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| IXA20I1200PB preliminary XPT IGBT Single IGBT (C) 2 I C25 = = VCES VCE(sat)typ = 33 A 1200 V 1.8 V Part number IXA20I1200PB (G) 1 (E) 3 Features / Advantages: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - low EMI - square RBSOA @ 3x Ic Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) Applications: AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Package: Housing: TO-220 rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant IGBT Ratings Symbol VCES VGES IC25 I C90 Ptot I CES I GES VCE(sat) VGE(th) Q Gon t d(on) tr t d(off) tf Eon Eoff RBSOA Total power dissipation Collector emitter leakage current Definition Collector emitter voltage Maximum DC gate voltage Collector current Conditions VGE = 0 V TVJ = 25C TVJ = 25C TC = 25C TC = 90C TVJ = 25C VCE = VCES ; VGE = 0 V VCE = 0 V; VGE = 20 V I C = 16 A; VGE = 15 V I C = 0.6 mA; VGE = VCE VCE = 600 V; VGE = 15 V; IC = 15 A TVJ = 25C TVJ = 125 C TVJ = 25C TVJ = 125 C min. typ. max. 1200 20 33 22 130 0.1 Unit V V A A W mA mA nA V V V nC ns ns ns ns mJ mJ 0.1 500 1.8 2.1 5.5 6 47 70 40 6.5 2.1 Gate emitter leakage current Collector emitter saturation voltage Gate emitter threshold voltage Total gate charge Turn-on delay time Current rise time Turn-off delay time Current fall time Turn-on energy per pulse Turn-off energy per pulse Reverse bias safe operation area Inductive load VCE = 600 V; IC = 15 A VGE = 15 V; R G = 56 VGE = 15 V; R G = 56 TVJ = 125 C TVJ = 125C 250 100 1.55 1.7 45 A VCEK = 1200 V VCE = 900 V; VGE = 15 V RG = 56 ; non-repetitive TVJ = 125C 10 60 0.95 s A K/W www..com circuit safe operation area Short SCSOA t SC I SC RthJC Short circuit duration Short circuit current Thermal resistance juntion to case IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20090409 (c) 2009 IXYS all rights reserved IXA20I1200PB preliminary Diode Ratings Symbol I F25 I F 90 VF Q rr I RM t rr Erec(off) RthJC Forward voltage Definition Forward current Conditions TC = 25C TC = 90C IF = A TVJ = 25C TVJ = 125 C min. typ. max. n/a n/a n/a V Unit A A V V C A ns mJ n/a n/a n/a n/a n/a n/a Reverse recovery charge Maximum reverse recovery current Reverse recovery time Reverse recovery losses at turn-off Thermal resistance juntion to case VR = 600 V; di F /dt = IF = A A/s; TVJ = 125 C K/W Equivalent Circuits for Simmulation I V0 R0 Ratings Symbol V0 R0 V0 R0 R1 C1 Definition IGBT min. TVJ = 150 C TVJ = 150 C typ. max. 1.1 86 n/a n/a Unit V m V m Diode R2 C2 R3 C3 R4 C4 IGBT R1 R2 R3 R4 tbd tbd tbd tbd tbd tbd tbd tbd Diode n/a n/a n/a n/a n/a n/a n/a n/a 1 2 3 4 www..com IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20090409 (c) 2009 IXYS all rights reserved IXA20I1200PB preliminary Package TO-220 Ratings Symbol TVJ Tstg RthCH Weight MD FC Mounting torque Mounting force with clip Definition Virtual junction temperature Storage temperature Thermal resistance case to heatsink Conditions min. -55 -55 typ. max. 150 150 Unit C C K/W g 0.50 2 0.4 20 0.6 60 Nm N Product Marking Part number I X A 20 I 1200 PB = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Single IGBT Reverse Voltage [V] TO-220AB (3) Marking on product Logo DateCode Assembly Code abcdef YYWW XXXXXX Ordering Standard Part Name IXA 20 I 1200 PB Marking on Product IXA20I1200PB Delivering Mode Base Qty Code Key Dim. M C F Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 3.54 5.85 2.54 1.15 2.79 0.64 2.54 4.32 1.14 0.35 2.29 10.66 4.08 6.85 3.18 1.65 5.84 1.01 BSC 4.82 1.39 0.56 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 N E A B C D E F G H J K Q R D G www..com J L A H B K M N Q R IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20090409 (c) 2009 IXYS all rights reserved IXA20I1200PB preliminary 30 25 20 IC [A] VGE = 15 V 30 25 20 TVJ = 25C TVJ = 125C TVJ = 125C VGE = 15 V 17 V 19 V 13 V 11 V 15 10 5 0 0 IC [A] 15 10 5 0 9V 1 2 VCE [V] 3 0 1 2 3 VCE [V] 4 5 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20 IC = 15 A VCE = 600 V 15 30 25 20 IC 15 [A] VGE [V] 10 10 5 0 5 6 7 8 9 VGE [V] Fig. 3 Typ. tranfer characteristics TVJ = 125C TVJ = 25C 5 0 10 11 12 13 0 10 20 30 QG [nC] 40 50 60 Fig. 4 Typ. turn-on gate charge 4 RG = 56 VCE = 600 V VGE = 15 V TVJ = 125C 2.8 Eon Eoff E IC = 15 A VCE = 600 V VGE = 15 V TVJ = 125C 3 2.4 E [mJ] 2 2.0 [mJ] Eoff Eon 1 www..com 1.6 0 0 5 10 15 20 25 30 35 IC [A] Fig. 5 Typ. switching energy vs. collector current 1.2 40 60 80 100 120 140 160 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20090409 (c) 2009 IXYS all rights reserved |
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