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Advanced Technical Information
HiPerFETTM Power MOSFETs
IXFK 20N120 IXFX 20N120
VDSS ID25
RDS(on)
= 1200 V = 20 A = 0.75
trr 300 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C
Maximum Ratings 1200 1200 30 40 20 80 10 40 2 5 780 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A mJ J V/ns W C C C C Nm/lb.in. 6 10 g g
PLUS 247TM (IXFX)
G
D
D (TAB) S
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264
Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting Space savings High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 2.5 V 4.5 V 100 nA TJ = 25C TJ = 125C 100 A 2 mA 0.75
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 30 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 2
(c) 2003 IXYS All rights reserved
DS99112(11/03)
IXFK 20N120 IXFX 20N120
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 2 15 27 7400 VGS = 0 V, VDS = 25 V, f = 1 MHz 550 100 25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 45 75 20 160 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 35 60 0.16 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
PLUS 247TM Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 80 1.5 300 A A V ns C A
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
TO-264 AA Outline
IF = IS, -di/dt = 100 A/s, VR = 100 V
1.4 8
Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 s, duty cycle d 2 %
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXFK 20N100 IXFX 20N100
Fig. 1. Output Characteristics @ 25 deg. C
35 30 25 VGS = 10V 6V 22 20 18
Fig. 2. Output Characteristics @ 125 Deg. C
VGS = 10V 5V
I D - Amperes
5V
16 14 12 10 8 6 4 4V
I D - Amperes
20 15 10 5 0 0 5 10 15 20 25 30
4V
2 0 0 5 10 15 20 25 30 35 40
V D S - Volts Fig. 3. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature
2.8 2.6 2.4 VGS = 10V 2.6 2.4 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to ID25 Value vs. ID
R D S (on) - Normalized
R D S (on) - Normalized
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 I D = 20A I D = 10A
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15
TJ = 125C
TJ = 25C
20
25
30
35
TJ - Degrees Centigrade Fig. 5. Drain Current vs. Case Tem perature
24 22 20 18 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 0 3 3.5 5 25 30
I D - Amperes Fig. 6. Input Adm ittance
I D - Amperes
I D - Amperes
20
15 10
TJ = 125C 25C -40C
4
4.5
5
5.5
TC - Degrees Centigrade
V G S - Volts
IXFK 20N100 IXFX 20N100
Fig. 7. Transconductance
55 50 45 40 60 50 70
Fig. 8. Source Current vs. Source-To-Drain Voltage
g f s - Siemens
35 30 25 20 15 10 5 0 0
I S - Amperes
TJ = -40C 25C 125C
40 30 20 10 0 TJ = 125C TJ = 25C
5
10
15
20
25
30
35
0.4
0.6
0.8
1
1.2
1.4
I D - Amperes Fig. 9. Gate Charge
10 9 8 7 VDS = 600V I D = 10A I G = 10mA 10000
V S D - Volts Fig. 10. Capacitance
Ciss
Capacitance - pF
1000
VG S - Volts
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160
Coss
100
Crss f = 1MHz
10 0 5 10 15 20 25 30 35 40
Q G - nanoCoulombs
V D S - Volts
Fig. 11. Maxim um Transient Therm al Resistance
0.18 0.16 0.14
R (th) J C - (C/W)
0.12 0.1 0.08 0.06 0.04 0.02 0 1 10
Pulse Width - milliseconds
100
1000

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