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DG808BC45
Gate Turn-off Thyristor
DS5914-1.1 January 2009 (LN26575)
FEATURES
Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction in Equipment Size and Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
KEY PARAMETERS ITCM VDRM I(AV) dVD/dt* dIT/dt 3000A 4500V 780A 1000V/s 400A/s
APPLICATIONS
Variable speed AC motor drive inverters (VSDAC) including Traction drives Uninterruptable Power Supplies High Voltage Converters Choppers Welding Induction Heating DC/DC Converters
Outline type code: C (See Package Details for further information)
Fig. 1 Package outline
VOLTAGE RATINGS
Type Number DG808BC45 Repetitive Peak Off-state Voltage VDRM (V) 4500 Repetitive Peak Reverse Voltage VRRM (V) 16 Conditions Tvj = 125 IDM =100mA, C, IRRM = 50mA
CURRENT RATINGS
Symbol ITCM IT(AV) IT(RMS) Parameter Repetitive peak controllable on-state current Mean on-state current RMS on-state current Conditions VD = 66%VDRM, Tj = 125 C, dIGQ/dt = 40A/ s, CS = 4 F THS = 80 Double side cooled. C, Half sine 50Hz THS = 80 Double side cooled. C, Half sine 50Hz Max. 3000 780 1225 Units A A A
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DG808BC45
SEMICONDUCTOR
SURGE RATINGS
Symbol ITSM It diT/dt
2
Parameter Surge (non repetitive) on-state current I t for fusing Critical rate of rise of on-state current
2
Test Conditions 10ms half sine. Tj = 125 C 10ms half sine. Tj = 125 C VD = 3000V, IT = 3000A, Tj = 125 IFG > 40A, C, Rise time > 1.0 s To 66% VDRM; RGK 1.5 , Tj = 125 C -2V, Tj = 125 C
o
Max. 16.0 1.28 400 100 1000 200
Units kA MA s A/ s V/ s V/ s nH
2
dVD/dt
Rate of rise of off-state voltage To 66% VDRM; VRG Peak stray inductance in snubber circuit IT = 3000A, VD = VDRM, Tj = 125 C, dIGQ = 40A/us, CS = 4.0uF
LS
GATE RATINGS
Symbol VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) tOFF(min) Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissible on time Minimum permissible off time Test Conditions This value may exceeded during turn-off Min. 30 50 100 Max. 16 100 20 24 60 Units V A W kW A/ s s s
THERMAL AND MECHANICAL RATINGS
Symbol Parameter Test Conditions Double side cooled DC Anode DC Single side cooled Cathode DC Clamping force 36.0kN With mounting compound On-state (conducting) 0.035 C/W Min. Max. 0.014 0.0233 Units C/W C/W
Rth(j-hs)
Thermal resistance - junction to heatsink surface
Rth(c-hs)
Contact thermal resistance
Per contact
-
0.0036
C/W
Tvj Top/Tstg Fm
Virtual junction temperature Operating junction/storage temperature range Clamping force
-40 -40 28.0
125 125 44.0
C C kN
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DG808BC45
SEMICONDUCTOR
CHARACTERISTICS
Tj =125 C unless stated otherwise
o
Symbol VTM) IDM IRRM VGT IGT IRGM EON td tr EOFF tgs tgf tgq QGQ QGQT IGQM
Parameter On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on Energy Delay time Rise time Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge Peak reverse gate current
Test Conditions At 3000A peak, IG(ON) = 10A d.c. VDRM = 4500V, VRG = 0V VRRM = 16V VD = 24V, IT = 100A, Tj = 25 C VD = 24V, IT = 100A, Tj = 25 C VRGM = 16V, No gate/cathode resistor VD = 3000V IT = 3000A, dIT/dt = 300A/s IFG = 40A, rise time < 1.0s
o o
Min. -
Max. 3.75 100 50 1.2 3.5 10 2860 2.1 4.8 12000 25 2
Units V mA mA V A mA mJ s s mJ s s s C C A
IT = 3000A, VDM = VDRM Snubber Cap Cs = 4.0C diGQ/dt = 40A/us -
27 12000 24000
-
800
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DG808BC45
SEMICONDUCTOR
2 1.8
10
3500
Instantaneous on-state current I T - (A)
9
3000 2500 2000
Gate trigger voltage VGT - (V)
1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 IGT VGT
7 6 5 4 3 2 1 0 75 100 125 150
o
Gate trigger current IGT - (A)
1.6
8
Measured under pulse conditions. IG(ON) = 10A Half sine wave 10ms
Tj=25oC
Tj=125oC
1500 1000 500 0 1 1.5 2 2.5 3 3.5 4
Junction temperature Tj - ( C)
Instantaneous on-state voltage VTM - (V)
Fig.2 Maximum gate trigger voltage/current vs junction temperature
4000 Maximum permissible turn-off current I TCM - (A) 3500 3000 2500 2000 1500 1000 500 0 0 2 4 6 8 Snubber capacitance CS - (uF) Conditions: Tj = 125 oC VDM = VDRM dIGQ = 40A/us
Fig.3 On-state characteristics
Fig.4 Maximum dependence of ITCM on CS
Fig.5 Maximum (limit) transient thermal impedancedouble side cooled
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DG808BC45
SEMICONDUCTOR
40 Peak half sine wave on-state current - (kA) 35 30 25 20 15 10 5 0 0.0001
3500
Conditions: o Tj = 125 C; IFGM = 40A Cs = 4.0uF; Rs = 10 Ohms dIT/dt = 300A/uS dIFG/dt = 40A/uS
3000
VD = 3000V
Turn-on energy loss EON - (mJ)
2500
VD = 2000V 2000
1500 VD = 1000V 1000
500
0
0.001
0.01
0.1
1
0
1000
2000
3000
Pulse duration - (s)
On-state current IT -(A)
Fig.6 Surge (non-repetitive) on-state current vs time
Fig.7 Turn-on energy vs on-state current
4500 4000
3500 3000 2500 2000 1500 1000 500 0 0 20 40
Turn-on energy loss EON - (mJ)
Conditions: Tj = 125oC; IT = 3000A Cs = 4.0uF Rs = 10 Ohms dIT /dt = 300A/uS dIFG/dt = 40A/uS
3500 Conditions: IT = 3000A;Tj = 125oC CS = 4.0uF;RS = 10 Ohms IFGM = 40A;diFG /dt = 40A/us
3000
(mJ)
Turn-on energy loss E
ON -
2500
VD = 3000V
2000 VD = 2000V 1500
V D = 3000V
V D = 2000V V D = 1000V
1000 VD = 1000V 500
0
60
80
100
0
100
200
300
400
Peak forward gate current IFGM - (A)
Rate of rise of on-state current diT/dt - (A/us)
Fig.8 Turn-on energy vs forward gate current
Fig.9 Turn-on energy vs rate of rise of on-state current
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DG808BC45
SEMICONDUCTOR
6
10
Turn-on delay time, td, and rise time, tr - (us)
9 8 7 6 5 4 3 2 delay time 1 0 rise time
Turn-on delay time, td, and rise time, tr - (us)
Conditions: IT = 3000A Tj = 125oC Cs = 4.0uF Rs = 10 Ohms diT/dt = 300A/uS diFG/dt = 40A/uS VD = 3000V
5
rise time Conditions: Tj = 125oC; IFGM = 40A Cs = 4.0uF; Rs = 10 Ohms diT/dt = 300A/uS Vd = 2000V
4
3
2 delay time 1
0 0 500 1000 1500 2000 2500 3000
0
20
40
60
80
On-state current IT - (A)
Peak forward gate current IFGM - (A) Fig.11 Delay and rise time vs peak forward gate current
Fig.10 Delay and rise time vs on-state current
14000
13000
Turn-off energy per pulse EOFF - (mJ)
12000
Turn-off energy per pulse EOFF - (mJ)
10000
Conditions: Tj = 125oC Cs = 4.0uF diGQ/dt = 40A/uS
VDM = 100% VDRM
12000 VDM = 100% VDRM 11000 10000 VDM = 75% VDRM 9000 8000 7000 6000 5000 VDM = 50% VDRM Conditions: Tj = 125oC Cs = 4.0uF IT = 3000A
8000
VDM = 75% VDRM
6000 VDM = 50% VDRM 4000
2000
0 0 1000 2000 3000 4000
20
30
40
50
60
On-state current, IT - (A)
Rate of rise of reverse gate current dIGQ/dt - (A/us)
Fig.12 Turn-off energy vs on-state current
Fig.13 Turn-off energy loss vs rate of rise of reverse gate current
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DG808BC45
SEMICONDUCTOR
14000 CS = 3 uF CS = 2.5 uF 10000 CS = 2 uF CS = 4uF
30 Conditions : Cs = 4 uF dIGQ/dt = 40 A/us Tj = 125 oC
Turn-off energy per pulse EOFF - (mJ)
12000
25
Gate storage time Tgs - (us)
Tj = 25 oC 20
8000
15
6000
4000
2000
Conditions : Tj = 125 oC VDM = VDRM dIGQ/dt = 40 A/us
10
5
0 0 1000 2000 3000 4000
0 0 1000 2000 3000 4000
On-state current IT - (A)
On-state current IT - (A)
Fig.14 Turn-off energy vs on-state current
Fig.15 Gate storage time vs on-state current
40 Conditions: IT = 3000A Cs = 4.0uF
2.5 Conditions: Cs = 4.0uF diGQ/dt = 40A/uS Tj = 125 oC
35
2
Gate storage time t gs - (us)
Gate fall time tgf - (us)
30 Tj = 125 oC 25 Tj = 25 oC 20
1.5
Tj = 25 oC
1
0.5
15 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/us)
0 0 1000 2000 3000 4000
On-state current IT - (A)
Fig.16 Gate storage time vs rate of rise of reverse gate current
Fig.17 Gate fall time vs on-state current
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DG808BC45
SEMICONDUCTOR
2.5 2.4 2.3 2.2 2.1 Conditions: IT = 3000A Cs = 4.0uF
900 Conditions: Cs = 4.0uF diGQ/dt = 40A/uS
Peak reverse gate current IGQM - (A)
800
Gate fall time tgf - (us)
700
2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt (A/us) 60 Tj = 25 oC Tj = 125 oC
600
Tj = 125 oC
500
Tj = 25 oC
400
300
200 0 1000 2000 3000 4000
On-state current IT - (A) Fig.19 Peak reverse gate current vs on-state current
Fig.18 Gate fall time vs rate of rise of reverse gate current
850 825 Conditions: IT = 3000A Cs = 4.0uF Tj = 125oC
14000 Conditions: Cs = 4.0uF diGQ/dt = 40A/uS Tj = 125oC
Peak reverse gate current IGQM - (A)
12000
Turn-off gate charge QGQ - (uC)
800 775 750 725 700 675 650 625 600 20
10000
Tj = 25oC
8000
Tj = 25oC
6000
4000
2000
25
30
35
40
45
50
55
60
65
0 0 1000 2000 3000 4000
Rate of rise of reverse gate current dIGQ/dt - (A/us)
On-state current IT - (A)
Fig.20 Reverse gate current vs rate of rise of reverse gate current
Fig.21 Turn-off gate charge vs on-state current
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DG808BC45
SEMICONDUCTOR
15000 Rate of rise of off-state voltage dv/dt - (V/us) Conditions: IT = 3000A Cs = 4.0uF
1000 900 800 VD = 2250V 700 600 500 400 300 200 100 0 0.1 1 10 100 1000 VD = 3000V Tj = 125oC
14000
Turn-off gate charge Q GQ - (uC)
13000 Tj = 125oC 12000
11000
10000 Tj = 25oC 9000
8000 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/us)
Gate cathode resistance RGK - (Ohms)
Fig.22 Turn-off charge vs rate of rise of reverse gate current
Fig.23 Rate of rise of off-state voltage vs gate cathode resistance
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DG808BC45
SEMICONDUCTOR
Fig.24 General switching waveforms
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DG808BC45
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 1400g Clamping force: 31.5 10% Lead length: 600mm Package outline type code: C
Fig.31 Package outline
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DG808BC45
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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