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| N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 125A, RDS(ON) = 3.2m @VGS = 10V. RDS(ON) = 7.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED93A3/CEU93A3 PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 30 Units V V A A W W/ C mJ A C 20 125 500 57 0.46 800 40 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 2.2 50 Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2010.Sep. http://www.cetsemi.com CED93A3/CEU93A3 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 20A VDS = 15V, ID = 16A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6 24 19 128 72 60 12 25 125 1.5 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 10V, ID = 15A VDS = 15V, VGS = 0V, f = 1.0 MHz 50 4100 980 600 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250A VGS = 10V, ID = 30A VGS = 4.5V, ID = 30A 1 2.5 5 3 3.2 7 V m m BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 30 1 10 -10 V A A A Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 1mH, IAS = 40A, VDD = 24V, RG = 25, Starting TJ = 25 C 2 CED93A3/CEU93A3 120 100 80 60 40 20 0 VGS=10,9,8,7V 200 ID, Drain Current (A) ID, Drain Current (A) VGS=4V 160 120 80 40 0 25 C TJ=125 C 0 1.5 3 -55 C 4.5 6 7.5 VGS=3V 0 1 2 3 4 5 6 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 6000 5000 4000 3000 2000 1000 0 Coss Crss 0 5 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=30A VGS=10V RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 10 2 VTH, Normalized Gate-Source Threshold Voltage IS, Source-drain current (A) ID=250A 10 1 10 -25 0 25 50 75 100 125 150 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CED93A3/CEU93A3 VGS, Gate to Source Voltage (V) 5 4 3 2 1 0 VDS=15V ID=16A 10 3 RDS(ON)Limit 100ms 1ms 10ms DC ID, Drain Current (A) 10 2 10 1 0 12 24 36 48 60 10 0 TC=25 C TJ=150 C Single Pulse 10 -1 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area 10 0 10 1 10 2 t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 |
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