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DE275-102N06A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions
Tc = 25C Derate 2.0W/C above 25C Tc = 25C
VDSS ID25 RDS(on)
Maximum Ratings 1000 1000 20 30 8 48 6 20 5 >200 590 300 3.0 0.25 0.50 V V V V A A A mJ V/ns V/ns W W W C/W C/W
SG1 SG2 GATE
= = = =
1000 V 8A 1.5 590 W
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0
PDC
DRAIN
SD1
SD2
Features
* Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * *
cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials
Characteristic Values min. 1000 3.5 5.0 100 50 1 1.5 2.5 4.3 0.50 -55 175 -55 +175 300 2 +175 7 typ. max. V V nA A mA S C/W C C C C g
TJ = 25C unless otherwise specified
VDSS VGS(th) IGSS IDSS RDS(on) gfs RthJHS TJ TJM Tstg TL Weight
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 20 V, ID = 0.5ID25, pulse test
Advantages
* Optimized for RF and high speed
switching at frequencies to 100MHz
* Easy to mount--no insulators needed * High power density
1.6mm (0.063 in) from case for 10 s
DE275-102N06A
RF Power MOSFET
Symbol Test Conditions Characteristic Values min. typ. 0.3 1650
VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz
(TJ = 25C unless otherwise specified) RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr QRM IRM
IF = IS, -di/dt = 100A/s, VR = 100V VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 IG = 3mA VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Back Metal to any Pin
max. pF pF pF pF ns ns ns ns nC nC nC
80 18 21 3 2 4 5 46 8 25 Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 6 48 1.5 200 0.6 4
Test Conditions
VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2%
A A V ns C A
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice.
For detailed device mounting and installation instructions, see the "Device Installation & Mounting Instructions" technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,860,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715
DE275-102N06A
RF Power MOSFET
Fig. 1
24 22 20 18 16 14 12 10 8 6 4 2 0 0 Typical Output Characteristics
Fig. 2
Typical Transfer Characteristics V DS = 60V PW = 4uS
Top
ID, Drain Currnet (A)
Bottom
ID , Drain Current (A)
8-10V 7.5V 7V 6.5V 6V 5.5V 5V
25 20 15 10 5 0
10
20
30
40
50
60
5
6
7
8
9
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to Source Voltage (V)
Fig. 3
Gate-to-Source Voltage vs. Gate Charge V DS = 500 V ID = 4 A 16
Fig. 4
VD S vs. Capacitance
10000
G ate-to-Source Voltage (V)
14 10 8 6 4 2 0 0 20 40 Gate Charge (nC) 60 80
1 0 200 400 600
Ciss
Capacitance (pF)
1000
12
100
Coss Crss
10
800
VDS Voltage (V)
DE275-102N06A
RF Power MOSFET
Fig. 5 Package Drawing
Source
Source
Gate
Drain
Source
Source
DE275-102N06A
RF Power MOSFET
Fig. 6 Class C Test Circuit
250V
13.56MHz Class C RF Test Circuit
1. T1- 2:1 Turns ratio, Ferronics binocular core P/N 12-365-J Primary - 2 turns of 26 AWG, single strand Teflon Wire. Secondary - 1 turn of braid with the primary wire run inside of it. 8. C4 - 60pf - 100pf air variable capacitor 9. L2 - 800nH, 6 turns, 1" id, 12 AWG single strand magnet wire, 0.85" long. 10. C5 - 250pf - 480pf mica compression capacitor, Sprague Goodman GME90901. 11. L3 - 5.4uH, 20 turns, 18 AWG single strand magnet wire, Micrometals core T-106-2, powered iron core. 12. C6A - 0.02uf, 2 x 0.01uf ceramic disc capacitors. 4. C2 - 470pf, ATC capacitor, P/N 471JW. 13. C6B - 0.08uf, 8 x 0.01uf ceramic disc capacitors. 14. FB1 - 3 x 900mu ferrite beads on 18 AWG buss wire.
2. L1 - < 90nH, 5 turns, 0.25" id, 18 AWG single strand magnet wire, 0.55" long.
3. C1 - 3000pf, 3 x 1000pf, ATC capacitors, P/N 102KW.
5. R1 - 3.3 ohm, 3 x 10 ohm Caddock resistors, P/N MP850-10-10.
6. Q1 - DE275-102N06A 7. C3 - 5nf, 5 x .001uf, ceramic disc capacitors
DE275-102N06A
RF Power MOSFET
102N06A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
10 DRAIN
Ld
4
Rd Lg 20 GATE Doff Roff D1crs D2crs
5
Ron Don
6
8
1 M3 Dcos Rds
7
Ls
30 SOURCE
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/DE275-102N06A.html Net List:
*SYM=POWMOSN .SUBCKT 102N06A 10 20 30 * TERMINALS: D G S * 1000 Volt 6 Amp 1.6 Ohm N-Channel Power MOSFET M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 .5 DON 6 2 D1 ROF 5 7 1.0 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 1.9N RD 4 1 1.6 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M) .ENDS
3
2
Doc #9200-0221 Rev 5 (c) 2009 IXYS RF
An
IXYS Company
2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com

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