5 Output channel 4 Output channel 3 Output channel 2 Thermal-Pad
The Thermal Pad is to be connected to a ground plane on the PCB. Connections between GND, GNDR and the ground plane should be conciled to system FMEA aspects.
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 4/13 ABSOLUTE MAXIMUM RATINGS
Beyond these values damage may occur; device operation is not guaranteed. Item No. Symbol Parameter Supply Voltage Voltage at NOUT1...8, NOK Voltage at IN1...8, EN5, EN10, ENFS Voltage at GNDR referenced to GND Voltage at GND referenced to GNDR Voltage at VBR referenced to VB Voltage at VB referenced to VBR Current in NOUT1...8, NOK, IN1...8, EN5, EN10, ENFS Current in VB, VBR Current in GND, GNDR ESD susceptibility at all pins Operating Junction Temperature Storage Temperature Range HBM 100 pF discharged through 1.5 k -40 -55 Conditions Min. -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -10 -10 -80 Max. 40 40 40 0.3 0.3 0.3 0.3 10 80 10 2 140 125 V V V V V V V mA mA mA kV C C Unit
G001 VB, VBR G002 V() G003 V() G004 V(GNDR) G005 V(GND) G006 V(VBR) G007 V(VB) G008 Imx() G009 Imx() G010 Imx() G011 Vd() G012 Tj G013 Ts
THERMAL DATA
Operating Conditions: VB = VBR = 4.5. . . 40 V, GND = GNDR = 0 V Item No. T01 T02 Symbol Ta Rthja Parameter Operating Ambient Temperature Range Thermal Resistance Chip/Ambient SMD assembly, no additional cooling areas. Conditions Min. -40 Typ. Max. 125 75 C K/W Unit
All voltages are referenced to ground unless otherwise stated. All currents into the device pins are positive; all currents out of the device pins are negative.
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 5/13 ELECTRICAL CHARACTERISTICS
Operating Conditions: VB = VBR = 4.5. . . 40 V, GND = GNDR = 0 V, Tj = -40...125 C unless otherwise stated Item No. 001 002 003 Symbol Parameter Conditions Tj C Fig. Min. 4.5 No load, EN5 = lo, EN10 = lo, ENFS = lo No load, EN5 = hi, EN10 = lo, ENFS = lo, IN1. . . 8 = hi, VB = 8. . . 40 V No load, EN5 = lo, EN10 = hi, ENFS = lo, IN1. . . 8 = hi, VB = 13. . . 40 V No load, EN5 = lo, EN10 = lo, ENFS = hi, IN1. . . 8 = hi, VB = 4.5. . . 40 V No load, all NOUTx = lo No load No load I() = 10 mA 42 -2 -7 tbd 60 -0.4 1.2 3.2 Typ. Max. 40 3.6 6.6 V mA mA Unit
Total Device VB I(VB) I(VB) Permissible Supply Voltage Supply Current in VB Supply Current in VB
004
I(VB)
Supply Current in VB
3.2
6.8
mA
005
I(VB)
Supply Current in VB
1.3
6.6
mA
006 007 008 101 102 103
I(VBR) I(GND) I(GNDR) Vc()hi Vc()lo Vs()hi
Supply Current in VBR Current in GND Current in GNDR Clamp Voltage hi
tbd
mA mA mA V V
Current Driver NOUT1...8 Clamp Voltage lo referenced to I() = -10 mA the lower voltage of GND, GNDR Saturation Voltage hi referenced to VB Saturation Voltage lo referenced to GND Vs()hi = VB - V(); I() = -0.5 mA I() = -2 mA ENFS = hi, INx = hi; I() = 0.5 mA I() = 2 mA -5.3 -10.6 80 -5 -10
0.2 0.8 0.2 0.8 -4.7 -9.4 300 600 -10 140 200 2 -10 -1 200 400 3 -3.6 -3 300 600 10 -2
V V V V V V mV A k k mA mA V
104
Vs()lo
105 106 107 108 109 110 111 112 113 114
Vr() Vr() Ri()
Output Voltage regulated, no load Vr() = V() - VB, EN5 = hi, INx = hi, I() = 0 mA Output Voltage regulated, no load Vr() = V() - VB, EN10 = hi, INx = hi, I() = 0 mA Output Resistance EN10 = hi or EN5 = hi, INx = hi, I() = 2 mA I(NOUTX)= -2 A, Vl() = VBR - V(), VB open VBR-V(NOUTx) = 1 V, VB open VBR-V(NOUTX) = 10 V, VB open VBR-V(NOUTX) = 40 V, VB open V() = 0.8 V...VB V() = 0...VB - 0.8 V
Vl(NOUTx) Output Voltage Ipu() Rpu() Rpu() Isc()lo Isc()hi Vsh() Pull-Up Current Pull-Up Resistor at NOUTx referenced to VBR Pull-Up Resistor at NOUTx referenced to VBR Short circuit current lo Short circuit current hi
Output Voltage at short circuit of Vsh() = V() - VB; EN5 = hi At two different input signals hi two outputs and lo Output Voltage at short circuit of Vsh() = V() - VB; EN10 = hi or two outputs ENFS = hi At two different input signals hi and lo Threshold Voltage hi monitoring comparator Threshold Voltage lo monitoring comparator Hysteresis Vt() = Vr() + VB - V() or Vt() = V() Vt() = Vr() + VB - V() or Vt() = V() Vt()hys = Vt()hi - Vt()lo
115
Vsh()
-1.3
V
116 117 118
Vt()hi Vt()lo Vt()hys
2.2 0.8 50 300
V V mV
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 6/13 ELECTRICAL CHARACTERISTICS
Operating Conditions: VB = VBR = 4.5. . . 40 V, GND = GNDR = 0 V, Tj = -40...125 C unless otherwise stated Item No. 201 202 203 204 205 206 207 208 209 301 302 303 304 305 306 401 402 403 404 405 406 407 408 Symbol Parameter Conditions Tj C Fig. Min. 42 -2 1.15 0.8 Vt()hys = Vt()hi - Vt()lo 0.4 V < V() < Vt()hi V() > 1.4 V VB, VBR = 0 V, V() = 0..40 V 5 5 200 75 20 -10 3.8 Decreasing voltage VB VBhys = VBon - VBoff Increasing temperature Decreasing temperature Thys = Toff - Ton Referenced to GNDR Referenced to GNDR Vt()hys = Vt()hi - Vt()lo Referenced to GND Referenced to GND Vt()hys = Vt()hi - Vt()lo I() = 1 mA I() = -1 mA 50 10 0.4 -2 100 2 -0.4 50 5 100 270 3.4 200 145 130 160 147 13 270 180 170 225 45 Typ. Max. 60 -0.4 1.4 1.05 400 350 70 20 10 4.3 4.0 V V V V mV A A pF A V V mV C C C mV mV mV mV mV mV V V Unit
Input IN1...8, EN5, EN10, ENFS Vc()hi Vc()lo Vt()hi Vt()lo Vt()hys Ipd1() Ipd2() Cin() Il() VBon VBoff VBhys Toff Ton Thys Vt()hi Vt()lo Vt()hys Vt()hi Vt()lo Vt()hys Vc()hi Vc()lo Clamp Voltage hi I() = 10 mA Clamp Voltage lo referenced to I() = -10 mA the lower voltage of GND, GNDR Threshold Voltage hi Threshold Voltage lo Input Hysteresis Pull-Down Current 1 Pull-Down Current 2 Input Capacitance Leakage Current Turn-On Threshold VB Turn-Off Threshold VB Hysteresis Turn-Off Temperature Turn-On temperature Hysteresis Threshold Voltage hi GND Monitor Threshold Voltage hi GND Monitor Hysteresis Threshold Voltage hi GNDR Monitor Threshold Voltage lo GNDR Monitor Hysteresis Clamp Voltage GNDR hi referenced to GND Clamp Voltage GNDR lo referenced to GND
Supply and Temperature Monitor
Ground Monitor GND, GNDR
Status Output NOK 501 502 503 504 505 601 602 603 604 605 606 607 608 Vc(NOK)hi Clamp Voltage hi I() = 10 mA 42 -2 -20 60 -0.4 20 0.2 0.8 2 3 10 270 50 5 100 270 50 5 0.4 -2 100 2 -0.4 mV V V V A V V mA mV mV mV mV Vc(NOK)lo Clamp Voltage lo referenced to I() = -10 mA the lower voltage of GND, GNDR Il(NOK) Leakage Current GND < V(NOK) < VB I() = 0.5 mA I() = 2 mA V() = 0.8 V...VB Vs(NOK)lo Saturation Voltage lo referenced to GND Isc(NOK)lo Short circuit current lo Vt(VB)hi Vt(VB)lo Vt(VBR)hi Vt(VBR)lo
Supply Monitor VB, VBR Threshold Voltage hi VB Monitor Referenced to VBR Threshold Voltage lo VB Monitor Referenced to VBR Vt()hys = Vt()hi - Vt()lo Referenced to VB Referenced to VB Vt()hys = Vt()hi - Vt()lo I() = 1 mA, Vc() = V(VBR) - V(VB) I() = -1 mA, Vc() = V(VBR) V(VB) Threshold Voltage hi VBR Monitor Threshold Voltage lo VBR Monitor
Vt(VB)hys Hysteresis
Vt(VBR)hys Hysteresis Vc(VBR)hi Clamp Voltage hi Vc(VBR)lo Clamp Voltage lo
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 7/13 ELECTRICAL CHARACTERISTICS
Operating Conditions: VB = VBR = 4.5. . . 40 V, GND = GNDR = 0 V, Tj = -40...125 C unless otherwise stated Item No. 701 702 703 801 802 803 804 805 806 Symbol Parameter Conditions Tj C Fig. Min. Typ. Max. -60 -320 50 5.5 5.3 100 10.6 10.3 200 1 0.45 160 6.2 6 300 11.7 11.3 600 1.1 mV mV mV V V mV V V mV s Unit
Testmode EN5, EN10, ENFS Vt()hi Vt()lo Vt()hys Vt(VB)hi Vt(VB)lo Vt()hys Vt(VB)hi Vt(VB)lo Vt()hys Threshold Voltage hi disable test EN5 = EN10 = ENFS Threshold Voltage lo enable test EN5 = EN10 = ENFS Hysteresis Threshold Voltage hi enable regulator Threshold Voltage lo disable regulator Hysteresis Threshold Voltage hi enable regulator Threshold Voltage lo disable regulator Hysteresis Vt()hys = Vt()hi - Vt()lo EN5 = hi EN5 = hi Vt()hys = Vt()hi - Vt()lo EN10 = hi EN10 = hi Vt()hys = Vt()hi - Vt()lo ({IN, EN5}lo hi) 10 %NOUT ({IN, EN5}hi lo) 90 %NOUT CLoad() = 100 pF ({IN, EN5}lo hi) 10 %NOUT ({IN, EN5}hi lo) 90 %NOUT CLoad() = 1 nF ({IN, EN5}lo hi) 10 %NOUT ({IN, EN5}hi lo) 90 %NOUT CLoad() = 2 nF ({IN, EN5}lo hi) 10 %NOUT ({IN, EN5}hi lo) 90 %NOUT CLoad() = 5 nF ({IN, EN10}lo hi) 10 %NOUT ({IN, EN10}hi lo) 90 %NOUT CLoad() = 100 pF ({IN, EN10}lo hi) 10 %NOUT ({IN, EN10}hi lo) 90 %NOUT CLoad() = 1 nF ({IN, EN10}lo hi) 10 %NOUT ({IN, EN10}hi lo) 90 %NOUT CLoad() = 2 nF ({IN, EN10}lo hi) 10 %NOUT ({IN, EN10}hi lo) 90 %NOUT CLoad() = 5 nF ({IN, ENFS}lo hi) 10 %NOUT ({IN, ENFS}hi lo) 90 %NOUT CLoad() = 100 pF ({IN, ENFS}lo hi) 10 %NOUT ({IN, ENFS}hi lo) 90 %NOUT CLoad() = 1 nF ({IN, ENFS}lo hi) 10 %NOUT ({IN, ENFS}hi lo) 90 %NOUT CLoad() = 2 nF ({IN, ENFS}lo hi) 10 %NOUT ({IN, ENFS}hi lo) 90 %NOUT CLoad() = 5 nF VB = 24 V, CLoad() = 100 pF VB = 24 V, CLoad() = 1 nF VB = 24 V, CLoad() = 2 nF VB = 24 V, CLoad() = 5 nF
Regulator lo-level
Timing 901 tp(NOUTx) Propagation delay INx, EN5 NOUTx 902 tp(NOUTx) Propagation delay INx, EN5 NOUTx tp(NOUTx) Propagation delay INx, EN5 NOUTx tp(NOUTx) Propagation delay INx, EN5 NOUTx tp(NOUTx) Propagation delay INx, EN10 NOUTx tp(NOUTx) Propagation delay INx, EN10 NOUTx tp(NOUTx) Propagation delay INx, EN10 NOUTx tp(NOUTx) Propagation delay INx, EN10 NOUTx tp(NOUTx) Propagation delay INx, ENFS NOUTx tp(NOUTx) Propagation delay INx, ENFS NOUTx tp(NOUTx) Propagation delay INx, ENFS NOUTx tp(NOUTx) Propagation delay INx, ENFS NOUTx dV()/dt dV()/dt dV()/dt dV()/dt Slew rate Slew rate Slew rate Slew rate
1
1.3
2.4
s
903
1
2.2
3.7
s
904
1
5
8.1
s
905
1
0.7
1.6
s
906
1
2.3
4.1
s
907
1
3.9
7.1
s
908
1
9
16
s
909
1
1.4
3.1
s
910
1
5.2
9.8
s
911
1
9.2
16.7
s
912
1
20
35
s
913 914 915 916
7 2.2 1.2 0.5
18 4.5 2.5 1.2
V/s V/s V/s V/s
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 8/13 ELECTRICAL CHARACTERISTICS: Diagrams
V(INx, EN5, EN10, ENFS)
Vt()hi
Vt()lo 0 t V(NOUTx) VB 90%
10% V()lo t tp(NOUTx) tp(NOUTx)
Figure 1: Propagation delays
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 9/13 DESCRIPTION OF FUNCTIONS Lo-level output configuration The device iC-MFP has three adjustable lo-levels for driving P-channel fets. The configured lo-level is common to all outputs NOUTx and the minimum level is GND potential. The lo-level configuration inputs are used simultaneous for enabling the lo-level at the outputs NOUTx. The hi-level at exactly one input EN5, EN10 or ENFS configure the voltage of lo-level and enable the outputs. If more than one of these inputs have hi-level the outputs remains disabled. The lo-level VB - 5 V (configured with EN5 = hi) and VB - 10 V (configured with EN10 = hi) are internally generated by a voltage reference and regulated. The lo-level GND (configured with ENFS = hi) is an unregulated connection to GND. In this case the voltage swing depends directly from the power supply VB.
I(NOUTx) [mA]
3
165
V(NOUTx)-Vr(NOUTx) -2.5 -2 -1.5 -1 -0.5 0.5 1 1.5 2 2.5 [V]
-3.6
Figure 3: Output characteristic of the regulated push-pull-output at NOUTx Output characteristic of the lowside transistor The lowside output transistors at the eight channels demonstrate a resistive behavior with low voltage V(NOUTx) and behave as a current sink with finite output resistance with higher voltages.
I(NOUTx) [mA]
Output characteristics of the highside transistor The highside output transistors at the eight channels demonstrate a resistive behavior with low voltage (VB - V(NOUTx)) and behave as a current source with finite output resistance with higher voltages.
3
400
I(NOUTx) [mA] VB - V(NOUTx)
V(NOUTx)
1 2 3 4 5 [V]
1
2
3
4
5
[V]
-400
Figure 4: Output characteristic of the lowside transistor at NOUTx Status output NOK The status output NOK is a current limited 40 V proof open-drain output. The output transistor is switched on if the lo-level of the outputs NOUTx are enabled with exactly one pin ENx, the outputs have reached the voltage levels defined by the inputs INx, the power supply voltage is above the power-on threshold, the temperature is below the switch off temperature and all power supply pins are connected.
-3.6
Figure 2: Output characteristic of the highside transistor at NOUTx
Output characteristic of the regulated push-pulloutput at NOUTx The lo-level VB - 5 V and VB - 10 V is generated with a regulatetd push-pull output and demonstrate a resistive behavior with low voltage changes and behave as a current source with finite output resistance with higher voltage changes.
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 10/13 Pull-down currents In order to enhance noise immunity with limited power dissipation at inputs INx, EN5, EN10 und ENFS the pull-down currents at these pins have two stages. With a rise in voltage at input pins INx, EN5, EN10 und ENFS the pull-down current remains high until Vt()hi (Electrical Characteristics No. 203); above this threshold the device switches to a lower pull-down current. If the voltage falls below Vt()lo (Electrical Characteristics No. 204), the device switches back to a higher pull-down current.
Ipd()
V() increasing
Ipd1()
Ipd2()
V() decreasing
Vt()lo
Vt()hi
V()
Figure 5: Pull-down currents at INx, EN5, EN10 and ENFS
DETECTING SINGLE ERRORS If single errors are detected, safety-relevant applications require externally connected switching transistors to be specifically shut down. Single errors can occur when a pin is open (due to a disconnected bonding wire or a bad solder connection, for example) or when two pins are short-circuited. When two output of different logic levels are shortcircuited, the driving capability of the highside driver will predominate, keeping the connected P-channel FETs in a safe shutdown state. With open pins VB, VBR, GND or GNDR iC-MFP switches the output stages to a safe, predefined high state via pull-up resistors and current sources at the outputs, subsequently shutting down any externally connected P-channel FETs. Loss of VBR potential If power supply potential is no longer applied to the VBR-pin, the output stage lowside drivers are shut down and the outputs actively tied to VB via the highside drivers. Loss of GND potential If ground potential is no longer applied to the GND-pin, the output stage lowside drivers are shut down and the outputs actively tied to VB via the highside drivers.
-20 I(NOUTx) [mA] VB - V(NOUTx)
1
2
3
4
5
[V]
-400
-3.6
Figure 6: Output characeristics at NOUTx with loss of VBR, GND or GNDR Loss of VB potential If power supply potential is not longer applied to VB, the output stages are shut down and the outputs tied to VBR via internal pull-up resistors with a typical value of 200 k.
I(NOUTx) [A] VB - V(NOUTx)
1
2
3
4
5
[V]
-200k
Loss of GNDR potential If ground potential is no longer applied to the GNDRpin, the output stage lowside drivers are shut down and the outputs actively tied to VB via the highside drivers.
Figure 7: Output characeristics at NOUTx with loss of VB
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 11/13 APPLICATION NOTES Driving an P-channel MOSFET One typical field of application for iC-MFP is in the operation of P-FETs with microprocessor output signals, as shown in Figure 8.
iC-MFP
IN1 IN2 IN3 IN4 IN5 IN6 IN7 IN8 NOUT1 NOUT2 NOUT3 NOUT4 NOUT5 NOUT6 NOUT7 NOUT8 RL EN5 EN10 ENFS NOK VB 3.3V
tt0..t1 [s] = Ciss @(Vds = hi) x
Vth (FET) -Isc(NOUTx)lo
(1)
tt1..t2 [s] = Crss @(Vds = hi) x
VB -Isc(NOUTx)lo
(2)
Microcontroller
VD
tt2..t3 [s] = Ciss @(Vds = lo) x
Vr(NOUTx) - Vth (FET) -Isc(NOUTx)lo (3)
VB
VBR
Supply, Ground and
VB
GNDR GND
Temperature Monitor
ton = tt0..t1 + tt1..t2 + tt2..t3 Figure 8: Driving an P-channel MOSFET Slowly switching of a transistor is done with a current limited driver. Figure 9 shows the different phases of a turn on process with resitive load. In Section t0 to t1 the gate of the transistors is loaded to the threshold voltage Vth(FET) and is a dead time. In section t1 to t2 the gate voltage keeps nearly constant (millerplateau) during the drain voltage slope. The slew rate is depending on the current of the driver and the gatedrain capacitor of the transistor. In section t2 to t3 the gate voltage reach the static value. The transistor thus goes low ohmic and minimizes the power dissipation. The equations 1 to 4 are simplified and give an estimation of the timing on the basis of data from the specifications of the device iC-MFP and the used transistor. The turn off looks similar to the turn on but with reverse run trough.
V(NOUTx) VB
(4)
Ciss = Cgs + Cgd = voltage dependent gate-source and gate-drain capacitor [nF] Crss = Cgd = voltage dependent gate-drain capacitor [nF] Isc(NOUTx)lo = short circuit current lo at NOUTx [mA] tt0..t1 = dead time [s] tt1..t2 = slope time at drain (Miller-Plateau) [s] tt2..t3 = time to reach static gate voltage [s] ton = overall turn on time [s] VB = power supply VB [V] Vr(NOUTx) = configured static turn on voltage at NOUTx [V] Vth (FET) = threshold of the transistor [V]
Vth(FET)
Vr()
t
VD VB
GND t0 t1 t2 t3
t
Figure 9: On switching of a transistor
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 12/13 Example Turn on calculation with following estimations: Ciss @(Vds = -24 V ) = 1.5 nF Ciss @(Vds = -1 V ) = 3 nF Crss @(Vds = -24 V ) = 0.3 nF Isc(NOUTx)lo = 4 mA VB = 24 V Vr(NOUTx) = -10 V Vth (FET) = -3 V From this follows: tt0..t1 = 1.13 s tt1..t2 = 1.8 s tt2..t3 = 5.25 s ton = 8.18 s The slew rate at the drain of transistor is: 13.3 V/s
INx
V(NOUTx)
VD
V(NOK) t
Figure 10: Turn on and off one channel with INx
Figure 10 shows the turn on and off at one channel with pin INx. The pulse duration at pin NOK, especially at turn on, can be used for monitoring the connected transistor and the load.
Figure 11: Circuit diagram one channel with monitoring comparator
This specification is for a newly developed product. iC-Haus therefore reserves the right to change or update, without notice, any information contained herein, design and specification; and to discontinue or limit production or distribution of any product versions. Please contact iC-Haus to ascertain the current data. Copying - even as an excerpt - is only permitted with iC-Haus approval in writing and precise reference to source. iC-Haus does not warrant the accuracy, completeness or timeliness of the specification on this site and does not assume liability for any errors or omissions in the materials. The data specified is intended solely for the purpose of product description. No representations or warranties, either express or implied, of merchantability, fitness for a particular purpose or of any other nature are made hereunder with respect to information/specification or the products to which information refers and no guarantee with respect to compliance to the intended use is given. In particular, this also applies to the stated possible applications or areas of applications of the product. iC-Haus conveys no patent, copyright, mask work right or other trade mark right to this product. iC-Haus assumes no liability for any patent and/or other trade mark rights of a third party resulting from processing or handling of the product and/or any other use of the product.
iC-MFP
8-FOLD FAIL-SAFE P-FET DRIVER
Rev A2, Page 13/13 ORDERING INFORMATION
Type iC-MFP
Package QFN24 4 mm
Order Designation iC-MFP QFN24
For technical support, information about prices and terms of delivery please contact: iC-Haus GmbH Am Kuemmerling 18 D-55294 Bodenheim GERMANY Tel.: +49 (61 35) 92 92-0 Fax: +49 (61 35) 92 92-192 Web: http://www.ichaus.com E-Mail: sales@ichaus.com
Appointed local distributors: http://www.ichaus.de/support_distributors.php

▲Up To Search▲

Price & Availability of IC-MFPQFN24

	To Download IC-MFPQFN24 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .