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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts APPLICATION * Video out to drive color CRT * Other high voltage applications. CHT44PT CURRENT 0.3 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) * Low voltage (Max.=300V) . * High saturation current capability. (1) (3) CONSTRUCTION * NPN High Voltage Transistor (2) MARKING * T44 .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1) B C (3) .045 (1.15) .033 (0.85) .019 (0.50) * Small surface mounting type. (SOT-23) * Low current (Max.=500mA). * Suitable for high packing density. E (2) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-5 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - - Tamb 25 C; note 1 - MIN. MAX. 500 400 6 300 300 30 350 +150 150 +150 V V V UNIT mA mA mA mW C C C -55 - -55 RATING CHARACTERISTIC CURVES ( CHT44PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 4 0 0 V IC = 0; VEB = 4 V VCE = 10V; note 1; IC = 1.0 mA IC = 10 mA IC = 50 mA VCEsat VBEsat Ccb fT Note 1. Pulse test: tp 300 s; 0.02. collector-emitter saturation voltage base-emitter saturation voltage collector-base capacitance transition frequency IC = 10 mA; IB = 1 mA IC = 10 mA; IB = 1 mA IE = ie = 0; VCB = 2 0 V ; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz 40 50 45 - - - 50 - 240 - 500 750 7 - mV mV pF MHz - - MIN. MAX. 0.1 0.1 UNIT uA uA RATING CHARACTERISTIC CURVES ( CHT44PT ) Fig.1 DC current gain 1 10 Fig.2 Turn-on switching times 2 10 Fig.3 Turn-off switching times HFE,DC current current gain 140 120 100 80 60 40 20 0 -20 -40 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 10 VCE=10V VCE=150V Ic/IB=10 Ta=25C VBE(OFF)=4V VCE=150V Ic/IB=10 Ta=25C Time( s) Time( s) 1 10 Ts 0 10 0 10 Tf Tf Td 2 10 -1 10 0 10 1 10 2 10 Ic,Collector current(mA) Ic,Collector current(mA) Ic,Collector current(mA) Fig.4 Capacitance 3 10 1.0 Fig.5 ON Voltage 0.5 Fig.6 Collector saturation region Collector-Emitter voltage(V) Ta=25C 0.8 0.4 Capacitance(pF) VBE(sat),Ic/IB=10 Ic=1mA Ic=10mA Ic=50mA voltage(V) 2 10 Cib 0.6 0.3 VBE(ON),VCE=10V 0.4 0.2 1 10 Cob 0.2 VCE(sat),Ic/IB=10 0.1 Ta=25C 0 1 10 2 10 3 10 4 10 5 10 0 10 0 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 10 -1 10 Collector voltage(V) Ic,Collector current(mA) Ib, base current( A) Fig.7 High Frequency current gain Small signal current gain,HFE 2 10 4 10 Fig.8 Safe operating area Valid Duty Cycle<10% 3 10 Ic,Collector current(mA) 1 10 VCE=10V f=10MHz Ta=25C 1ms 1s 5 =2 Tc 0.1ms 2 10 =2 Ta C 5 C 0 10 1 10 -1 10 -1 10 0 10 1 10 2 10 3 10 0 10 MPSA44 0 10 1 10 2 10 3 10 4 10 Ic,Collector current(mA) Collector voltage(V) |
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