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SA7110B: 64 Bit Read-only Manchester Coded Transponder
FEATURES

EEPROM flexibility of data configuration 64 bits of OTP data factory programmed and locked Customer specific configuration of stored data Data output in Manchester mode Carrier frequency 100 to 300 kHz
On-chip resonance capacitor

No external charge storage capacitor required
On-chip full wave rectifier On-chip data modulator
On-chip high voltage protection / regulation On-chip RF frequency clock extractor / prescaler Low power dissipation
DESCRIPTION
This device is manufactured in the SAMES 1.2m N-well EEPROM process. It has 64 bits, factory preprogrammed and locked in EEPROM memory. Read data is Manchester coded. Data is read at the RF interface by means of the on-chip modulator. The stored bits are clocked out sequentially during the read operation. An internal power-on reset is provided which allows the device to start reading out data at low voltages for improved tag range.
The device has an on-chip rectification circuit that converts the incoming rf signal to DC power feeding VDD. APPLICATIONS There is also an on-chip data modulator, which works in Access Control conjunction with the rectifier. The time base is extracted by an on-chip RF clock extractor. High voltage protection .com Industrial automation across the coil inputs is provided internally. The energy is Asset tracking stored on capacitance on chip due to low internal power consumption. The device has an on-chip resonance capacitor connected between the COIL1 and COIL2 pads. These features result in a single external component count, comprised of, only the coil.
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SA7110B PAD CONNECTIONS
TEST 8
VSS 7
TEST 6
TEST 5
TEST 4
VDD 3
1
2
COIL1
COIL2
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PAD DESCRIPTION
PAD No. 1 2 3 4 5 6 7 8 NAME COIL1 COIL2 VDD TEST TEST TEST VSS TEST DESCRIPTION External coil connection External coil connection Supply voltage Test Pad Test Pad Test Pad Ground Test Pad
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SA7110B
BLOCK DIAGRAM
TEST
TEST
VSS
TEST Clock
Control Logic
EEPROM
VDD
TEST
Prescaler Power-on Reset Clock Extractor
VDD Full Wave Rectifier
VSS
Modulator
High Voltage Protection
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CR Resonance Capacitor
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COIL1
COIL2
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SA7110B ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage ESD protection C= 100pF R = 1.5Kohm , Human body model. MIL-STD-883C method 3015 Peak voltage across COIL1 or COIL2 to VSS Peak current through COIL 1,2 Storage temperature SYMBOL VDD MIN -0.3 MAX 9.4 UNIT V NOTE 1,2,3,4,5
Vpesd
-
TBD
V
3,8
VCOIL1,2 - VSS ICOIL1,2 Tst
-10 -30 -55
+10 +30 +125
V mA
o
3,6 3,7 3
C
Note 1: Note 2: Note 3:
Note 4: Note 5: Note 6:
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Note 7: Note 8:
Duration not to exceed 10 seconds, and no logic switching. Referenced to Vss Stresses above those listed under " absolute maximum ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating conditions section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. VDD level when absolute maximum current goes through coil inputs. VDD level when absolute maximum voltage is across coil inputs. Maximum peak voltage at COIL1 or COIL2 of incoming RF signal with VSS as reference. Clamping by front-end protection circuitry. .com DataShee Maximum allowed peak current of incoming RF signal. TBD - To be determined.
HANDLING PROCEDURES
Although the device has built-in ESD protection, adherence to anti-static procedures for CMOS devices is required.
ELECTRICAL CHARACTERISTICS
DC Operating Conditions
Parameter Dynamic current Static current Voltage when power-on reset comes out of reset Histereses on power-on rest Data retention Supply voltage Operating temperature Symbol IDD IDDS VPOR VPORH TDR VDD Top 1.2 200 10 2 -40 1.6 Min Typ 3 Max 6 1 2 600 5.5
1)
Unit A A V mV years V
o
Condition VDD = 3V VDD = 3V, clock stopped, COIL1 & COIL2 shorted to VSS During power-up VDD - VSS rising Between coming out of reset and going back into reset programmed At specified current at COIL1 or COIL2,
+70
C
Note: 1) maximum voltage is defined when forcing 10 mA on the coil inputs.
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SA7110B
AC Operating Conditions Clocking
Parameter RF carrier frequency at COIL1,2 Number of rf carrier cycles per bit Symbol fRF NB Min 50 32 Typ 125 64 Max 300 Unit kHz Condition Sustained RF from base station
Coil Inputs
Parameter Negative excursion of COIL1 or COIL2 Modulated voltage drop Symbol VCN Min -0.6 Typ -0.65 Max -0.7 Unit V Condition Peak level referenced to VSS Unmodulated COIL1 or COIL2 voltage referenced to VSS = 5.5V Unmodulated COIL1 or COIL2 voltage referenced to VSS = 5.0V Unmodulated COIL1 or COIL2 voltage referenced to VSS = 2.5 Measured between COIL1 and COIL2
VCM
TBD
3.3
TBD
V
Modulated voltage drop
VCM
TBD
3.0
TBD
V
Modulated voltage drop Resonance Capacitor
VCM CR
TBD
1)
0.875 170
TBD
1)
V pF
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Note: 1) for a single batch the tolerance is 3%. From batch to batch the tolerance is 30%. TBD - To be determined.
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SA7110B FUNCTIONAL DESCRIPTION
The circuit is built up out of several functional blocks, control logic, coil interface, the power-on reset, and the memory module (EEPROM). The chip activates automatically during power-up as a result of the built in power-on reset. locked in that way. This gives OTP (One Time Programmable) security. Memory map The flexibility of programming allows custom memory mapping. Control logic The control logic gets its clock from the clock extractor / prescaler and facilitates the reading of the data stored in the data EEPROM.
Coil Interface
Power is derived from a full wave rectifier bridge. Data modulation takes place by loading the coil inputs to the bridge with a modulating circuit. The coil interface includes on-chip high voltage protection. The system clock for the chip is derived by means of a clock extractor coupled to the rectifier circuit. The Clock extractor / prescaler is the time base generator for data reading. Data is read from the EEPROM to the coil interface where the rf signal is modulated by the data in the Manchester coded mode.
TIMING SPECIFICATIONS
The COIL1 and COIL2 pads modulate the incoming rf signal with Manchester encoded data. The data will repeatedly be read out serially until the power is reduced sufficiently to activate the power on reset again. There are 64 rf carrier cycles for each data bit. This is the nominal setting. An optional hardware setting of 32 rf cycles per bit can be selected during wafer manufacture.
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Memory Array Data storage: The data EEPROM is arranged in an 8X8 bit array composed of 8 columns of 8 bit bytes. The 64 bits of data stored in the array can be configured in any way as .com agreed with the client, and is factory programmed and
n = 64 RF clock cycles per data bit
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RF CLOCK
CL0 CL1 CL2 CL3 CL4 CL5 CL6 CL7 CL8 CLn-3 CLn-2 CLn-1
DATA
Dn-1
Dn
Dn+1
DATA OUTPUT Data output takes place according to Manchester encoding.
DATA
NO DATA DATA 0 DATA1 DATA2 DATA3 DATA4 DATA5 DATA6 DATA7 0 0 1 0 1 0 1 1
NO DATA
MANCHESTER
NO DATA2 DATA3 DATA4 DATA5 DATA6 DATA7 DATA DATA 0 DATA1 0 1 0 1 0 1 1 0
NO DATA
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SA7110B TYPICAL APPLICATION
The chip powers up via the COIL1 and COIL2 pads, deriving its energy from the rf carrier wave through the resonating tank circuit made up by the external inductor, LR, and internal capacitor, CR. An optional additional external capacitor can be added for special requirements. The data will automatically start modulating the rf signal as soon as the chip has powered up to the power-on reset level. The built in voltage protection and regulation insures protection against high voltage from the tank circuit.
TEST 8
VSS 7
TEST 6
TEST 5
TEST 4
VDD 3
CR
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1
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COIL1 COIL2
2
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LR
The value of L R is determined by the following relationship. fR = 1 / ( 2
LR *
C R)
Where fR is the resonance frequency. For a typical internal C R of 170 pf and for fR at 125 kHz, LR = 9.54 mH
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SA7110B PACKAGE AND ORDERING INFORMATION
PCB FORM
1.00 mm max 4.0mm
8.0 mm
Optional SMD capacitor*
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1.50 mm
Capacitor height**
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1.00 mm 2.66 mm
0.5 mm Board thickness 0.2mm max.
*Note that an optional SMD capacitor is not required normally due to internal capacitor on chip. The device is supplied without an SMD capacitor. **Note that the height of some SMD capacitors could exceed the height of the glob.
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SA7110B
CHIP FORM
177.75 110.75
VSS 161.75
177.75
845.5 1505.5 1592 1234.75 1524.5 100 179.5 COIL1 Optiona 142.75 l SMD 100 COIL 142.75 1810
179.5 VDD 1234.75
179.5
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.com Dimension are in micrometers IC Thickness is 280 micrometers 25 micrometers The outer dimensions of the IC is given as the distance from saw channel centre to saw channel centre and will be smaller than indicated due to material removed during sawing
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ORDERING INFORMATION
Data rate at 32 clocks per bit In Chip form SA7110 32 IC In PCB form SA7110 32 COB Data rate at 64 clocks per bit In Chip form SA7110 64 IC In PCB form SA7110 64 COB
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SA7110B
Disclaimer: The information contained in this document is confidential and proprietary to South African Micro-Electronic Systems (Pty) Ltd ("SAMES") and may not be copied or disclosed to a third party, in whole or in part, without the express written consent of SAMES. The information contained herein is current as of the date of publication; however, delivery of this document shall not under any circumstances create any implication that the information contained herein is correct as of any time subsequent to such date. SAMES does not undertake to inform any recipient of this document of any changes in the information contained herein, and SAMES expressly reserves the right to make changes in such information, without notification, even if such changes would render information contained herein inaccurate or incomplete. SAMES makes no representation or warranty that any circuit designed by reference to the information contained herein, will function without errors and as intended by the designer.
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Any sales or technical questions may be posted to our e-mail address below: id_security@sames.co.za For the latest updates on datasheets, please visit our web site:
http://www.sames.co.za
SOUTH AFRICAN MICRO-ELECTRONIC SYSTEMS (PTY) LTD Tel: 012 333-6021 Tel: Int +27 12 333-6021 Fax: 012 333-8071 Fax: Int +27 12 333-8071 P O Box 15888, Lynn East 0039, Republic of South Africa 33 Eland Street, Koedoespoort Industrial Area, Pretoria Republic of South Africa
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