 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SSF1020 Feathers: Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1020 is a new generation of middle voltage and high current N-Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1020 is assembled in high reliability and qualified assembly house. Application: Power switching application SSF1020 TOP View (TO220) ID =60A BV=100V Rdson=20mmax. Absolute Maximum Ratings Parameter ID@Tc=25 C IDM Continuous drain current,VGS@10V Pulsed drain current Linear derating factor VGS EAS EAR TJ TSTG Gate-to-Source voltage Single pulse avalanche energy Repetitive avalanche energy Operating Junction and Storage Temperature Range Parameter RJC RJA Junction-to-case Junction-to-ambient Min. -- -- ID@Tc=100C Continuous drain current,VGS@10V PD@TC=25C Power dissipation Max. 60 50 240 150 2.0 20 240 TBD -55 to +150 C W W/ C V mJ A Units Thermal Resistance Typ. 0.83 -- Max. -- 62 Units C/W Electrical Characteristics @TJ=25 C(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage 2009.12.13 Min. 100 -- 2.0 -- -- -- Typ. -- 16 3.0 58 -- -- -- Max. Units -- 20 4.0 -- 1 10 100 A nA V m V S Test Conditions VGS=0V,ID=250A VGS=10V,ID=30A VDS=VGS,ID=250A VDS=5V,ID=30A VDS=100V,VGS=0V VDS=100V, VGS=0V,TJ=150C VGS=20V page 1of5 (c)Silikron Semiconductor CO.,LTD Version : 1.0 SSF1020 Gate-to-Source reverse leakage Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance -- -- -- -- -- -- -- -- -- -- -- -- 90 14 24 18.2 15.6 70.5 13.8 3150 300 240 -100 -- -- -- -- -- -- -- -- -- -- pF nS nC VGS=-20V ID=30A VDD=30V VGS=10V VDD=30V ID=2A ,RL=15 RG=2.5 VGS=10V VGS=0V VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Reverse Recovery Time Forward Turn-on Time . . Min. -- -- -- Typ. -- -- -- 57 107 Max. 60 A 240 1.3 -- -- V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25C,IS=30A,VGS=0V TJ=25C,IF=60A di/dt=100A/s VSD Diode Forward Voltage trr ton Notes: Qrr Reverse Recovery Charge Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Repetitive rating; pulse width limited by max junction temperature. Test condition: L =0.3mH, ID = 40A, VDD = 50V Pulse width300S, duty cycle1.5% ; RG = 25 Starting TJ = 25C BVdss EAS test circuit Gate charge test circuit (c)Silikron Semiconductor CO.,LTD 2009.12.13 Version : 1.0 page 2of5 SSF1020 Switch Time Test Circuit Switch Waveforms: Transfer Characteristic Capacitance: On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature (c)Silikron Semiconductor CO.,LTD 2009.12.13 Version : 1.0 page 3of5 SSF1020 Source-Drain Diode Forward Voltage Gate Charge Max Drain Current vs Junction Temperature Safe Operation Area Transient Thermal Impedance Curve (c)Silikron Semiconductor CO.,LTD 2009.12.13 Version : 1.0 page 4of5 SSF1020 TO220 MECHANICAL DATA: (c)Silikron Semiconductor CO.,LTD 2009.12.13 Version : 1.0 page 5of5 |
Price & Availability of SSF1020
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |