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| High Performance InGaAs p-i-n Photodiode `ST' Active Device Mount 13PD150-ST The 13PD150-ST, an InGaAs photodiode with a 150m-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high coupling efficiency to multi-mode fiber in moderate-to-high speed applications. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by hermetic sealing and a 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ). The ST receptacle is suitable for bulkhead and PC board mounting. Features Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity Device Characteristics: Parameters Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Test Conditions -5V -5V 1300nm - Min 0.5 1.5 0.7 - Typ - Max -20 nA pF 0.5 Units Volts 2.5 2.25 0.8 - A/W ns Absolute Maximum Ratings 20 Volts 5 mA 1 mA o -40 C to + 85oC -40oC to + 85oC 250oC 829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502 |
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