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| Freescale Semiconductor Technical Data Document Number: MRF6522--70 Rev. 9, 10/2008 N--Channel Enhancement--Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 26 volt base station equipment. * Specified Performance @ 940 MHz, 26 Volts Output Power, P1dB -- 80 Watts (Typ) Power Gain @ P1dB -- 16 dB (Typ) Efficiency @ P1dB -- 58% (Typ) * Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 50 Watts CW Output Power * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF6522-70R3 920-960 MHz, 70 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET CASE 465D-05, STYLE 1 NI-600 Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TC TJ Value --0.5, +65 20 7 159 0.9 --65 to +150 150 200 Unit Vdc Vdc Adc W W/C C C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 1.1 Unit C/W NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. (c) Freescale Semiconductor, Inc., 2008. All rights reserved. MRF6522-70R3 1 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor LIFETIME BUY Table 3. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 400 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 3 -- 2 3 4 0.15 3 4 5 0.6 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit LIFETIME BUY Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Input Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Dynamic Characteristics Ciss Coss Crss -- 41 2.4 130 47 3 -- 52 3.4 pF pF pF Functional Tests (In Freescale Test Fixture) Output Power (VDD = 26 Vdc, IDQ = 400 mA, f = 940 MHz) Common--Source Amplifier Power Gain @ P1dB (Min) (VDD = 26 Vdc, IDQ = 400 mA, f = 940 MHz) Drain Efficiency @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = 940 MHz) Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 400 mA, f = 940 MHz) Input Return Loss @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = 940 MHz) P1dB Gps 1 2 IRL 73 14 47 -- -- 80 16 51 58 -- -- 18 -- -- --15 W dB % % dB 1. Value excludes the input matching. MRF6522-70R3 2 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 Vreg VBIAS T1 Gnd Vin Vout R2 R1 C1 R6 VSUPPLY R3 T2 R4 C7 R5 C6 RF Input C5 C8 C3 C12 + C2 C4 C10 C14 C13 RF Output Q1 C9 C11 C1 C2 C3 C4, C6, C14 C5 C7, C8, C13 C9, C10 C11, C12 R1 R2 1.0 F Chip Capacitor (0805) 10 F, 35 Vdc Tantalum Capacitor 100 nF Chip Capacitor 22 pF Chip Capacitors, ACCU--P (0805) 2.7 pF Chip Capacitor, ACCU--P (0805) 4.7 pF Chip Capacitors, ACCU--P (0805) 8.2 pF Chip Capacitors, ACCU--P (0805) 2.2 pF Chip Capacitors, ACCU--P (0805) 10 Chip Resistor (0805) 1.0 k Chip Resistor (0805) R3 R4 R5 R6 T1 T2 1.2 k Chip Resistor (0805) 2.2 k Chip Resistor (0805) 220 Chip Resistor (0805) 5.0 k SMD Potentiometer LP2951 Micro--8 BC847 SOT--23 SUBSTRATE GI180 0.8 mm Figure 1. MRF6522-70 Test Circuit Schematic VBIAS Ground VSUPPLY C1 R2 R3 R4 R1 T1 C2 R6 C3 C4 R5 C7 C6 C10 C12 C13 C9 C11 STRAP MRF6522--70 C14 T2 C5 C8 Q1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF6522-70 Test Circuit Component Layout MRF6522-70R3 RF Device Data Freescale Semiconductor 3 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY TYPICAL CHARACTERISTICS 17.5 IDQ = 600 mA 17.0 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 500 mA 200 mA 16.0 VDS = 26 Vdc f = 921 MHz 15.5 15.0 400 mA 300 mA 18.0 17.8 17.6 17.4 17.2 17.0 16.8 16.6 16.4 16.2 10 Pout, OUTPUT POWER (WATTS) 100 16.0 10 Pout, OUTPUT POWER (WATTS) 100 VDS = 26 Vdc f = 960 MHz 300 mA 200 mA IDQ = 600 mA 500 mA 400 mA 16.5 Figure 3. Power Gain versus Output Power Figure 4. Power Gain versus Output Power 105 115 105 3.0 W 95 85 75 65 55 45 18 19 20 IDQ = 400 mA f = 921 MHz 21 22 23 24 25 26 VDD, SUPPLY VOLTAGE (VOLTS) 27 28 2.0 W 4.0 W Pout , OUTPUT POWER (WATTS) Pin = 5.0 W 95 Pin = 5.0 W 85 3.0 W 75 65 55 45 35 18 19 20 IDQ = 400 mA f = 960 MHz 21 22 23 24 25 26 VDD, SUPPLY VOLTAGE (VOLTS) 27 28 2.0 W 4.0 W Figure 5. Output Power versus Supply Voltage Figure 6. Output Power versus Supply Voltage 80 Pout , OUTPUT POWER (WATTS) 70 60 50 40 30 Pout 20 10 0 0 0.5 VDS = 26 Vdc IDQ = 400 mA f = 921 MHz 1.0 1.5 Pin, INPUT POWER (WATTS) 2.0 80 70 60 50 40 30 20 10 0 , EFFICIENCY (%) Figure 7. Efficiency and Output Power versus Input Power MRF6522-70R3 4 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY Pout , OUTPUT POWER (WATTS) TYPICAL CHARACTERISTICS 80 Pout , OUTPUT POWER (WATTS) 70 60 50 40 30 20 10 0 0 0.5 VDS = 26 Vdc IDQ = 400 mA f = 960 MHz 1.0 1.5 Pin, INPUT POWER (WATTS) 2.0 Pout 80 70 60 50 40 30 20 10 0 , EFFICIENCY (%) LIFETIME BUY Figure 8. Efficiency and Output Power versus Input Power 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 0.02 0.03 0.06 0.12 0.21 0.38 0.70 1.26 2.26 3.96 Pin, INPUT POWER (WATTS) VDS = 26 Vdc f = 921 MHz Gps 70 60 , EFFICIENCY (%) 50 40 30 20 10 0 Figure 9. Power Gain and Efficiency versus Input Power 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 0.02 0.03 0.05 0.10 0.18 0.34 0.62 1.15 2.14 3.70 Pin, INPUT POWER (WATTS) VDS = 26 Vdc f = 960 MHz Gps 70 60 , EFFICIENCY (%) 50 40 30 20 10 0 Figure 10. Power Gain and Efficiency versus Input Power MRF6522-70R3 RF Device Data Freescale Semiconductor 5 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 TYPICAL CHARACTERISTICS --10 IRL, INPUT RETURN LOSS (dB) 18 Gps G ps , GAIN (dB) --15 17 --20 VDS = 26 Vdc IDQ = 400 mA 16 IRL --25 910 920 930 940 950 f, FREQUENCY (MHz) 15 960 970 Figure 11. Performance in Broadband Circuit (at Small Signal) MRF6522-70R3 6 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY Zload 960 MHz Zsource f = 925 MHz Zo = 5 VSUPPLY = 26 Vdc, IBIAS = 400 mA, CW = Room Temperature f MHz 925 940 960 Zsource 2.65 -- j2.53 2.67 -- j2.14 2.85 -- j1.87 Zload 1.62 + j0.2 1.56 + j0.34 1.55 + j0.2 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF6522-70R3 RF Device Data Freescale Semiconductor 7 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 960 MHz f = 925 MHz LIFETIME BUY PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 1.065 1.075 0.380 0.390 0.160 0.205 0.425 0.435 0.060 0.070 0.004 0.006 0.870 BSC 0.096 0.106 0.190 0.223 0.594 0.606 0.591 0.601 0.124 0.130 0.394 0.404 0.395 0.405 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 27.05 27.30 9.65 9.91 4.06 5.21 10.80 11.05 1.52 1.78 0.10 0.15 22.10 BSC 2.44 2.69 4.83 5.66 15.09 15.39 15.01 15.27 3.15 3.30 10.01 10.26 10.03 10.29 0.13 REF 0.25 REF 0.38 REF B (FLANGE) K 2 bbb M D TA M B M M bbb ccc M (INSULATOR) ccc M TA M B R M TA TA M B N B M (LID) M (LID) M M F C S aaa T SEATING PLANE M (INSULATOR) TA M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc H E A A STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465D-05 ISSUE D NI-600 MRF6522-70R3 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 9 Date Oct. 2008 Description * Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 * Added Product Documentation and Revision History, p. 9 MRF6522-70R3 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2008. All rights reserved. MRF6522-70R3 Document Number: MRF6522--70 Rev. 10 9, 10/2008 RF Device Data Freescale Semiconductor |
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