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Anti-Parallel APT2X30DQ60J
Parallel APT2x31DQ60J
ISOTOP (R)
SO
2 T-
27
"UL Recognized"
file # E145592
APT2x31DQ60J APT2X30DQ60J
600V 600V
30A 30A
DUAL DIE ISOTOP(R) PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
* Anti-Parallel Diode
-Switchmode Power Supply -Inverters * Free Wheeling Diode -Motor Controllers -Converters * Snubber Diode
PRODUCT FEATURES
* Ultrafast Recovery Times * Soft Recovery Characteristics * Popular SOT-227 Package * Low Forward Voltage * High Blocking Voltage * Low Leakage Current * Avalanche Energy Rated
PRODUCT BENEFITS
* Low Losses * Low Noise Switching * Cooler Operation * Higher Reliability Systems * Increased System Power
Density
* Uninterruptible Power Supply (UPS) * Induction Heating * High Speed Rectifiers MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG Characteristic / Test Conditions Maximum D.C. Reverse Voltage
All Ratings Per Diode: TC = 25C unless otherwise specified.
APT2x31_30DQ60J UNIT
Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range
600
Volts
30 42 320 20 -55 to 175
mJ C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V Microsemi Website - http://www.microsemi.com VR = 600V VR = 600V, TJ = 125C MIN TYP MAX UNIT
1.8 2.0 1.3
2.2
Volts
7-2008 053-4203 Rev E
25 500 36
A pF
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C IF = 30A, diF/dt = -200A/s VR = 400V, TC = 125C IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN -
APT2x31_30DQ60J
TYP MAX UNIT ns nC Amps ns nC Amps ns nC Amps
21 25 35 3 160 480 6 85 920 20
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions RJC VIsolation WT Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Package Weight MIN TYP MAX UNIT C/W Volts
1.21 2500 1.03 29.2 10 1.1
oz
g lb*in N*m
Torque
Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1.40 , THERMAL IMPEDANCE (C/W) 1.20 1.00 0.80 0.60 0.40 0.20 0 0.7 0.5 0.3 0.1 0.05 10
-5
D = 0.9
Note:
PDM
t1 t2
JC
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
Z
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
7-2008
0.320 Dissipated Power (Watts) 0.00278 0.0421 0.242 0.515
TC (C)
0.375 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
053-4203 Rev E
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
120 100 80 60 TJ = 125C 40 20 0 TJ = 175C TJ = 25C TJ = -55C 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 1400 Qrr, REVERSE RECOVERY CHARGE (nC) 1200 1000 800 600 400 200 0
T = 125C J V = 400V
R
180 trr, REVERSE RECOVERY TIME (ns) 160 140 120 100 80 60 40 20 60A
APT2X31_30DQ60J
T = 125C J V = 400V
R
IF, FORWARD CURRENT (A)
30A 15A
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 400V
R
0
60A
60A
20
15 30A
30A
10 15A
15A
5
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 1.0 0.8 0.6 0.4 0.2 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 200 CJ, JUNCTION CAPACITANCE (pF) 180 160 140 120 100 0.0 0 trr Qrr IRRM
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 0 70 60 IF(AV) (A) 50 40 30
Duty cycle = 0.5 T = 175C
J
0
trr Qrr
20 10 75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 25 50
60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1
053-4203 Rev E
7-2008
80
APT2x31_30DQ60J
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT6017LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594)
7-2008
1.95 (.077) 2.14 (.084)
Anti-parallel
APT2X30DQ60J
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
APT2x31DQ60J
Parallel
Anode 2
Cathode 1 Cathode 1
Anode 1
053-4203 Rev E
Dimensions in Millimeters and (Inches)
Cathode 2
Anode 1
Cathode 2
Anode 2
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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