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| www..com CORPORATION G B AS 4 0 t h r u G B AS 4 0 - 0 6 V O LT A G E 4 0 V, C U R R E N T 0 . 2 A ISSUED DATE :2003/05/05 REVISED DATE :2005/12/20B S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E These schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Description Package Dimensions REF. A B C D E F Min. 2.70 2.40 1.40 0.35 0 0.45 Millimeter Max. 3.10 2.80 1.60 0.50 0.10 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at TA = 25 : Parameter Operating Junction Temperature Storage Temperature Maximum Repetitive Peak Reverse Voltage Thermal Resistance Junction to Ambient Air Peak Forward Surge Current at tp < 1.0s Maximum Average Forward Rectified Current Total Power Dissipation Symbol Tj Tstg VRRM R JA Ratings -55 ~ +125 -55 ~ +150 40 445 0.6 0.2 225 Unit : : V : /W A A mW IFSM Io PD Electrical Characteristics (at TA = 25 : unless otherwise noted) Parameter Reverse Breakdown Voltage Forward Voltage(tp < 300uS) Reverse Leakage Current Total Capacitance Reverse Recover Time Symbol V(BR)R VF IR CT Trr Min. 40 Typ. Max. 380 1000 200 5.0 5.0 Unit V mV nA pF ns IR=10 A IF1=1mA IF2=40mA VR=30V VR=0V, f=1MHz IF=IR=10mA, RL=100 , Irr=1mA Test Conditions GBAS40 Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2003/05/05 REVISED DATE :2005/12/20B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GBAS40 Page: 2/2 |
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