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APT80GA60LD40
600V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40 poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode)
(R)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Gate-Emitter Voltage
2
Ratings
600 143 80 240 30 625 240A @ 600V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 47A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 275 3000 100
Unit
V
VGE =VCE , IC = 1mA
A
6 - 2009 052-6342 Rev C
VGS = 30V
nA
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on) tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 47A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 47A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 47A RG = 4.74 TJ = +125C 240 23 27
APT80GA60LD40
Min Typ
6390 580 63 230 40 78 A nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
158 78 840 751 21 31 194 132 1275 1112
ns
J
ns
J
Thermal and Mechanical Characteristics
Symbol
RJC RJC WT Torque
Characteristic
Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight Mounting Torque (TO-264 Package), 4-40 or M3 screw
Min
-
Typ
-
Max
0.2 .67
Unit
C/W g in*lbf
-
6.1
10
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6342 Rev C
6 - 2009
Typical Performance Curves
150
V
GE
APT80GA60LD40
300 275 IC, COLLECTOR CURRENT (A) 250 225 200 175 150 125 100 75 50 25 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 47A C T = 25C
J
= 15V
15V
TJ= 55C
12V 13V
IC, COLLECTOR CURRENT (A)
125 100
TJ= 125C
10V
TJ= 25C 75 50 25 0 TJ= 150C
9V
8V
360 320 IC, COLLECTOR CURRENT (A) 280 240 200 160 120 80 40 0
0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0
16 14 12 10 8 6 4 2 0
VCE = 120V VCE = 300V VCE = 480V
TJ= 25C TJ= 125C 0 2 4 6 TJ= -55C 8 10 12
0
4
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
5
12 15 200 240 GATE CHARGE (nC) FIGURE 4, Gate charge
280
3
IC = 94A IC = 47A
4 IC = 94A IC = 47A 2 IC = 23.5A 1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
3
2
IC = 23.5A
1
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
0
6
50 100 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 150 125 100 75 50 25 0 6 - 2009 25 50 052-6342 Rev C
0
0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A)
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
30 28 26 24 22 20 18 16 td(OFF), TURN-OFF DELAY TIME (ns)
VCE = 400V TJ = 25C, or 125C RG = 4.7 L = 100H
300 250
VGE =15V,TJ=125C
APT80GA60LD40
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
200 150 100 50 0
VCE = 400V RG = 4.7 L = 100H VGE =15V,TJ=25C
0
20
40
60
80
100
0
20
40
60
80
100
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 100 RG = 4.7, L = 100H, VCE = 400V 80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140 120 tr, FALL TIME (ns) 100 80 60 40 20
RG = 4.7, L = 100H, VCE = 400V TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V
tr, RISE TIME (ns)
60
40
20
TJ = 25 or 125C,VGE = 15V
0
0
20
40
60
80
100
0
0
20
40
60
80
100
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R =4.7
G
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3500 3000 2500 2000 1500 1000 500 0
TJ = 25C TJ = 125C
V = 400V CE V = +15V GE R = 4.7
G
3000
TJ = 125C
2000
1000
TJ = 25C
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) 7000 6000
Eoff,94A
V = 400V CE V = +15V GE T = 125C
J
0
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 4000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 10
G
0
20
40
60
80
100
Eon2,94A
Eon2,94A Eoff,94A
3000
5000 4000 3000 2000 1000 0 0
Eoff,47A Eon2,23A Eoff,23A Eon2,47A
2000
Eon2,47A
6 - 2009
1000
Eoff,47A Eon2,23A
052-6342 Rev C
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Eoff,23A
0
Typical Performance Curves
10000 1000 Cies IC, COLLECTOR CURRENT (A) 100
APT80GA60LD40
C, CAPACITANCE (pF)
1000
Coes 100 Cres
10
1
0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
0.1
1
10
100
1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.25 ZJC, THERMAL IMPEDANCE (C/W)
0.20
D = 0.9 0.7 0.5 0.3
Note:
0.15
0.10
PDM
t1 t2
0.05 0.1 0 0.05 10
-5
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
052-6342 Rev C
6 - 2009
APT80GA60LD40
10% Gate Voltage td(on) 90% Collector Current TJ = 125C
APT30DQ60
tr
V CC IC V CE
5%
10%
5% Collector Voltage
A D.U.T.
Switching Energy
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage
Collector Voltage tf 10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
052-6342 Rev C
6 - 2009
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 111C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified.
APT80GA60LD40 40 63 320 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 40A VF Forward Voltage IF = 80A IF = 40A, TJ = 125C
Min
Type
2.0 2.5 1.7
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.40 0.5 0.30
PDM
t1 t2
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 40A, diF/dt = -200A/s VR = 400V, TC = 25C
Min
-
Typ 22 25 35 3 160 480 6 85 920 20
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 40A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 40A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
D = 0.9
0.7
Note:
0.20 0.10 0 10-5
0.3
0.1 0.05 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6342 Rev C
6 - 2009
Dynamic Characteristics
120
TJ = 25C unless otherwise specified
180 trr, REVERSE RECOVERY TIME (ns) 160 140 40A 120 80A
APT80GA60LD40
T = 125C J V = 400V
R
IF, FORWARD CURRENT (A)
100 80 60 TJ = 125C 40 20 0 TJ = 175C TJ = 25C TJ = -55C 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 1400 0
20A 100 80 60 40 20
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 400V
R
0
Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 400V
R
1200 80A 1000 800 600 400 20A 200 0
80A
20
15
40A
10 20A 5
40A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 1.0 IRRM 0.8 0.6 trr 0.4 0.2 0.0 Qrr trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 80 70 60 IF(AV) (A) 50 40 30 20 10
Duty cycle = 0.5 T = 175C
J
0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 200 180 CJ, JUNCTION CAPACITANCE (pF) 160 140 120 100 80 60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
0
25
50
052-6342 Rev C
6 - 2009
Dynamic Characteristics
TJ = 25C unless otherwise specified
Vr
APT80GA60LD40
+18V 0V
diF /dt Adjust
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Collector
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
Gate Collector (Cathode) Emitter (Anode)
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6342 Rev C
6 - 2009
5.45 (.215) BSC 2-Plcs.

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