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| STPS10150C High voltage power Schottky rectifier Main product characteristics IF(AV) VRRM Tj VF(max) 2x5A 150 V 175 C 0.75 V A1 K A2 A2 K A1 TO-220FPAB STPS10150CFP K Features and benefits HIgh junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage current Avalanche capability specified Insulated package - TO-220FPAB Insulating voltage = 2000 V Typical package capacitance 12 pF A2 A1 A1 A2 K D2PAK STPS10150CG TO-220AB STPS10150CT Order Codes Part Number STPS10150CT STPS10150CG STPS10150CG-TR STPS10150CFP Marking STPS10150CT STPS10150CG STPS10150CG STPS10150CFP Description Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Table 1. Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt 1. dPtot --------------dTj Absolute ratings (limiting values) Parameter Repetitive peak reverse voltage RMS forward voltage Average forward current = 0.5 TO-220AB D2PAK TO-220FPAB TC = 155 C TC = 145 C Per diode Per device Value 150 10 5 10 120 3100 -65 to + 175 (1) Unit V A A Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage tp = 10 ms sinusoidal tp = 1 s Tj = 25 C A W C C V/s 175 10000 1 < -------------------------- condition to avoid thermal runaway for a diode on its own heatsink Rth ( j - a ) June 2006 Rev 6 1/9 www.st.com 9 Characteristics STPS10150C 1 Table 2. Symbol Characteristics Thermal resistance Parameter TO-220AB, D2PAK Per diode TO-220FPAB Rth(j-c) Junction to case TO-220AB, D2 PAK Total TO-220FPAB TO-220AB, D2PAK Rth(c) Coupling TO-220FPAB 3.7 5.3 0.7 7 2.4 C/W Value 4 Unit When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-l)(Per diode) + P(diode 2) x Rth(c) Table 3. Symbol IR (1) Static electrical characteristics (per diode) Parameter Reverse leakage current Tests conditions Tj = 25 C Tj = 125 C Tj = 25 C VR = VRRM Min. Typ Max. 2.0 0.40 2.0 0.92 IF = 5 A 0.69 0.75 V 1 IF = 10 A 0.79 0.85 Unit A mA VF (2) Forward voltage drop Tj = 125 C Tj = 25 C Tj = 125 C 1. tp = 5 ms, < 2% 2. tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.02 IF2(RMS) Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature ( = 0.5, per diode) PF(av)(W) 5.0 = 0.2 = 0.5 = 0.1 4.5 4.0 = 0.05 3.5 =1 3.0 2.5 2.0 1.5 T 1.0 0.5 IF(av) (A) tp =tp/T 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.0 5.0 4.0 3.0 IF(av)(A) Rth(j-a)=Rth(j-c) TO-220FPAB TO-220AB/DPAK Rth(j-a)=15 C/W 2.0 T 1.0 d=tp/T tp Tamb(C) 50 75 100 125 150 175 0.0 0 25 2/9 STPS10150C Characteristics Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature 1 PARM (t p ) PARM (1s) 1.2 1 PARM (t p ) PARM (25C) 0.1 0.8 0.6 0.01 0.4 0.2 Tj (C) 0.001 0.01 t p (s) 0 0.1 1 10 100 1000 25 50 75 100 125 150 Figure 5. Non repetitive surge peak forward current versus overload duration - maximum values, per diode (TO-220AB, D2PAK) Figure 6. Non repetitive surge peak forward current versus overload duration - maximum values, per diode (TO-220FPAB) IM(A) 80 70 60 50 40 30 20 10 0 1E-3 IM t 70 60 50 Tc=50C IM(A) 40 30 20 10 IM t TC=50 C Tc=75C TC=75 C TC=125 C Tc=125C =0.5 t(s) 1E-2 1E-1 1E+0 0 1.E-3 d=0.5 t(s) 1.E-2 1.E-1 1.E+0 Figure 7. Relative variation of thermal Figure 8. impedance junction to case versus pulse duration (TO-220AB, D2PAK) 1.0 Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) 1.0 Zth(j-c)/Rth(j-c) Single pulse TO-220AB DPAK Zth(j-c)/Rth(j-c) Single pulse TO-220FPAB 0.1 0.1 1.E-3 tp(s) 1.E-2 1.E-1 1.E+0 0.0 1.E-3 tp(s) 1.E-2 1.E-1 1.E+0 1.E+1 3/9 Characteristics STPS10150C Figure 9. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 10. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) IR(A) 1E+5 1E+4 1E+3 1E+2 1E+1 1E+0 1E-1 1E-2 VR(V) 0 25 50 75 100 125 150 Tj=75C Tj=175C Tj=150C Tj=125C 1000 F=1 MHz VOSC=30 mVRMS Tj=25 C 100 Tj=25C VR(V) 10 1 10 100 1000 Figure 11. Forward voltage drop versus forward current (per diode) Figure 12. Thermal resistance, junction to ambient, versus copper surface under tab - Epoxy printed circuit board, ecu 35 m (D2PAK only) 80 70 60 Rth(j-a) (C/W) DPAK 100 IFM(A) Tj=125 C (Maximum values) 10 Tj=125 C (Typical values) Tj=25 C (Maximum values) 50 40 30 20 1 VFM(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 0 SCU(cm) 0 5 10 15 20 25 30 35 40 Figure 13. Thermal resistance, junction to ambient, versus copper surface under tab - Epoxy printed circuit board, ecu 35 m (TO220FPAB only) 100 90 80 70 60 50 40 30 20 10 0 Rth(j-a) (C/W) TO220FPAB SCU(cm) 0 5 10 15 20 25 30 35 40 4/9 STPS10150C Package information 2 Package information Epoxy meets UL94, V0. Table 4. D2PAK Dimensions Dimensions Ref. Millimeters Min. A E L2 C2 Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 A A1 A2 B D 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R B2 C C2 D E G L L2 L3 M R V2 0.40 typ. 0 8 0.016 typ. 0 8 Figure 14. D2PAK footprint dimensions (in mm) 16.90 10.30 1.30 5.08 3.70 8.90 5/9 Package information Table 5. TO-220AB Dimensions STPS10150C Dimensions Ref. Millimeters Min. A C H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 13 2.65 15.25 6.20 3.50 14 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 6/9 STPS10150C Table 6. TO-220FPAB Dimensions Package information Dimensions Ref. Millimeters Min. A H B Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409 Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4 A B D 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 Dia L6 L2 L3 L5 D F1 L4 F2 L7 E F F1 F2 G G1 H L2 L3 E 16 Typ. 28.6 9.8 2.9 15.9 9.00 3.00 30.6 10.6 3.6 16.4 9.30 3.20 0.63 Typ. 1.126 0.386 0.114 0.626 0.354 0.118 1.205 0.417 0.142 0.646 0.366 0.126 F G1 G L4 L5 L6 L7 Dia. In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information STPS10150C 3 Ordering information Ordering type STPS10150CT STPS10150CG STPS10150CG-TR STPS10150CFP Marking STPS10150CT STPS10150CG STPS10150CG STPS10150CFP Package TO-220AB D PAK D2PAK TO-220FPAB 2 Weight 2.20 g 1.48 g 1.48 g 2.0 g Base qty 50 50 1000 50 Delivery mode Tube Tube Tape and reel Tube 4 Revision history Date Jul-2003 19-Jun-2006 Revision 5B 6 Last update. Reformatted to current standard. Added ECOPACK statement. Added TO220FPAB. Description of Changes 8/9 STPS10150C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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