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PD - 91787F RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) ID IRHNA57Z60 100K Rads (Si) 0.0035 75*A IRHNA53Z60 300K Rads (Si) 0.0035 75*A IRHNA54Z60 600K Rads (Si) 0.0035 75*A IRHNA58Z60 1000K Rads (Si) 0.0040 75*A International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. IRHNA57Z60 30V, N-CHANNEL 4# TECHNOLOGY c SMD-2 Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by internal wire diameter For footnotes refer to the last page 75* 75* 300 300 2.4 20 500 75 30 0.83 -55 to 150 300 (for 5s) 3.3 (Typical) Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 07/24/02 IRHNA57Z60 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 30 -- -- 2.0 45 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.026 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.0035 4.0 -- 10 25 100 -100 200 55 40 35 125 80 50 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 45A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 45A VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 15V VDD = 15V, ID = 45A, VGS =12V, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 9110 4620 150 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 75* 300 1.3 165 690 Test Conditions A V nS nC Tj = 25C, IS = 45A, VGS = 0V Tj = 25C, IF = 45A, di/dt 100A/s VDD 25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units -- -- -- 1.6 0.42 -- C/W Test Conditions soldered to a 2" square copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHNA57Z60 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 30 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.004 0.0035 1.3 30 1.5 -- -- -- -- -- -- -- 4.0 100 -100 25 0.005 0.004 1.3 V nA A V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=24V, VGS =0V VGS = 12V, ID =45A VGS = 12V, ID =45A VGS = 0V, IS = 45A 1. Part numbers IRHNA57Z60, IRHNA53Z60 and IRHNA54Z60 2. Part number IRHNA58Z60 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 37.9 59.4 80.3 Energy (MeV) 255 290 313 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 33.4 30 30 30 25 20 28.8 25 25 20 15 10 26.5 22.5 22.5 15 10 -- 35 30 25 VDS 20 15 10 5 0 0 -5 -10 VGS -15 -20 Br I AU Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA57Z60 Pre-Irradiation 1000 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 5.0V 5.0V 10 0.1 20s PULSE WIDTH T = 25 C J 1 10 100 10 0.1 20s PULSE WIDTH T = 150 C J 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 C TJ = 150 C R DS(on) , Drain-to-Source On Resistance (Normalized) 45A ID = 75 A I D , Drain-to-Source Current (A) 1.5 100 1.0 0.5 10 5.0 15 25V V DS = 50V 20s PULSE WIDTH 7.0 7.5 5.5 6.0 6.5 8.0 0.0 -60 -40 -20 VGS = 12V 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNA57Z60 20000 C, Capacitance (pF) 15000 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 45 A VDS = 24V VDS = 15V 15 C oss 10000 Ciss 10 5000 5 C rss 0 1 10 100 0 0 25 50 75 FOR TEST CIRCUIT SEE FIGURE 13 100 125 150 175 200 225 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) TJ = 25 C OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) 100 TJ = 150 C 100us 10 100 1ms 1 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNA57Z60 Pre-Irradiation 250 LIMITED BY PACKAGE VGS 200 VDS RD D.U.T. + I D , Drain Current (A) RG -VDD 150 VGS Pulse Width 1 s Duty Factor 0.1 % 100 Fig 10a. Switching Time Test Circuit 50 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA57Z60 1200 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 1000 TOP BOTTOM ID 34A 47A 75A VD S L D R IV E R 800 RG D .U .T . IA S 600 + - VD D A VGS 20V tp 400 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 V (B R )D S S tp Starting T , Junction Temperature( C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNA57Z60 Pre-Irradiation Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25C, L= 0.3 mH Peak IL = 75A, VGS = 12V ISD 75A, di/dt 94A/s, VDD 30V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/02 8 www.irf.com |
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