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AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .P .10: .SI .EMI .REFRACTORY/ .LOW .I .CHARACTERI DESCRIPTION OUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 1 LOAD VSWR CAPABILITY @ 10S., 1% DUTY XPACTM HERMETIC METAL/CERAMIC PACKAGE TTER SITE BALLASTED OVERLAY GEOMETRY GOLD METALLIZATION THERMAL RESISTANCE NTERNAL INPUT/OUTPUT MATCHING ZED UNDER 32S.,2% DUTY CYCLE PULSE CONDITIONS .400 x .600 2LFL (M198) hermetically sealed ORDER CODE AM1011-500 BRANDING 1011-500 PIN CONNECTION The AM1011-500 device is a high power Class C transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1011-500 is supplied in the SIXPACTM Hermetic metal/ceramic package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC 100C) 1,360 27 55 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.11 C/W *Applies only to rated RF amplifier operation January 27, 1995 1/4 AM1011-500 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCES ICES hFE IC = 50 mA IE = 30 mA IC = 50 mA VBE = 0 V VCE = 5 V IE = 0 mA IC = 0 mA VBE = 0 V VCE = 50 V IC = 1.0 A 70 3.0 70 -- 10 -- -- -- -- -- -- -- -- 40 200 V V V mA -- DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT hc GP f = 1090 MHz f = 1090 MHz f = 1090 MHz PIN = 70 W POUT = 500 W POUT = 500 W VCC = 50 V VCC = 50 V VCC = 50 V 500 40 8.5 -- -- -- -- -- -- W % dB Load POUT = 500 W Peak VSWR = 10:1, 10S, 1% Duty Mismatch F = 1090MHz VSWR = 5:1, 32S, 2% Duty VCC = 50 V Note: Pulse Width = 32Sec, Duty Cycle = 2% No Degradation in Output Power TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT POUT POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT POUT C C * Pulse Burst conditions: 128 Sec train, 0.5 Sec on, 0.5 Sec off; with a period of 6.4 msec. January 27, 1995 2/4 AM1011-500 IMPEDANCE DATA FREQ. 1030 MHz 1090 MHz 1120 MHz PIN = 70W VCC = 50V ZIN() 4.35 + j 6.97 4.38 + j 2.75 4.69 + j 2.95 ZCL() 1.38 - j 4.08 .874 - j 3.55 1.3 - j 4.97 TEST CIRCUIT January 27, 1995 3/4 AM1011-500 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0198 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. January 27, 1995 4/4 |
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