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2.5V Drive Nch MOSFET
RTR025N05
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSMT3
1.0MAX 2.9 0.4 0.85 0.7
(1)
(2)
0.95 0.95 1.9 0.16
(1) Gate (2) Source
Each lead has same dimensions Abbreviated symbol : PW
Application Switching
(3) Drain
Packaging specifications
Package Type RTR025N05 Code Basic ordering unit (pieces) Taping TL 3000
Inner circuit
(3)
2 (1)
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits 45 12 2.5 10 0.8 10 1.0 150 -55 to +150 Unit V V A A A A W C C
1 (2) 1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Gate (2) Source (3) Drain
Total power dissipation Channel temperature Range of Storage temperature
1 Pw10s, Duty cycle1% 2 When mounted on a ceramic board
Thermal resistance
Parameter Channel to ambient
When mounted on a ceramic board
Symbol Rth (ch-a)
Limits 125
Unit C / W
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1/4
2009.06 - Rev.A
0.3~0.6
Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).
(3)
1.6 2.8
0~0.1
RTR025N05
Electrical characteristics (Ta=25C)
Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
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Typ. - - - - 95 100 125 - 250 60 30 9 15 20 14 3.2 0.9 0.7 Max. 10 - 1 1.5 130 140 175 - - - - - - - - - - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS= 12V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 2.5A, VGS= 4.5V ID= 2.5A, VGS= 4V ID= 2.5A, VGS= 2.5V VDS= 10V, ID= 2.5A VDS= 10V VGS= 0V f=1MHz VDD 25V ID= 1.2A VGS= 4.5V RL 20.8 RG=10 VDD 25V ID= 2.5A VGS= 4.5V RL 10 RG=10
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf
Qg Qgs Qgd

Min. - 45 - 0.5 - - - 2.0 - - - - - - - - - -
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS= 2.5A, VGS=0V
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c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.06 - Rev.A
RTR025N05
Body diode characteristics curves
5
VGS= 10V VGS= 4.5V
Data Sheet
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5 VGS= 4.5V VGS= 4.0V VGS= 2.5V Ta=25C Pulsed DRAIN CURRENT : ID [A] 10 VDS= 10V Pulsed
Ta=25C Pulsed DRAIN CURRENT : ID [A]
DRAIN CURRENT : ID [A]
4
VGS= 4.0V
4
VGS= 2.5V 3 VGS= 2.0V
1 Ta= 125C Ta= 75C Ta= 25C Ta= - 25C
3
VGS= 2.0V
0.1
2
2 VGS= 1.8V 1
1 VGS= 1.8V 0 0 0.2 0.4 0.6 0.8 1
0.01
0 0 2 4 6 8 10
0.001 0 0.5 1 1.5 2 2.5
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics()
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics()
GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics
1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
VGS= 2.5V VGS= 4.0V VGS= 4.5V
100
100
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
Ta= 25C Pulsed
1000
VGS= 4.5V Pulsed
1000 Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= 4.0V Pulsed
100 Ta=125C Ta=75C Ta=25C Ta= -25C 10 0.01
10 0.01
0.1
1
10
10 0.01
0.1
1
10
0.1 DRAIN-CURRENT : ID [A]
1
10
DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current()
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
1000 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= 2.5V Pulsed
10
REVERSE DRAIN CURRENT : Is [A]
VDS= 10V Pulsed
10
VGS=0V Pulsed
1
100 Ta=125C Ta=75C Ta=25C Ta= -25C 10 0.01
1
Ta= -25C Ta=25C Ta=75C Ta=125C
0.1
Ta=125C Ta=75C Ta=25C Ta=-25C
0.1
1
10
0.1 0.01
0.01 0.1 1 10 0 0.5 1 1.5
DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current
SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
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3/4
2009.06 - Rev.A
RTR025N05
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 350 300 250 ID = 1.2A 200 150 100 50 0 0 2 4 6 8 10 1 0.01 0.1 1 10 Ta=25C Pulsed SWITCHING TIME : t [ns] ID = 2.5A 1000 td(off) tf 100 Ta=25C VDD = 25V VGS=4.5V RG=10 Pulsed 5 GATE-SOURCE VOLTAGE : VGS [V]
Data Sheet
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4
3
2 Ta=25C VDD = 25V ID = 2.5A RG=10 Pulsed 0 1 2 3 4
10 td(on)
1
tr
0
GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : ID [A] Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics
1000 Ciss CAPACITANCE : C [pF]
100
Crss Ta=25C f=1MHz VGS=0V 0.01 0.1 Coss
10
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage
Measurement circuits
VGS ID RL
VGS
VDS
50% 10%
Pulse Width 90% 50% 10%
D.U.T. RG VDD
VDS
10%
90% td(on) ton tr td(off) toff
90% tr
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
VGS ID RL IG (Const.) RG D.U.T. VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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c 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.06 - Rev.A
Notice
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Notes
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