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4V Drive Pch MOSFET
RRH140P03
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
SOP8
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
Application Switching
Each lead has same dimensions
Packaging specifications
Package Type RRH140P03 Code Basic ordering unit (pieces) Taping TB 2500
Inner circuit
(8) (7) (6) (5)
2 1
(1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain
Absolute maximum ratings (Ta = 25C)
(1) (2) (3) (4)
Parameter Drain-source voltage Gate-source voltage Continuous Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board.
Symbol VDSS VGSS ID IDP Is Isp PD
1 2 1
Limits -30 20 14 56 -1.6 -56 2.0 150 -55 to +150
Unit V V A A A A W
1 ESD PROTECTION DIODE 2 BODY DIODE
Pulsed Continuous Pulsed
Tch Tstg
C C
Thermal resistance
Parameter Channel to Ambient
Mounted on a ceramic board.
Symbol Rth (ch-a)
Limits 62.5
Unit
C / W
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1/5
2010.02 - Rev.A
RRH140P03
Electrical characteristics (Ta = 25C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
Symbol
IGSS V (BR)DSS IDSS VGS (th) RDS (on) l Yfs l Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Min.
- -30 - -1.0 - - - 20 - - - - - - - - - -
Typ.
- - - - 5.0 6.7 7.3 - 8000 1000 1000 32 80 360 200 80 18 30
Max.
10 - -1 -2.5 7.0 9.4 10.2 - - - - - - - - - - -
Unit
A V A V
Test Conditions VGS=20V, VDS=0V ID=-1mA, VGS=0V VDS=-30V, VGS=0V VDS=-10V, ID=-1mA ID=-14A, VGS=-10V
m
ID=-7A, VGS=-4.5V ID=-7A, VGS=-4.0V
S pF pF pF ns ns ns ns nC nC nC
ID=-14A, VDS=-10V VDS=-10V VGS=0V f=1MHz ID=-7A, VDD VGS=-10V RL=2.1 RG=10 ID=-14A, VDD VGS=-5V RL=1.1 RG=10 -15V
-15V
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter Forward Voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. -1.2
Unit V
Test Conditions Is=-14A, VGS=0V
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2/5
2010.02 - Rev.A
RRH140P03
Electrical characteristic curves
20 18 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1
VGS= -2.2V VGS= -2.4V
Data Sheet
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
VGS= -10V VGS= -4.5V VGS= -4.0V
VGS= -3.0V
Ta=25C Pulsed
20 18 16 14 12 10 8 6 4 2 0 0 2 4
VGS= -10V Ta=25C VGS= -4.5V Pulsed VGS= -4.0V
100
VDS= -10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C
10
VGS= -2.6V
VGS= -2.6V VGS= -2.4V
1
0.1
VGS= -2.2V 6 8 10
0.01 1 1.5 2 2.5 3
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( )
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics( )
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
100
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
Ta =25C Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V
100
VGS= -10V Pulsed
100
10
10
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= -4.5V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
10
1 0.1 1 10 100
1 0.1 1 10 100
1 0.1 1 10 100
DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( )
DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( )
DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( )
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
Ta=125C Ta=75C Ta=25C Ta= -25C
REVERSE DRAIN CURRENT : -Is [A]
100
VGS= -4.0V Pulsed
100
VDS= -10V Pulsed
100
VGS=0V Pulsed
10
10 Ta= -25C Ta=25C Ta=75C Ta=125C
10
1 Ta=125C Ta=75C Ta=25C Ta=-25C 0 0.5 1 1.5
1
0.1
1 0.1 1 10 100
0.1 0.01
0.01
0.1
1
10
100
DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( )
DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
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3/5
2010.02 - Rev.A
RRH140P03
50 10000 10
Data Sheet
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
SWITCHING TIME : t [ns]
40 30 20 10 0 0 5 10 ID= -14.0A
td(off) 1000 tf
GATE-SOURCE VOLTAGE : -VGS [V]
Ta=25C Pulsed
Ta=25C VDD= -15V VGS=-10V RG=10 Pulsed
Ta=25C VDD= -15V ID=-14A RG=10 6 Pulsed 8 4 2 0 0 20 40 60 80 100 120 140 160 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics
ID= -7.0A
100
td(on)
10 15 0.01 0.1 1
t 10 100
GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics
100000
Ta=25C f=1MHz VGS=0V
1000 100
Operation in this area is limited by R DS(ON) (VGS=-10V)
PW=100us
10000
DRAIN CURRENT : -ID (A)
CAPACITANCE : C [pF]
Ciss
10 1 0.1 0.01
PW=1ms
DC operation
PW = 10ms
1000 Coss Crss 100 0.01 0.1 1 10 100
Ta = 25C Single Pulse Mounted on a CERAMIC BOARD
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage 10
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Maximum Safe Operating Aera
NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t)
1
0.1
Ta = 25C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)xRth(ch-a) Rth(ch-a) = 62.5 C/W
0.01
0.001 0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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4/5
2010.02 - Rev.A
RRH140P03
Measurement circuit
VGS ID RL D.U.T. RG VDD VDS
Data Sheet
Pulse Width VGS 10% 50% 10% VDS 90% td(on) ton tr td(off) toff 90% 50% 10% 90% tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VGS
ID RL
VDS
VG Qg VGS
IG(Const.) D.U.T. RG VDD
Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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5/5
2010.02 - Rev.A
Notice
Notes
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