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| SN7002N SIPMOS(R) Small-Signal-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Drain pin 3 Gate pin1 Source pin 2 Product Summary VDS RDS(on) ID 60 5 0.2 PG-SOT-23 V A Type SN7002N SN7002N Package PG-SOT-23 PG-SOT-23 Pb-free Yes Yes Tape and Reel Information L6327: 3000 pcs/reel L6433: 10000 pcs/reel Marking sSN sSN Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value 0.2 0.16 Unit A Pulsed drain current TA=25C ID puls dv/dt VGS Ptot Tj , Tstg 0.8 6 20 0 (<250V) 0.36 -55... +150 55/150/56 W C kV/s V Reverse diode dv/dt IS=0.2A, VDS=48V, di/dt=200A/s, T jmax=150C Gate source voltage ESD Class (JESD22-A114-HBM) Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 2.5 Page 1 2009-14-08 SN7002N Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint RthJA 350 K/W Symbol min. Values typ. max. Unit Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID=250A Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 60 0.8 Values typ. 1.4 max. 1.8 Unit V Gate threshold voltage, V GS = VDS ID=26A Zero gate voltage drain current VDS=60V, VGS =0, Tj=25C VDS=60V, VGS =0, Tj=150C A 3.9 2.5 0.1 5 10 7.5 5 nA Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.17A Drain-source on-state resistance VGS=10V, ID=0.5A Rev. 2.5 Page 2 2009-14-08 SN7002N Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =48V, ID =0.5A, VGS =0 to 10V VDD =48V, ID =0.5A Symbol Conditions min. Values typ. 0.17 34 7.2 2.8 2.4 3.2 5.3 3.6 max. 45 9.6 4.2 3.6 4.8 8 5.4 Unit g fs C iss C oss C rss td(on) tr td(off) tf VDS2*ID*RDS(on)max, ID=0.16A VGS=0, VDS=25V, f=1MHz 0.09 - S pF VDD=30V, VGS=10V, ID=0.5A, RG=6 ns - 0.14 0.42 1 4.5 0.21 0.63 1.5 - nC V(plateau) VDD =48V, ID = 0.5 A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD Reverse recovery time Reverse recovery charge trr Qrr VGS=0, IF = I S VR=30V, IF =lS , diF/dt=100A/s IS TA=25C - 0.83 14.2 5.9 0.2 0.8 1.2 21.3 8.8 A V ns nC Rev. 2.5 Page 3 2009-14-08 SN7002N 1 Power dissipation Ptot = f (TA) 0.38 SN7002N 2 Drain current ID = f (TA) parameter: VGS 10 V 0.22 SN7002N W 0.32 0.28 A 0.18 0.16 Ptot ID 20 40 60 80 100 120 0.24 0.2 0.16 0.14 0.12 0.1 0.08 0.12 0.06 0.08 0.04 0 0 0.04 0.02 C 160 0 0 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C 10 1 SN7002N 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 SN7002N K/W A 10 2 10 0 t = 200.0s p / ID DS =V ZthJA ID 1 ms 10 1 10 -1 R DS ) (on 10 ms 10 0 D = 0.50 0.20 10 -1 0.10 0.05 0.02 10 -2 DC 10 -2 single pulse 0.01 10 -3 10 0 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Rev. 2.5 Page 4 tp 2009-14-08 SN7002N 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS 1 A 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS 7.5 0.75 0.625 10V 7V 6V 5V 4.5V 4.0V 3.7V 3.5V 3.0V 6 5.25 4.5 3.75 3 2.25 3.1V 3.5V 3.7V 4.1V 4.5V 5V 6V 7V 10V 0.5 0.375 0.25 1.5 0.125 0.75 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V RDS(on) ID 5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C 1 A 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 C 0.4 S 0.8 0.3 0.7 gfs V ID 0.6 0.5 0.4 0.3 0.25 0.2 0.15 0.1 0.2 0.1 0 0 0.05 0.8 1.6 2.4 3.2 4 4.8 6 0 0 0.2 0.4 0.6 0.8 A 1.1 VGS Rev. 2.5 Page 5 ID 2009-14-08 SN7002N 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.5 A, VGS = 10 V SN7002N 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =26A 2.2 V 98% 15 12 1.8 RDS(on) VGS(th) 11 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 C 1.6 typ. 1.4 1.2 1 98% 0.8 0.6 typ 0.4 0.2 180 0 -60 -20 20 2% 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C 10 2 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 0 SN7002N A Ciss pF 10 -1 C 10 1 Coss IF 10 -2 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 V 30 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Rev. 2.5 Page 6 VSD 2009-14-08 SN7002N 13 Typ. gate charge VGS = f (QG); parameter: V DS , ID = 0.2 A pulsed, Tj = 25 C 16 V SN7002N SN7002N 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 72 V V(BR)DSS nC 12 68 66 64 62 60 VGS 10 0.2 VDS max 0.5 VDS max 8 0.8 VDS max 6 4 58 56 54 -60 2 0 0 0.4 0.8 1.2 1.6 2 2.8 -20 20 60 100 C 180 QG Tj Rev. 2.5 Page 7 2009-14-08 SN7002N SOT23 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.5 page 8 2009-14-08 SN7002N Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.5 page 9 2009-14-08 |
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