 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDY1002PZ Dual P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET FDY1002PZ Dual P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET -20 V, -0.83 A, 0.5 Features Max rDS(on) = 0.5 at VGS = -4.5 V, ID = -0.83 A Max rDS(on) = 0.7 at VGS = -2.5 V, ID = -0.70 A Max rDS(on) = 1.2 at VGS = -1.8 V, ID = -0.43 A Max rDS(on) = 1.8 at VGS = -1.5 V, ID = -0.36 A HBM ESD protection level = 1400 V (Note 3) RoHS Compliant September 2008 General Description This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the rDS(on)@VGS = -1.5 V. Application Li-Ion Battery Pack 6 5 4 S1 1 G1 2 1 2 3 SC89-6 D2 3 6 D1 5 G2 4 S2 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings -20 8 -0.83 -1.0 0.625 0.446 -55 to +150 Units V V A W C Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 200 280 C/W Package Marking and Ordering Information Device Marking G Device FDY1002PZ Package SC89-6 Reel Size 7" Tape Width 8 mm Quantity 3000 units (c)2008 Fairchild Semiconductor Corporation FDY1002PZ Rev.B 1 www.fairchildsemi.com FDY1002PZ Dual P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 A, VGS = 0 V ID = -250 A, referenced to 25 C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V -20 11 -1 10 V mV/C A A On Characteristics (Note 2) VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250 A ID = -250 A, referenced to 25 C VGS = -4.5 V, ID = -0.83 A VGS = -2.5 V, ID = -0.70 A rDS(on) Static Drain to Source On-Resistance VGS = -1.8 V, ID = -0.43 A VGS = -1.5 V, ID = -0.36 A VGS = -4.5 V, ID = -0.83 A, TJ =125 C gFS Forward Transconductance VDD = -5 V, ID = -0.83 A -0.4 -0.7 -3 0.28 0.36 0.47 0.62 0.39 2 0.5 0.7 1.2 1.8 0.85 S -1.0 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 100 23 18 135 35 30 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VDD = -10 V, ID = -0.83 A VGS = -4.5 V VDD = -10 V, ID = -0.83 A VGS = -4.5 V, RGEN = 6 3.5 2.9 23 13 2.2 0.3 0.6 10 10 37 23 3.1 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Rating IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -0.52 A (Note 2) -1.0 18 3.8 -0.52 -1.2 31 10 A V ns nC IF = -0.83 A, dIF/dt = 100 A/s Notes: 1. RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. a) 200 oC/W when mounted on a 1 in2 pad of 2 oz copper. b) 280 oC/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDY1002PZ Rev.B 2 www.fairchildsemi.com FDY1002PZ Dual P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 1.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.5 VGS = -4.5 V VGS = -2.5 V VGS = -1.5 V -ID, DRAIN CURRENT (A) 4.0 3.5 VGS = -1.5 V 0.8 0.6 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX VGS = -1.8 V 3.0 2.5 2.0 VGS = -2.5 V VGS = -2.0V VGS = -2.0 V 0.4 0.2 VGS = -1.8 V 1.5 1.0 0.5 0.0 VGS = -4.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.0 0.0 0.5 1.0 1.5 2.0 0.5 1.0 1.5 2.0 2.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 SOURCE ON-RESISTANCE () 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -75 ID = -0.83 A VGS = -4.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.6 ID = -0.415 A rDS(on), DRAIN TO 1.2 0.8 TJ = 125 oC 0.4 0.0 1.0 TJ = 25 oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 1.0 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 1 VGS = 0 V -ID, DRAIN CURRENT (A) 0.8 VDS = -5 V TJ = 125 oC 0.1 0.6 TJ = 125 oC 0.4 TJ = 25 oC TJ = 25 oC 0.01 TJ = -55 oC 0.2 TJ = -55 oC 0.0 0.5 1.0 1.5 2.0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDY1002PZ Rev.B 3 www.fairchildsemi.com FDY1002PZ Dual P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -0.83 A 500 Ciss CAPACITANCE (pF) 4 3 VDD = -8 V VDD = -10 V VDD = -12 V 100 Coss 2 1 0 0.0 10 f = 1 MHz VGS = 0 V Crss 0.5 1.0 1.5 2.0 2.5 3.0 1 0.1 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 10 20 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 2 10 -Ig, GATE LEAKAGE CURRENT (uA) 5 VGS = 0 V 1 -ID, DRAIN CURRENT (A) 1 ms 10 3 10 ms 10 1 TJ = 125 oC 0.1 THIS AREA IS LIMITED BY rDS(on) 100 ms 1s 10 ms DC 10 -1 SINGLE PULSE TJ = MAX RATED RJA = 280 C/W TA = 25 oC o TJ = 25 oC 10 -3 0 3 6 9 12 15 0.01 0.1 1 10 60 -VGS, GATE TO SOURCE VOLTAGE (V) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage 30 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Forward Bias Safe Operating Area VGS = -4.5 V SINGLE PULSE RJA = 280 C/W TA = 25 C o o 10 1 0.2 -3 10 10 -2 10 -1 10 0 10 1 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation FDY1002PZ Rev.B 4 www.fairchildsemi.com FDY1002PZ Dual P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZJA D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 SINGLE PULSE RJA = 280 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.02 -3 10 10 -2 10 -1 10 0 10 1 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve FDY1002PZ Rev.B 5 www.fairchildsemi.com FDY1002PZ Dual P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET Dimensional Outline and Pad Layout 1.70 1.50 0.30 0.15 6 4 0.50 0.50 1.20 BSC 1.70 1.55 1.25 1.80 1 (0.20) 3 0.30 0.50 1.00 0.60 0.56 0.18 0.10 0.55 LAND PATTERN RECOMMENDATION SEE DETAIL A 0.35 BSC 0.20 BSC DETAIL A 0.10 0.00 SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY1002PZ Rev.B 6 www.fairchildsemi.com FDY1002PZ Dual P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM The Power Franchise(R) tm PDP SPMTM Power-SPMTM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TM TinyPowerTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM SmartMaxTM TinyWireTM SMART STARTTM SerDesTM SPM(R) STEALTHTM SuperFETTM UHC(R) SuperSOTTM-3 Ultra FRFETTM SuperSOTTM-6 UniFETTM SuperSOTTM-8 VCXTM SupreMOSTM VisualMaxTM SyncFETTM (R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDY1002PZ Rev. B 7 www.fairchildsemi.com |
Price & Availability of FDY1002PZ
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |