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| NTE985 Integrated Circuit TV Luminance Processor Description: The NTE985is a monolithic silicon integrated circuit that performs the luminance processing functions of amplification; contrast, brightness and peaking control; blanking; and black-level clamping. Features: D Black-Level Clamping D Linear DC Controls for Brightness, Contrast and Peaking D Horizontal and Vertical Blanking D "Hermetic Chip" Construction D Silicon Nitride Passivated D Platinum Silicide Ohmic Contacts D Operates with Standard or Tapped Delay Line Absolute Maximum Ratings: DC Supply Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57mA Device Dissipation: Up to TA = +55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Above TA = +55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate linearly 7.9mW/C Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +85C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Lead Temperature (During Soldering, 1/16" 1/32" from case, 10sec max), TL . . . . . . . . . . . +265C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Bias Volts Static Characteristics Voltage At Term. 13 Quiescent Voltage At Term. 4 Quiescent Voltage At Term 7 Current into Term. 13 (Term 13 Connected to 11V) Dynamic Characteristics Wide-Band Gain (Note 1) Contrast Gain Reduction (Note 2) Peaking Gain (Note 1) Peaking Gain Reduction (Note 3) Max. Intermodulation Distortion 3.8V (Note 4) 5V (Note 5) 7.3 7.3 7.3 7.3 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 1 1 1 1 2 2 2 2 1 1 1 1 1 1 1 1 1 2 1 1 2 2 2 2 1 1 1 1 1 27 9 16 3 30 13 18 5 - 17 - dB dB dB dB 6.5 6.5 6.5 6.5 2 2 2 2 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 4 3 2 3 1 1 1 1 2 2 2 2 2 2 2 2 1 1 1 1 1 1 1 2 11 3.3 7.1 10 12.3 4 7.7 18 13.2 5.7 8.3 30 V V V mA S1 S2 S3 S4 Test Conditions S5 S6 S7 S8 S9 S10 S11 Min Typ Max Switching Positions for Characteristics Measurements Limits U n i t 7.3 7.3 1 1 - - 1 1 1 1 1 1 2 2 - - 2 2 1 1 2 2 1 1 - - 20 40 - - % % Note 1 Set 50kHz generator for 200mVrms. Adjust R1 Peaking control for minimum setting, measure wide-band gain at terminal 7. Note 2 Set 50kHz generator for 200mVrms. Adjust R1 for minimum setting, measure contrast gain reduction at terminal 7. Note 3 Set 50kHz generator for 200mVrms. Adjust R1 for minimum setting, measure peaking gain reduction at terminal 7. Note 4 Adjust R1 for minimum setting. With S2 at switch position 1 and S7 at switch position 3, set 50kHz generator for 3.8Vp-p. Then with S2, set 1MHz generator for 200mVrms. Then with S7 at switch position 2, measure downward modulation of the 1MHz signal due to the 50kHz signal. A B Modulated I-MHz Signal A = Amplitude of 50kHz signal at deepest trough B = Peak amplitude of 50kHz signal Downward Modulation = B-A B Note 5 Repeat step 4 except that the 50kHz generartor must be set at 5Vp-p Pin Connection Diagram Video Input Peaking Input Peaking Input Video Output Substrate Clamp Input Clamp Video Output Blanking Input 1 2 3 4 5 6 7 8 16 N.C. 15 N.C. 14 N.C. 13 Shunt Reg and Bias 12 Clamp Inhibit Input 11 Peaking Control 10 Contrast Control 9 Brightness Control 16 9 .260 (6.6) Max 1 8 .785 (19.9) Max .200 (5.08) Max .245 (6.22) Min .100 (2.54) .700 (17.7) .300 (7.62) |
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