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| STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 , 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESHTM Power MOSFET Features Type STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 VDSS (@Tjmax) 800V 800V 800V 800V RDS(on) < 1.8 < 1.8 < 1.8 < 1.8 ID 5.2A 5.2A 5.2A 5.2A 1 2 3 TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram D(2) 1 3 3 12 D2PAK I2PAK Applications Switching application Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products. Table 1. Device summary Marking B7NK80Z B7NK80Z P7NK80Z P7NK80ZFP Package DPAK IPAK TO-220 TO-220FP Tube Packaging Tape e reel G(1) S(3) AM01476v1 Order codes STB7NK80ZT4 STB7NK80Z-1 STP7NK80Z STP7NK80ZFP March 2010 Doc ID 8979 Rev 6 1/17 www.st.com 17 Contents STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Value Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 5.2 3.3 20.8 125 1 4000 4.5 2500 TO-220 D2PAK I2PAK TO-220FP 800 30 5.2 (1) 3.3 (1) Unit V V A A A W W/C V V/ns V C C 20.8(1) 30 0.24 PTOT VESD(G-S) dv/dt (3) VISO Tj Tstg Gate source ESD (HBM-C=100 pF, R=1.5 k) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC= 25 C) Max operating junction temperature Storage temperature -55 to 150 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 5.2 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX. Table 3. Symbol Thermal data Value Parameter TO-220 D2PAK I2PAK TO-220FP 1 62.5 300 4.2 Unit C/W C/W C Rthj-case Thermal resistance junction-case max Rthj-amb Tl Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting TJ = 25 C, ID = IAR, VDD = 50 V) Value 5.2 210 Unit A mJ Doc ID 8979 Rev 6 3/17 Electrical characteristics STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source Breakdown voltage Zero gate voltage Drain Current (VGS = 0) Gate-body leakage Current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID =1 mA, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125 C VGS = 20 V VDS = VGS, ID = 100 A VGS = 10 V, ID = 2.6 A 3 3.75 1.5 Min. 800 1 50 10 4.5 1.8 Typ. Max. Unit V A A A V Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Dynamic Parameter Test conditions Min. Typ. 5 1138 122 25 50 20 12 45 20 40 7 21 12 10 20 56 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC ns ns ns Forward transconductance VDS = 15 V, ID = 2.6 A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Off-voltage rise time Fall time Cross-over time VDS = 25 V, f = 1 MHz, VGS = 0 - VDS =0 , VDS = 0 to 640 V VDD = 400 V, ID = 2.6 A, RG = 4.7 , VGS = 10 V (see Figure 17) VDD = 640 V, ID = 5.2 A, VGS = 10 V (see Figure 18) VDD = 640 V, ID = 5.2 A, RG = 4.7 , VGS = 10 V (see Figure 17) - td(on) tr tr(off) tr Qg Qgs Qgd tr(Voff) tr tc - - - 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Electrical characteristics Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.2 A, VGS = 0 ISD = 5.2 A, di/dt = 100 A/s VDD = 50 V, Tj = 150C (see Figure 22) Test conditions Min. 530 3.31 12.5 Typ. Max. 5.2 20.8 1.6 Unit A A V ns C A - 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Pulse width limited by safe operating area Table 8. Symbol BVGSO Gate-source zener diode Parameter Test conditions Min. 30 Typ. Max. Unit V Gate-source breakdown voltage IGS= 1mA (open drain) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 8979 Rev 6 5/17 Electrical characteristics STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220, D2PAK, I2PAK Figure 3. Thermal impedance for TO-220, D2PAK, I2PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Figure 8. Transconductance Figure 9. Electrical characteristics Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature Doc ID 8979 Rev 6 7/17 Electrical characteristics Figure 14. Source-drain diode forward characteristic STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Figure 15. Normalized BVDSS vs temperature Figure 16. Maximum avalanche energy vs temperature 8/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Test circuits 3 Test circuits Figure 18. Gate charge test circuit VDD 12V 2200 Figure 17. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform V(BR)DSS VD Figure 22. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 8979 Rev 6 9/17 Package mechanical data STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Package mechanical data Table 9. Dim. TO-220FP mechanical data mm Min. Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2.7 10.4 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 Figure 23. TO-220FP drawing L7 E A B D Dia L6 L5 F1 F2 F H G1 G L2 L3 L4 7012510_Rev_K Doc ID 8979 Rev 6 11/17 Package mechanical data STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75 0015988_Rev_S 12/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Package mechanical data IPAK (TO-262) mechanical data mm Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 inch Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 Doc ID 8979 Rev 6 13/17 Package mechanical data STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z D2PAK (TO-263) mechanical data Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 mm Min 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 in c h Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8 0079457_M 14/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type Doc ID 8979 Rev 6 15/17 Revision history STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z 6 Revision history Table 10. Date 09-Sep-2004 16-Aug-2006 09-Oct-2006 28-Mar-2010 Revision history Revision 3 4 5 6 Complete version New template, no content change Corrected order code Corrected Table 1: Device summary Changes 16/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 8979 Rev 6 17/17 |
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