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| 2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 FEATURES: * Low frequency power amplifier * Complement to 2SB834 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 60 7 3 1.5 150 -55-150 Units V V V A W ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition Frequency Collector output capacitance Turn on time Storage time Fall time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE (sat) VBE fT Cob ton ts tf IB1=-IB2=0.2A, IC=2A VCC=30V, PW=20s Test conditions MIN 60 60 7 100 100 60 300 1 1 3 70 0.8 1.5 0.8 V V MHz pF s s s TYP MAX UNIT V V V A A IC=100A, IE=0 IC=50mA, IB=0 IE= 100A, IC=0 VCB=60V, IE=0 VEB=7V, IC=0 VCE=5V, IC=500mA IC=3A, IB=300mA IC=0.5A, VCE= 5V VCE=5 V, IC=500mA VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE Rank Range O 60-120 Y 100-200 GR 150-300 WEITRON http://www.weitron.com.tw 1/3 02-Feb-07 2SD880 WEITRON http://www.weitron.com.tw 2/3 02-Feb-07 2SD880 TO-220 Outline Dimensions unit:mm D O F A C1 TO-220 Dim A A1 B B1 C C1 D E E1 G G1 F H L L1 H E1 E B1 B L L1 A1 G G1 C M in M ax 4.67 4.47 2.82 2.52 0.91 0.71 1.37 1.17 0.53 0.31 1.37 1.17 10.31 10.01 8.90 8.50 12.06 12.446 2.54 TYP 4.98 5.18 2.89 2.59 0.30 0.00 13.4 13.8 3.96 3.56 3.93 3.73 WEI TRON http://www.weitron.com.tw 3/3 02-Feb-07 |
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