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1.5V Drive Pch +SBD MOSFET
TT8U1
Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
Features 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5V)
(1)
(2)
(3)
(4)
Abbreviated symbol : U01
Each lead has same dimensions
Applications Switching Inner circuit Packaging specifications
Package Type TT8U1 Code Basic ordering unit (pieces) Taping TR 3000
1
(1) Anode (2) Anode (3) Source (4) Gate (5) Drain (6) Drain (7) Cathode (8) Cathode
(8)
(7)
(6)
(5)
(1)
(2)
(3)
(4)
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board
1 BODY DIODE
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 Tch PD 2
Limits -20 10 2.4 9.6 -0.8 -9.6 150 1.0
Unit V V A A A A C W / ELEMENT
Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation
1 60HZ / 1Cycle 2 Mounted on a ceramic board
Symbol VRM VR IF IFSM 1 Tj PD
2
Limits 30 20 1.0 3.0 150 1.0
Unit V V A A C W / ELEMENT
Parameter Total power dissipation Range of Storage temperature
Mounted on a ceramic board
Symbol PD Tstg
Limits 1.25 -55 to +150
Unit W / TOTAL C
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1/5
2009.06 - Rev.A
TT8U1
Electrical characteristics (Ta=25C)
Parameter Symbol Min. IGSS Gate-source leakage - Drain-source breakdown voltage V(BR) DSS -20 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -0.3 - Static drain-source on-state - RDS (on) resistance - - Yfs 2.4 Forward transfer admittance Ciss - Input capacitance - Coss Output capacitance - Reverse transfer capacitance Crss - Turn-on delay time td (on) - Rise time tr - Turn-off delay time td (off) - Fall time tf - Total gate charge Qg - Gate-source charge Qgs Gate-drain charge - Qgd Typ. - - - - 80 105 150 180 - 850 60 50 9 25 55 45 6.7 1.7 0.6 Max. 100 - -1 -1.0 105 140 225 360 - - - - - - - - - - - Unit nA V A V m m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=10V, VDS=0V ID= -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, ID= -1mA ID= -2.4A, VGS= -4.5V ID= -1.2A, VGS= -2.5V ID= -1.2A, VGS= -1.8V ID= -0.5A, VGS= -1.5V VDS= -10V, ID= -2.4A VDS= -10V VGS=0V f=1MHz VDD -10V VGS= -4.5V ID= -1.2A RL 8.3 RG=10 VDD -10V VGS= -4.5V ID= -2.4A RL 4.2 / RG=10
Data Sheet
Pulsed
Body diode (source-drain) Parameter Symbol Forward voltage
Pulsed
Min. -
Typ. -
Max. -1.2
Unit V
Conditions IS= -2.4A, VGS=0V
VSD
Parameter Forward voltage drop Reverse leakage Symbol VF IR Min. - - Typ. 0.37 - Max. 0.41 500 Unit V A IF= 1.0A VR=20V Conditions
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2/5
2009.06 - Rev.A
TT8U1
Electrical characteristics curves
5 DRAIN CURRENT : -ID [A] Ta=25C Pulsed VGS= -10V VGS= -4.5V DRAIN CURRENT : -ID [A] 5 VGS= -10V 4 VGS= -4.5V 10 VDS= -10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C
Data Sheet
DRAIN CURRENT : -ID [A]
4 VGS= -2.5V VGS= -1.8V
1
3
3
VGS= -2.5V VGS= -1.8V
0.1
2 VGS= -1.5V 1 VGS= -1.4V 0 0 0.2 0.4 0.6 0.8 1
2
0.01 1 VGS= -1.5V VGS= -1.4V 0 2 4 6 Ta=25C Pulsed 8 10
0
0.001 0 0.5 1 1.5 2
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics()
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics()
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
100 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() 10
100
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
Ta=25C Pulsed
1000
VGS= -4.5V Pulsed
1000 Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= -2.5V Pulsed
100
Ta=125C Ta=75C Ta=25C Ta= -25C 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 10
10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() 10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
VGS= -1.8V Pulsed
VGS= -1.5V Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1000
1000
10
VDS= -10V Pulsed
100 Ta=125C Ta=75C Ta=25C Ta= -25C
100 Ta=125C Ta=75C Ta=25C Ta= -25C 10
1
Ta=125C Ta=75C Ta=25C Ta= -25C
10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() 10
0.1
1 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current()
10
0.1 0.1
1 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current
10
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3/5
2009.06 - Rev.A
TT8U1
250 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[m] 10000 Ta=25C Pulsed SWITCHING TIME : t [ns] 1000 tf 100 td (off)
Data Sheet
10 REVERSE DRAIN CURRENT : -Is [A]
VGS=0V Pulsed
200
Ta=25C VDD = -10V VGS= -4.5V R G=10 Pulsed
1 Ta=125C Ta=75C Ta=25C Ta=-25C
150
ID = -2.4A
100 ID = -1.2A
0.1
50
10 tr td(on) 0.1 1 10
0.01 0 0.5 1 1.5
0 0 2 4 6 8 10
1 0.01
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -ID [A] Fig.12 Switching Characteristics
5 GATE-SOURCE VOLTAGE : -VGS [V]
10000
REVERSE CURRENT : IR [mA]
CAPACITANCE : C [pF]
4
Ciss 1000 Coss 100
Ta=25C f=1MHz VGS=0V
100 10 1
pulsed Ta = 125
3
Ta = 75 0.1 Ta = 25 0.01 0.001 0.0001 0 10 20 30 40 REVERSE VOLTAGE : VR [V] Fig.15 Reverse Current vs. Reverse Voltage
2 Ta=25C VDD = -10V ID = -2.4A R G=10 Pulsed 0 2 4 6 8
1
Crss 10 0.01 0.1 1 10 100
0
Ta= - 25
TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage
10000 FORWARD CURRENT : IF[mA]
pulsed
1000
100
Ta = 125 Ta = 75 Ta= 25 Ta= - 25
10
1
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE : VF[V] Fig.16 Forward Current vs. Forward Voltage
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4/5
2009.06 - Rev.A
TT8U1
Measurement circuits
Pulse width
ID VGS RL D.U.T. RG VDD VDS
Data Sheet
VGS
10% 50% 10%
90%
50% 10% 90%
VDS
90% td(on) ton tr td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
ID VGS RL IG(Const.) RG D.U.T. VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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5/5
2009.06 - Rev.A
Notice
Notes
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