 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| WTD1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Low VCE(sat) = -0.55(Typ.) (IC/IB=-4A/-0.1A) * Excellent DC Current Gain Characteristics 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25C) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TC = 25C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD Tj Tstg Value -30 -20 -6 -5 -10 20 +150 -55 to +150 Unit V V V A W C C Device Marking WTD1386 = 1386 WEITRON http://www.weitron.com.tw www.DataSheet.in 1/4 09-Sep-05 WTD1386 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-50A, IE=0 Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 Emitter-Base Breakdown Voltage IE=-50A, IC=0 Collector Cut-Off Current VCB=-20V, IE=0 Emitter-Cut-Off Current VEB=-5V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -30 -20 -6 Typ Max -500 -500 Unit V V V nA nA ON CHARACTERISTICS1 DC Current Gain VCE=-2V, IC=-0.5A Collector-Emitter Saturation Voltage IC=-4A, IB=-0.1A Note 1.Pulse Test : Pulse width 380s, Duty cycle 2%. hFE VCE(sat) 82 580 -1.0 V DYNAMIC CHARACTERISTICS Transition Frequency VCE=-6V, IE=50mA, f=30MHz Output Capacitance VCB=-20V, IE=0, f=1MHz fT Cob 120 60 MHz pF CLASSIFICATION OF hFE Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 E 370 - 580 WEITRON http://www.weitron.com.tw www.DataSheet.in 2/4 09-Sep-05 WTD1386 1000 1000 Saturation Voltage (mV) 100 hFE hFE@VCE=2V VCE(sat)@IC=20IB VCE(sat)@IC=40IB 10 100 1 1 10 100 1000 10000 1 10 100 1000 10000 Fig.1 Current Gain & Collector Current Collector Current-IC (mA) Fig.2 Saturation Voltage & Collector Current Collector Current-IC (mA) 10000 1000 Saturation Voltage (mV) 1000 Capacitance (pF) 100 Cob VBE(sat)@IC=20IB 1 1 10 100 1000 10000 1 Fig.3 Saturation Voltage & Collector Current Collector Current-IC (mA) 0.1 1 10 100 Reverse Biased Voltage (V) Fig.4 Capacitance & Reverse-Biased Voltage 25 20 10 PD(W), Power Dissipation Collector Current-IC (A) 1 PT=1mS PT=100mS PT=1S 15 10 0.1 5 0.01 0 0 20 40 60 80 100 120 140 160 1 10 100 Fig.5 TC(C), Ambient Temperature Power Derating Forward Voltage (V) Fig.6 Safe Operating Area http://www.weitron.com.tw WEITRON 3/4 09-Sep-05 WTD1386 TO-252 Outline Dimensions unit:mm E A 4 TO-252 G H J 1 2 3 B M D C L K Dim A B C D E G H J K L M Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 WEITRON http://www.weitron.com.tw www.DataSheet.in 4/4 09-Sep-05 |
Price & Availability of WTD1386
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |