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ZXTN25015DFH 15V, SOT23, NPN medium power transistor Summary BVCEX > 30V BVCEO > 15V BVECO > 4.5V IC(cont) = 5A VCE(sat) < 40 mV @ 1A RCE(sat) = 25 m PD = 1.25W Complementary part number ZXTP25015DFH Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. C B Features * * * High power dissipation SOT23 package High gain Low saturation voltage E Applications * * * * LED driving DC-DC converters MOSFET and IGBT gate driving Motor drive E C B Pinout - top view Tape width (mm) 8 Quantity per reel 3,000 Ordering information Device ZXTN25015DFHTA Reel size (inches) 7 Device marking 1A8 Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25015DFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Peak pulse current Power dissipation at Tamb = 25C(a) Linear derating factor Power dissipation at Tamb = 25C(b) Linear derating factor Power dissipation at Tamb = 25C(c) Linear derating factor Power dissipation at Tamb = 25C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD Symbol VCBO VCEX VCEO VECO VEBO IC ICM PD Limit 40 30 15 4.5 7 5 15 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 - 55 to 150 Unit V V V V V A A W mW/C W mW/C W mW/C W mW/C C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25015DFH Characteristics Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25015DFH Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-emitter breakdown voltage Collector-emitter breakdown voltage (reverse blocking) Collector-emitter breakdown voltage (reverse blocking) Collector cut-off current Symbol BVCEO BVECX Min. 15 6 Typ. 22 8 Max. Unit Conditions V V IC = 10mA (*) IE = 100 A, RBC < 1k or 0.25v > VBC > -0.25V IE = 100 A, IE = 100 A VCB = 40V VCB = 40V, Tamb= 100C VCE = 30V; RBE < 1k or -1V < VBE < 0.25V VEB = 5.6V IC = 1A, IB = 100mA(*) IC = 1A, IB = 10mA(*) IC = 2A, IB = 20mA(*) IC = 5A, IB = 500mA(*) IC = 5A, IB = 100mA(*) IC = 5A, IB = 500mA(*) IC = 5A, VCE = 2V(*) IC = 10mA, VCE = 2V(*) IC = 2A, VCE = 2V(*) IC = 5A, VCE = 2V(*) IC = 15A, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 50MHz 30 pF ns ns ns ns 2%. BVECO 4.5 7 5.3 8.2 <1 50 20 100 V V nA A nA Emitter-base breakdown voltage BVEBO ICBO Collector-emitter cut-off current ICEX Emitter cut-off current Collector-emitter saturation voltage IEBO VCE(sat) <1 30 60 90 125 160 50 40 80 125 155 215 1090 900 900 nA mV mV mV mV mV mV mV Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio VBE(sat) VBE(on) hFE 300 300 150 25 990 805 450 400 275 40 240 22.7 16 41 148 23 300 s; duty cycle Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO t(d) t(r) t(s) t(f) 150 VCB = 10V, f = 1MHz(*) VCC = 10V. IC = 3A, IB1 = IB2= 50mA. NOTES: (*) Measured under pulsed conditions. Pulse width Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25015DFH Typical characteristics Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25015DFH Package outline - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - May 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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