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| SMD Type PNP Epitaxial Silicon Transistor MJD350 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.2 9.70 -0.2 Load Formed for Surface Mount Application Straight Lead +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC = 25 ) Collector Dissipation (Ta = 25 ) Junction Temperature Storage Temperature TJ TSTG Symbol VCBO VCEO VEBO IC ICP PC Rating -300 -300 -3 -0.5 -0.75 15 1.56 150 -65 to 150 Unit V V V A A A W W Electrical Characteristics Ta = 25 unless otherwise noted Parameter Collector-Emitter Sustaining Voltage * Collector Cut-off Current Emitter Cut-off Current DC Current Gain * *Pulse Test: PW 300is, Duty Cycle 2% Symbol VCEO(sus) ICEO IEBO hFE Testconditons IC = 1mA, IB = 0 VCB = -300V, IE =0 VEB = -3V, IC = 0 VCE = -10V, IC = -50mA 30 Min -300 -0.1 -0.1 240 Typ Max Unit V mA mA 3.80 www.kexin.com.cn 1 |
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