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| MBRS2H100T3G, MBRA2H100T3G Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 100 VOLTS MARKING DIAGRAMS SMA CASE 403D PLASTIC AYWW A210G G * * * * * * * * * * * * * Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guard-Ring for Overvoltage Protection Low Forward Voltage Drop This is a Pb-Free Device Case: Molded Epoxy Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 70 mg (SMA), 95 mg (SMB) (Approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: Machine Model = C, Human Body Model = 3B Device Meets MSL1 Requirements Mechanical Characteristics SMB CASE 403A PLASTIC AYWW B210G G A210 = MBRA2H100T3G B210 = MBRS2H100T3G A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBRA2H100T3G MBRS2H100T3G Package SMA (Pb-Free) SMB (Pb-Free) Shipping 5000 / Tape & Reel 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 March, 2009 - Rev. 5 1 Publication Order Number: MBRS2H100/D MBRS2H100T3G, MBRA2H100T3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 150C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range Operating Junction Temperature (Note 1) Symbol VRRM VRWM VR IO IFSM Tstg TJ Value 100 Unit V 2.0 130 -65 to +175 -65 to +175 A A C C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Lead (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Thermal Resistance, Junction-to-Ambient (Note 3) MBRA2H100 MBRS2H100 MBRA2H100 MBRS2H100 MBRA2H100 MBRS2H100 Symbol YJCL RqJA RqJA Value 14 12 75 71 275 230 Unit C/W C/W C/W ELECTRICAL CHARACTERISTICS Value Characteristic Maximum Instantaneous Forward Voltage (Note 4) Maximum Instantaneous Reverse Current (Note 4) (iF = 2.0 A) (VR = 100 V) Symbol vF IR TJ = 25C 0.79 0.008 TJ = 125C 0.65 1.5 Unit V mA 2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board. 3. Mounted with minimum recommended pad size 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%. http://onsemi.com 2 MBRS2H100T3G, MBRA2H100T3G TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 150C 10 125C 25C 10 125C 150C 1 25C 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 10 IR, REVERSE CURRENT (mA) 1 0.1 0.01 0.001 0.0001 25C IR, REVERSE CURRENT (mA) 150C 10 Figure 2. Maximum Forward Voltage 150C 1 125C 125C 0.1 0.01 25C 0 10 20 30 40 50 60 70 80 90 100 0.00001 0 10 20 30 40 50 60 70 80 90 100 0.001 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 3 MBRS2H100T3G, MBRA2H100T3G TYPICAL CHARACTERISTICS 450 TJ = 25C f = 1 MHz IF(AV), AVERAGE FORWARD CURRENT (A) 400 C, CAPACITANCE (pF) 350 300 250 200 150 100 50 0 0 10 20 30 40 50 60 70 80 90 4.0 dc 3.0 Square Wave 2.0 RqJL = 14C/W 1.0 100 0 100 110 120 130 140 150 160 170 VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE (C) Figure 5. Typical Capacitance IF(AV), AVERAGE FORWARD CURRENT (A) PFO, AVERAGE POWER DISSIPATION (W) 4.0 dc 3.0 dc 5 Figure 6. Current Derating - Lead RqJA = 71C/W RqJA = 100C/W TJ = 175C 4 Square Wave 3 dc 2 1 0 2.0 Square Wave 1.0 0 0 20 40 60 80 100 120 140 160 175 0 1 2 3 4 5 TA, AMBIENT TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (A) Figure 7. Current Derating, Ambient Figure 8. Maximum Forward Power Dissipation 100 10 R(t) (C/W) 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0% 1.0 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 1.0 10 100 1000 SMB Die X 1.8 mm Die Y 1.8 mm PCB Cu Area 645.2 mm2 PCB Cu thk 1.0 oz Figure 9. Thermal Response, Junction-to-Ambient (1 inch pad) - MBRS2H100 http://onsemi.com 4 MBRS2H100T3G, MBRA2H100T3G TYPICAL CHARACTERISTICS 1000 50% (DUTY CYCLE) 100 R(t) (C/W) 20% 10% 5.0% 2.0% 1.0% 10 1.0 0.1 0.01 SINGLE PULSE 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 SMB Die X 1.8 mm Die Y 1.8 mm PCB Cu Area 11.8 mm2 PCB Cu thk 1.0 oz 1.0 10 100 1000 Figure 10. Thermal Response, Junction-to-Ambient (min pad) - MBRS2H100 100 10 R(t) (C/W) 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0% 1.0 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 1.0 10 100 1000 Figure 11. Thermal Response, Junction-to-Ambient (1 inch pad) - MBRA2H100 1000 50% (DUTY CYCLE) 100 R(t) (C/W) 20% 10% 5.0% 2.0% 1.0% 10 1.0 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 1.0 10 100 1000 Figure 12. Thermal Response, Junction-to-Ambient (min pad) - MBRA2H100 http://onsemi.com 5 MBRS2H100T3G, MBRA2H100T3G 2.5 Power Based on TA = 25C POWER DISSIPATION (W) 2.0 1.5 1.0 0.5 0 2.0 oz 1.0 oz 0 100 200 300 400 500 600 700 COPPER AREA (sq mm) Figure 13. PD, Junction-to-Ambient (URS copper area) http://onsemi.com 6 MBRS2H100T3G, MBRA2H100T3G PACKAGE DIMENSIONS SMA CASE 403D-02 ISSUE F HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D-01 OBSOLETE, NEW STANDARD IS 403D-02. DIM A A1 b c D E HE L MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.006 0.064 0.016 0.115 0.180 0.220 0.060 b D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) A A1 L c SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MBRS2H100T3G, MBRA2H100T3G PACKAGE DIMENSIONS SMB CASE 403A-03 ISSUE G HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. DIM A A1 b c D E HE L L1 MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.45 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.096 0.008 0.087 0.012 0.156 0.181 0.220 0.063 b D A L L1 c A1 SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 MBRS2H100/D |
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