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NCE25G120T
NCE25G120T
1200V, 25A, Trench NPT IGBT
Features
Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage: VCE(sat)=2.0V@IC=25A High input impedance
Applications
Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching applications
G
CE
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General Description
Using advanced Trench NPT technology, NCE's 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications.
G E
Absolute Maximum Ratings
Symbol Description
VCES VGES IC ICM(1) PD TJ Tstg TL
Notes: 1. Repetitive rating, Pulse width limited by max. junction temperature
Ratings
1200 +/-25 @TC=25C @TC=100C @TC=25C @TC=100C 50 25 90 312 125 -55 to +150 -55 to +150 300
Units
V V A A A W W C C C
Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5seconds
Operating Junction Temperature
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Typ.
-
Thermal Characteristics
Symbol Parameter
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max.
0.4 40
Units
C/W C/W
Electrical Characteristics of the IGBT TC=25C
Symbol Parameter Off Characteristics
BVCES ICES IGES VGE(th) Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current G-E Threshold Voltage
Test Conditions
Min.
Typ. Max.
Units
VGE=0V, Ic=1mA VCE=1200V, VGE=0V VGE=25V, VCE=0V IC=25mA, VCE=VGE IC=25A, VGE=15V TC=25C
1200 4.0 -
2 2.15 3700 130 80 50 60 190 100 4.1
1 +/-250 7.0 2.5 90 180 6.2 1.5 7.7 6.9 2.4 9.3 300 23 150
V mA nA V V V pF pF pF ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
On Characteristics
VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc
Collector to Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge
IC=25A, VGE=15V TC=125C
Dynamic Characteristics
VCE=30V, VGE=0V, f=1MHz
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Switching Characteristics
VCC=600V,IC=25A, RG=10,VGE=15V, Resistive Load, TC=25C
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0.96 5.06 50 60 200 154 4.3 1.5 5.8 200 15
VCC=600V,IC=25A, RG=10,VGE=15V, Resistive Load, TC=125C VCC=600V,IC=25A, VGE=15V
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NCE25G120T
Figure 2. Typical Saturation Voltage Characteristics
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Collector Current, IC(A)
Collector Emitter Voltage, VCE(V)
Collector Current IC, (A)
Collector Emitter Voltage, VCE(V)
Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Collector Emitter Voltage, IC(V)
Figure 4. Saturation Voltage vs. VGE
Case temperature, Tc(C)
Collector Emitter Voltage, IC(V)
Gate Emitter Voltage, VGE( V)
Figure 5. Saturation Voltage vs. VGE
Collector Emitter Voltage, IC(V)
Figure 6. Saturation Voltage vs. VGE
Collector Emitter Voltage, IC(V)
Gate Emitter Voltage, VGE( V)
Gate Emitter Voltage, VGE( V)
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Figure 8. Turn-on Characteristics vs. Gate Resistance
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Switching Time (ns)
Capacitance (pF)
Collector Emitter Voltage, VCE(V)
Gate Resistance, RG ()
Figure 9. Turn-off Characteristics vs. Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Switching Loss (mJ)
Switching Time (ns)
Gate Resistance, RG ()
Gate Resistance, RG ()
Figure 11. Turn-on Characteristics vs. Collector Current
Figure 12. Turn-Off Characteristics vs. Collector Current
Switching Loss (mJ)
Switching Loss (mJ)
Collector Current, IC (A)
Collector Current, IC (A)
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Figure14. Gate Charge Characteristics
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Collector Current, IC (A)
Gate-Emitter Voltage (V)
Switching Loss (mJ)
Gate Charge, Qg (nC)
Figure 15. SOA Characteristics
Figure 16. Turn-Off SOA
Collector Current, IC(A)
Collector Emitter Voltage, (V)
Collector Current, IC(A)
Collector Emitter Voltage, (V)
Figure 17. Transient Thermal Impedance of IGBT
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NCE25G120T
Mechanical Dimensions (continued)
TO-247
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NCE25G120T
:
/ 20103
ATTENTION:
Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications. NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein. Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied 8 7
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regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use. This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.
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