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| PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN64N50P VDSS ID25 RDS(on) trr = = 500V 50A 85m 200ns miniBLOC, SOT-227 B E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from Case for 10s 50/60 Hz, RMS IISOL 1mA Mounting Torque Terminal Connection Torque t = 1min t = 1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 500 500 30 40 50 150 64 2.5 20 625 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Low Gate Drive Requirement High Power Density Applications: Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250A VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 32A, Note 1 TJ = 125 Characteristic Values Min. Typ. Max. 500 3.0 5.5 200 25 1 85 V V nA A mA m Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls G = Gate S = Source G S S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source (c) 2009 IXYS CORPORATION, All Rights Reserved DS99349F(05/09) IXFN64N50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 32A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 32A RG = 2 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 32A, Note 1 Characteristic Values Min. Typ. Max. 30 50 9700 970 30 30 25 85 22 150 50 50 0.20 S nF pF pF ns ns ns ns nC nC nC C/W C/W SOT-227B Outline Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0V Characteristic Values (TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. 64 250 1.5 200 0.6 6.0 A A V ns C A Repetitive, Pulse Width Limited by TJM IF = 64A, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/s VR = 100V Note 1: Pulse Test, t 300s; Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN64N50P Fig. 1. Output Characteristics @ 25C 70 60 50 VGS = 10V 8V 7V 160 140 120 VGS = 10V 8V Fig. 2. Extended Output Characteristics @ 25C ID - Amperes ID - Amperes 6V 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 5V 100 80 60 7V 6V 40 20 0 0 5 10 15 20 25 30 5V VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C 70 60 50 VGS = 10V 8V 7V 3.2 3.0 2.8 2.6 Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature VGS = 10V RDS(on) - Normalized 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 I D = 32A I D = 64A ID - Amperes 6V 40 30 20 10 0 0 2 4 6 8 10 12 14 16 5V -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current 3.4 3.2 3.0 2.8 VGS = 10V TJ = 125C Fig. 6. Maximum Drain Current vs. Case Temperature 55 50 45 40 RDS(on) - Normalized 2.6 ID - Amperes TJ = 25C 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 20 40 60 80 100 120 140 160 35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade (c) 2009 IXYS CORPORATION, All Rights Reserved IXFN64N50P Fig. 7. Input Admittance 90 80 70 90 80 70 TJ = - 40C Fig. 8. Transconductance ID - Amperes 60 50 40 30 20 10 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 g f s - Siemens 60 50 25C TJ = 125C 25C - 40C 125C 40 30 20 10 0 0 20 40 60 80 100 120 140 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 240 220 200 180 10 9 8 7 VDS = 250V I D = 32A I G = 10mA Fig. 10. Gate Charge IS - Amperes VGS - Volts TJ = 125C TJ = 25C 160 140 120 100 80 60 40 20 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 Fig. 12. Maximum Transient Thermal Impedance 1.000 f = 1 MHz Capacitance - PicoFarads Ciss 10,000 1,000 Coss 100 Crss 10 0 5 10 15 20 25 30 35 40 Z(th)JC - C / W 0.100 0.010 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_64N50P(9J)4-27-09 |
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