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BC807 / BC808
BC807 / BC808 PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung
2.9 0.1 0.4 3 1.30.1 1.1
PNP
310 mW SOT-23 (TO-236) 0.01 g
Version 2007-04-13 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Type Code
1 1.9 2
Dimensions - Mae [mm] 1=B 2=E 3=C
Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Emitter-volt. - Kollektor-Emitter-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Emitter current - Emitter-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur E-B short B open C open - VCES - VCEO - VEBO Ptot - IC - ICM IEM - IBM Tj TS
2.5 max
Grenzwerte (TA = 25C) BC807 50 V 45 V 5V 310 mW 1) 800 mA 1A 1A 200 mA -55...+150C -55...+150C BC808 30 V 25 V
Characteristics (Tj = 25C) DC current gain - Kollektor-Basis-Stromverhaltnis ) - VCE = 1 V, - IC = 100 mA Group -16 Group -25 Group -40 all groups hFE hFE hFE hFE
2 2
Kennwerte (Tj = 25C) Min. 100 160 250 40 - - Typ. - - - - - - Max. 250 400 630 - 0.7 V 1.3 V
- VCE = 1 V, - IC = 500 mA - IC = 500 mA, - IB = 50 mA - IC = 500 mA, - IB = 50 mA
Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. ) - VCEsat
2
Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung ) - VBEsat
1 2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/
(c) Diotec Semiconductor AG
1
BC807 / BC808 Characteristics (Tj = 25C) Min. Base-Emitter-voltage - Basis-Emitter-Spannung 2) - VCE = 1 V, - IC = 500 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 20 V, (E open) - VCB = 20 V, Tj = 125C, (E open) Emitter-Base cutoff current - Emitter-Basis-Reststrom - VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren CCBO RthA - 12 pF < 420 K/W 1) BC817 / BC818 - fT - 100 MHz - - IEB0 - - 100 nA - ICB0 - ICB0 - - - - 100 nA 5 A - VBE - - 1.2 V Kennwerte (Tj = 25C) Typ. Max.
Marking of available current gain groups per type BC807-16 = 5A or 5CR BC808-16 = 5E or 5CR Stempelung der lieferbaren Stromverstarkungsgruppen pro BC807-25 = 5B or 5CS BC808-25 = 5F or 5CS Typ BC807-40 = 5C or 5CT BC808-40 = 5G or 5CT
120 [%] 100
80
60
40
20 Ptot 0 0 TA 50 100 150 [C]
1
Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. )
2 1
Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG
2

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