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Hitachi IGBT Module / Silicon N-Channel IGBT
Spec. No. IGBT-SP-99024(R1)
MBM200GR12
[Rated 200A/1200V, Dual-pack type]
FEATURES
* Low saturation voltage and high speed. * Low turn-OFF switching loss. * Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) * High reliability structure. * Isolated heat sink (terminals to base).
OUTLINE DRAWING
Unit in mm
2- 5.6
19
92 80 20
18.5
E2 G2
4-Fast-on Terminal #110
G2 E2 C2E1 E2 C1
C2E1
E2
C1
3-M5
23
23
40 0.8
G1 E1
CIRCUIT DIAGRAM
E1 G1
7 12 30 6
Weight : 230g
ABSOLUTE MAXIMUM RATINGS(TC=25C)
Item Symbol Collector-Emitter Voltage VCES Gate-Emitter Voltage VGES DC IC Collector Current 1ms ICP DC IF Forward Current 1ms IFM Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Tstg Isolation Voltage Viso Terminals Screw Torque Mounting Notes; *1: RMS current of Diode 60 Arms *2, *3 : Recommended value 1.67 N*m (17 kgf*cm) Unit V V A A W C C VRMS N*m (kgf*cm) Value 1200 20 200 400 200 400 1130 -40 ~ +150 -40 ~ +125 2500(AC 1 minute) 1.96(20) 1.96(20)
*2 *3 *1
CHARACTERISTICS (TC=25C)
Item Symbol Unit Min. Typ. Max. Test Conditions Collector-Emitter Cut-Off Current ICES mA 1.0 VCE=1200V, VGE=0V Gate-Emitter Leakage Current IGES nA VGE=20V, VCE=0V 500 Collector-Emitter Saturation Voltage VCE(sat) V 2.2 2.8 IC=200A, VGE=15V Gate-Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC=200mA Input Capacitance Cies pF 19000 VCE=10V, VGE=0V, f=1MHz Rise Time tr 0.2 0.5 VCC=600V RL=3.0W Turn-ON Time ton 0.35 0.8 Switching Times ms *4 RG=6.2W Fall Time tf 0.2 0.35 VGE=15V Turn-Off Time toff 0.5 1.0 Peak Forward Voltage Drop VFM V 2.5 3.5 IF=200A, VGE=0V Reverse Recovery Time trr 0.35 IF=200A, VGE=-10V, di/dt=300A/ms ms IGBT Rth(j-c) 0.11 Thermal Impedance Junction to case C/W FWD Rth(j-c) 0.20 Notes; *4:RG value is the test condition's value for decision of the switching times, not recommended value, please determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. Remark; The specification given herein, is subject to change without prior notice to improve product characteristics.
35
17 25 35 45
VGE=15V14V13V 400 Tc=25C
TYPICAL
VGE=15V14V13V 400 Tc=125C 12V
TYPICAL 12V
Collector Current, Ic (A)
Collector Current, Ic (A)
300 Pc=1130W 11V
300
11V 200
200
10V 100
100
10V
9V 9V 0 0 2 4 6 8 10 0 0 2 4 6 8 10
Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage
Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage
TYPICAL 10 Tc=25C 10 Tc=125C
TYPICAL
Collector to Emitter Voltage, VCE (V)
8
Collector to Emitter Voltage, VCE (V)
8
6
6
4 Ic=400A 2 Ic=200A
4 Ic=400A Ic=200A
2
0 0 5 10 15 20
0 0 5 10 15 20
Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage
Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage
TYPICAL 20 400 Vcc=600V Ic =200A Tc=25C VGE=0 Tc=25C Tc=125C 300
TYPICAL
Gate to Emitter Voltage, VGE (V)
10
Forward Current, IF (A)
0 500 1000 1500
15
200
5
100
0
0 0 1 2 3 4 5
Gate Charge, QG (nC) Gate charge characteristics
Forward Voltage, VF (V) Forward voltage of free-wheeling diode
PDE-M200GR12-0
TYPICAL 1.5 10 Vcc=600V VGE=15V RG=6.2 TC=25C Resistive Load VCC=600V VGE=15V IC =200A TC=25C Resistive Load
TYPICAL
Switching Time, t (s)
1
Switching Time, t (s)
ton 1 toff tr
0.5
toff ton tr tf
tf
0 0 100 200 300
0.1 1 10 100
Collector Current, IC (A) Switching time vs. Collector current
TYPICAL 40 100 VCC=600V VGE=15V RG=6.2 TC=125C Inductive Load Etoff Eton 20
Gate Resistance, RG () Switching time vs. Gate resistance
TYPICAL VCC=300V VGE=15V IC =200A TC=125C Inductive Load 10 Eton Etoff
30
Switching Loss, Eton, Etoff, Err (mJ/pulse)
Switching Loss, Eton,Etoff, Err (mJ/pulse)
Err
1
10 Err
0
0
100
200
300
0.1 1 10 100
Collector Current. IC (A) Switching loss vs. Collector current
Gate Resistance. RG () Switching loss vs. Gate resistance
10000 VGE=15V RG=6.2 TC125C 1000
1
Transient Thermal Impedance, Rth(j-c) (C/W)
Diode
Collector Current, Ic (A)
0.1 IGBT
100
0.01
10
1 0 200 400 600 800 1000 1200 1400
0.001 0.001
0.01
0.1
1
10
Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area
Time, t (s) Transient thermal impedance
PDE-M200GR12-0
HITACHI POWER SEMICONDUCTORS Notices
1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse

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