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HSBD136 M050A A1150 7152I02L 30WQ05F SA25F020 CPT40040 160NTD
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2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MX086-4
60 Volts 50 Amps 2 s BATTERY BYPASS CHARGE DIODE
SYMBOL VRRM IF(ave) IFSM Tj Tstg JC
MIN 2.5 2.75 3.2
Features
* * * * * Standard spacecraft screening is per Microsemi PS11.50 "S" (no suffix letter required, MX086-4 is only "S" screened) Designed for battery cell bypass Passivated mesa structure for very low leakage currents 4 die stacked in one package Hermetically sealed, ceramic surface mount power package
Maximum Ratings @ 25C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage (NOT A BLOCKING DIODE!) Average Rectified Forward Current, Tc 125C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Junction Temperature Range (for bypass operation) Storage Temperature Range Thermal Resistance, Junction to Case:
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s, d/c 2% SYMBOL IR VF1 VF2 VF3 CONDITIONS VR= 60 Vdc, Tc= 25C IF= 100 mA, Tc= 25C IF= 5 A, Tc= 25C IF = 10A, Tc= 25C
MAX. 60 50 300 -20 to +275 -65 to +175 0.9
TYP. 1 MAX 10 3.0 3.73 3.86
UNIT Volts Amps Amps C C C/W
UNIT A V V
Mechanical Outline
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