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| IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS(R)-T Power-Transistor Features * N-channel - Logic Level - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (lead free) * Ultra low Rds(on) * 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 3.5 100 V m A PG-TO262-3-1 PG-TO220-3-1 Type IPB100N06S3L-04 IPI100N06S3L-04 IPP100N06S3L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0001-02219 SP0001-02211 SP0001-02209 Marking 3PN06L04 3PN06L04 3PN06L04 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 C T C=25 C I D=50 A Value 100 100 400 450 55 16 214 -55 ... +175 55/175/56 mJ V V W C Unit A Rev. 1.0 page 1 2006-03-14 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=150 A V DS=55 V, V GS=0 V, T j=25 C V DS=55 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=5 V, I D=59 A V GS=5 V, I D=59 A, SMD version V GS=10 V, I D=80 A V GS=10 V, I D=80 A, SMD version 55 1.2 1.6 0.01 2.2 1 A V 0.7 62 62 40 K/W Values typ. max. Unit - 1 1 4.9 4.6 3.1 2.8 100 100 6.2 5.9 3.8 3.5 nA m Rev. 1.0 page 2 2006-03-14 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=80 A, T j=25 C V R=27.5 V, I F=I S, di F/dt =100 A/s 0.6 0.9 100 400 1.3 V A Q gs Q gd Qg V plateau V DD=11 V, I D=80 A, V GS=0 to 10 V 71 45 241 3.8 362 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=80 A, R G=2 V GS=0 V, V DS=25 V, f =1 MHz 17270 2165 2070 30 58 82 55 ns pF Values typ. max. Unit Reverse recovery time2) t rr - - - ns Reverse recovery charge2) 1) Q rr - - - nC Current is limited by bondwire; with an R thJC = 0.7 K/W the chip is able to carry 176 A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design. Not subject to production test. See diagrams 12 and 13. Qualified at -5V and +16V. 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-14 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 1 Power dissipation P tot=f(T C); V GS 4 V 2 Drain current I D=f(T C); V GS 4 V 250 120 200 100 80 150 P tot [W] I D [A] 100 50 0 0 50 100 150 200 60 40 20 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 0.5 1 s limited by on-state resistance 100 s 10 s 100 1 ms 10-1 0.1 0.05 Z thJC [K/W] I D [A] 0.01 10 10-2 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2006-03-14 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 300 10 V 6V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C parameter: V GS 12 3.5 V 4V 10 5V 200 8 4.5 V R DS(on) [m] I D [A] 6 4.5 V 5V 100 4V 4 6V 10 V 3.5 V 2 3V 0 0 2 4 6 8 0 0 20 40 60 80 100 120 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 4V parameter: T j 200 -55 C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V 8 150 25 C 6 175 C 100 R DS(on) [m] 1 2 3 4 5 I D [A] 4 50 2 0 0 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2006-03-14 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 3 105 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 2.5 2 Ciss V GS(th) [V] C [pF] 1500A 1.5 150A 104 Coss 1 Crss 0.5 0 -60 -20 20 60 100 140 180 103 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I AV = f(t AV) parameter: T j(start) 1000 102 100 25C I AV [A] I F [A] 100C 175 C 25 C 150C 101 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.0 page 6 2006-03-14 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 13 Typical avalanche energy E AS = f(T j) parameter: I D 1000 900 800 700 25 A 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 66 64 62 60 500 400 300 200 100 0 0 50 A V BR(DSS) [V] 50 100 150 200 E AS [mJ] 600 58 56 54 52 50 48 46 -60 -20 20 60 100 140 180 100 A T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 16 Gate charge waveforms 11 V 44 V V GS Qg 10 8 V GS [V] 6 4 2 Q gs Q gd Q gate 0 0 50 100 150 200 250 300 350 Q gate [nC] Rev. 1.0 page 7 2006-03-14 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 Published by Infineon Technologies AG St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-03-14 |
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