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 ES1AL - ES1JL
1.0 AMP. Surface Mount Super Fast Rectifiers Sub SMA
Features
For surface mounted application Low profile package Low power loss, high efficiency, Ideal for automated placement Glass passivated chip junction High temperature soldering: 260OC/10 seconds at terminals
Mechanical Data
Cases: Sub SMA plastic case Terminal : Pure tin plated, lead free. Polarity: Color band cathode end Packing: 12mm tape per EIA STD RS-481 Weight: approx. 15mg Marking: As below table
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol ES ES ES ES ES ES Type Number 1AL 1BL 1CL 1DL 1FL 1GL Maximum Recurrent Peak Reverse Voltage 50 100 150 200 300 400 VRRM
Maximum RMS Voltage Maximum DC Blocking Voltage Marking Code Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 1.0A o Maximum DC Reverse Current @ TA =25 C o at Rated DC Blocking Voltage @ TA=100 C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Maximum Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Notes:
ES 1HL 500 350 500
EHLYM
VRMS VDC I(AV) IFSM VF IR
35 50
70
105 140 210
280 400
ES Units 1JL V 600 V 420 600
EJLYM
100 150 200 300 1.0 30 0.95 5.0 100 35 10 85 35 -55 to +150 -55 to +150 1.3
V A A
EALYM EBLYM ECLYM EDLYM EFLYM EGLYM
1.7
V uA uA nS pF
o
Trr
Cj RJA RJL
TJ TSTG
8
C/W
o o
C C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Area.
Version: A06
RATINGS AND CHARACTERISTIC CURVES (ES1AL THRU ES1JL)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
1.2 50 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE
0
FIG.2- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
AVERAGE FORWARD CURRENT. (A)
1.0
INSTANTANEOUS FORWARD CURRENT. (A)
10
0.8
ES 1A L
0.6
RESISTIVE OR INDUCTIVE LOAD 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS
-E S1 DL
0.4
1
ES
1F
L
-E
S1
G
L
0 80 90 100 110 120
o
130
140
150
0.1
LEAD TEMPERATURE. ( C)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
30 0.01 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V)
25
20
15
10
FIG.5- TYPICAL REVERSE CHARACTERISTICS
1000
5.0
INSTANTANEOUS REVERSE CURRENT. ( A)
1
10 NUMBER OF CYCLES AT 60Hz
100
100 Tj=125 0C
FIG.4- TYPICAL JUNCTION CAPACITANCE
14 12 10 8.0 6.0 4.0 2.0 0 0 1 Tj=25 0C f=1.0MHz Vsig=50mVp-p
10
Tj=85 0C
JUNCTION CAPACITANCE.(pF)
ES1
AL
- ES
1DL
ES
1FL
1 Tj=25 0C 0.1
-E
S1J
L
10
100
0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
REVERSE VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr
NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms
-1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm
ES
Version: A06
1H
0.2
L
-E
S1
JL


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