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| Large Area InGaAs p-i-n Photodiode 35PD1M-TO The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive region and packaged in a TO-46 header, is designed for applications in high sensitivity instrumentation and sensing. Devices are hermetically sealed in a TO-46 header. Low dark current and high dynamic impedance are featured. High reliability is achieved through planar semiconductor design and dielectric-passivation. Chips can also be attached and wire bonded to customersupplied or other specified packages. Features Planar Structure Dielectric Passivation High Dynamic Impedance High Responsivity Device Characteristics: Parameters Dark Current Test Conditions Class A Class B Class C -1.0V Min - Typ 2 100 1 150 15 Max - Units nA nA A Capacitance Responsivity Rise/Fall Dynamic Impedance Class A Class B Class C 0V 1300nm 1550nm 0V 0.9 1.0 - pF A/W A/W ns M ohm M ohm M ohm 50 1.0 0.15 - Absolute Maximum Ratings Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature 15 Volts 100 mA 20 mA -40oC to + 85oC -40oC to + 85oC 250oC 829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502 |
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