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2SC3076
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications Power Switching Applications
* * * Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) Excellent switching time: tstg = 1.0 s (typ.) Complementary to 2SA1241 Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 2 1 1.0 10 150 -55 to 150 Unit V V V A A W C C
JEDEC JEITA TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC JEITA TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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2SC3076
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 Min 50 70 40 OUTPUT 30 Typ. 80 30 0.1 Max 1.0 1.0 240 0.5 1.2 V V MHz pF Unit A A V
DC current gain
hFE (1) VCE = 2 V, IC = 0.5 A (Note) hFE (2) VCE = 2 V, IB = 1.5 A IC = 1 A, IB = 0.05 A IC = 1 A, IB = 0.05 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time
VCE (sat) VBE (sat) fT Cob ton
20 s 0 IB1 INPUT IB2
IB1 IB2
Switching time
Storage time
tstg
1.0
s
VCC = 30 V 0.1
Fall time
tf
IB1 = -IB2 = 0.05 A, Duty cycle 1%
Note: hFE (1) classification
O: 70 to 140, Y: 120 to 240
Marking
C3076
Part No. (or abbreviation code) Lot No.
Characteristics indicator
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SC3076
VCE - IC
1.2 1.2
VCE - IC
(V)
Common emitter Common emitter 1.0 Tc = 100C
(V)
1.0 IB = 5 mA 10 20
Tc = 25C
VCE
VCE
0.8
0.8
Collector-emitter voltage
0.6
Collector-emitter voltage
IB = 5 mA
10
20
0.6
0.4 30 0.2 40
0.4
30 40
0.2
0 0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0 0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Collector current IC (A)
Collector current IC (A)
VCE - IC
1.2 1000 Common emitter 1.0 IB = 5 mA 0.8 10 20 30 Tc = -55C 500
hFE - IC
Common emitter VCE = 2 V
VCE
(V)
hFE
300 Tc = 100C 25 -55 50 30
Collector-emitter voltage
DC current gain
50
0.6
100
0.4
40
0.2
0 0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
10 0.01
0.03 0.05
0.1
0.3
0.5
1
2
Collector current IC (A)
Collector current IC (A)
VCE (sat) - IC
1 10 Common emitter
VBE (sat) - IC
Common emitter
Collector-emitter saturation voltage VCE (sat) (V)
Base-emitter saturation voltage VBE (sat) (V)
0.5 0.3
IC/IB = 20
5 3
IC/IB = 20
0.1 0.05 0.03
Tc = 100C
1 0.5 0.3
Tc = -55C
25 100
25 -55
0.01 0.01
0.03 0.05
0.1
0.3
0.5
1
2
0.1 0.01
0.03 0.05
0.1
0.3
0.5
1
2
Collector current IC (A)
Collector current IC (A)
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2SC3076
IC - VBE
2.0 12
PC - Ta
PC (W)
Common emitter VCE = 2 V (1) (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 x 50 x 0.8 mm (3) No heat sink
10
IC (A)
1.5
1.0
Collector power dissipation
8
Collector current
6
4
0.5
Tc = 100C 25
-55
(2)
2
(3)
0 0
0.4
0.8
1.2
1.6
0 0
25
50
75
100
125
150
175
Base-emitter voltage
VBE
(V)
Ambient temperature
Ta
(C)
Safe Operating Area
5 3 IC max (pulsed)* IC max (continuous) 1 ms* 10 ms* 100 ms*
1
IC (A)
DC operation Tc = 25C
0.5 0.3
Collector current
0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 0.5 1 3 5 10 VCEO max 30 50 100
Collector-emitter voltage
VCE
(V)
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2SC3076
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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