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BB640...
Silicon Variable Capacitance Diode * For VHF TV / VTR tuners * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101
BB640
Type BB640
Package SOD323
Configuration single
LS(nH) 1.8
Marking red S
Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current Operating temperature range Storage temperature
1Pb-containing
Symbol VR VRM IF Top Tstg
Value 30 35 20 -55 ... 150 -55 ... 150
Unit V
mA C
package may be available upon special request
1
2007-04-20
BB640...
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C AC Characteristics Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT
Unit max. nA
typ.
IR 10 200
pF 62 47.5 2.85 2.8 19.5 15 69 54.5 3.28 3.05 16.6 1.15 76 61.5 3.7 3.3 25 2.5 %
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1 /CT28 CT2 /CT25
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching1)
VR = 1 V, VR = 28 V, f = 1 MHz
CT/CT
rS
Series resistance
CT = 12 pF, f = 100 MHz
1For
details please refer to Application Note 047.
2
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BB640...
Diode capacitance CT = (VR)
f = 1MHz
EHD07045
Temperature coefficient of the diode capacitance TCc = (VR)
10 -3
CT
100 pF 90 80 70 60 50 40 30 20 10 0 10 -1
0 1
1/C
TCc
10 -4 10 -5 0 10
10
10
V VR
10
2
10
1
V
10
2
VR
Reverse current IR = (TA)
VR = 28V
300
Reverse current IR = (VR)
TA = Parameter
10 -9
pA
10 -10 200
IR
IR
150
10 -11
85C
25C
100 10 -12 50
0C
0 0
10
20
30
40
50
60
70
80 C
100
10 -13 0
4
8
12
16
20
24
V
30
TA
VR
3
2007-04-20
Package SOD323
BB640...
Package Outline
0.9 +0.2 -0.1
+0.2 1.25 -0.1
0 0.05 A
1.7 +0.2 -0.1
+0.05 0.3 -0.2
2 Cathode marking 1 0.3 +0.1 -0.05 0.25 M A
0.45 0.15 2.5 0.2
0.15 +0.1 -0.06
Foot Print
0.6
Marking Layout (Example)
0.8
1.7
0.8
BAR63-03W Type code Cathode marking Laser marking
Standard Packing
Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel
4
0.2
2 2.9 8
Cathode marking
0.65 1.35
1
4
2007-04-20
BB640...
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
5
2007-04-20

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