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| FDS4435BZ P-Channel PowerTrench(R) MOSFET www..com June 2007 FDS4435BZ P-Channel PowerTrench(R) MOSFET -30V, -8.8A, 20m Features Max rDS(on) = 20m at VGS = -10V, ID = -8.8A Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of 3.8KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Termination is Lead-free and RoHS compliant General Description This P-Channel MOSFET is produced (R) using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D D D D D G S Pin 1 SO-8 S S D D 6 7 8 3 2 1 S S S D 5 4 G MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TA = 25C TA = 25C (Note 1a) (Note 1b) (Note 4) TA = 25C (Note 1a) Ratings -30 25 -8.8 -50 2.5 1.0 24 -55 to +150 Units V V A W mJ C Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 25 50 C/W Package Marking and Ordering Information Device Marking FDS4435BZ Device FDS4435BZ Package SO-8 Reel Size 13'' Tape Width 12mm Quantity 2500units (c)2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C 1 www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench(R) MOSFET www..com Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -24V, VGS = 0V VGS = 25V, VDS = 0V -30 -21 1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -8.8A VGS = -4.5V, ID = -6.7A VGS = -10V, ID = -8.8A, TJ = 125C VDS = -5V, ID = -8.8A -1 -2.1 6 16 26 22 24 20 35 28 S m -3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz 1385 275 230 4.5 1845 365 345 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to -10V VGS = 0V to -5V VDD = -15V, ID = -8.8A VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6 10 6 30 12 28 16 5.2 7.4 20 12 48 22 40 23 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -8.8A (Note 2) -0.9 29 23 -1.2 44 35 V ns nC IF = -8.8A, di/dt = 100A/s NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V (c)2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C 2 www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench(R) MOSFET www..com Typical Characteristics TJ = 25C unless otherwise noted 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.0 VGS = -10V VGS = -5V VGS = -3.5V 3.5 3.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 40 30 20 10 VGS = -4.5V VGS = -4.5V 2.5 VGS = -4V VGS = -5V VGS = -4V VGS = -3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 2.0 1.5 VGS = -10V 1.0 0.5 0 10 20 30 40 50 -ID, DRAIN CURRENT(A) 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 60 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -75 ID = -8.8A VGS = -10V ID = -8.8A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 50 40 30 20 TJ = 25oC TJ = 125oC rDS(on), DRAIN TO -50 -25 0 25 50 75 100 125 150 o 10 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. Normalized On- Resistance vs Junction Temperature 50 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 40 30 20 TJ = 150oC VDS = -5V 10 1 0.1 0.01 0.001 TJ = 150oC TJ = 25oC TJ = -55oC 10 TJ = 25oC TJ =-55oC 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C 3 www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench(R) MOSFET www..com Typical Characteristics TJ = 25C unless otherwise noted 10 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -8.8A 4000 Ciss CAPACITANCE (pF) VDD = -10V 8 6 VDD = -15V VDD = -20V 1000 Coss 4 2 0 0 5 10 15 20 25 30 Qg, GATE CHARGE(nC) Crss f = 1MHz VGS = 0V 100 0.1 1 10 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 -Ig, GATE LEAKAGE CURRENT(A) -4 20 -IAS, AVALANCHE CURRENT(A) VDS = 0V 10 10 10 10 10 10 -5 TJ = 125oC -6 TJ = 25oC TJ = 125oC -7 TJ = 25oC -8 1 0.01 -9 0.1 1 10 30 0 5 10 15 20 25 30 tAV, TIME IN AVALANCHE(ms) -VGS, GATE TO SOURCE VOLTAGE(V) Figure 9. Unclamped Inductive Switching Capability 10 -ID, DRAIN CURRENT (A) Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 -ID, DRAIN CURRENT (A) 8 VGS = -10V 10 100us 1ms 6 4 2 RJA = 50 C/W o 1 THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RJA = 125 C/W TA = 25oC o 10ms 100ms 1s 10s DC VGS = -4.5V 0.1 0 25 50 75 100 o 125 150 0.01 0.1 1 10 80 TA, AMBIENT TEMPERATURE ( C) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area (c)2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C 4 www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench(R) MOSFET www..com Typical Characteristics TJ = 25C unless otherwise noted 100 VGS = -10V P(PK), PEAK TRANSIENT POWER (W) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A -----------------------125 10 TA = 25oC 1 0.6 -3 10 SINGLE PULSE RJA = 125oC/W 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZJA D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 SINGLE PULSE RJA = 125oC/W 0.01 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C 5 www.fairchildsemi.com www..com TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production (c) 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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