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APTGS50X170E2
3 Phase bridge NPT IGBT Power Module
Application * AC Motor control
VCES = 1700V IC = 50A @ Tc = 80C
Features
*
* * * Pin out: APTGS50X170E2 (Long pins)
NU V W P+
- Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration
Non Punch Through (NPT) Low Loss IGBT(R)
Benefits * * * * * * * Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile
1 2 3 4 5 6 7 8 9 10 11 12
All ratings @ Tj = 25C unless otherwise specified Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area
A V W
TC = 25C Tj = 125C
100A@1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-3
APTGS50X170E2- Rev 0
November, 2003
TC = 25C TC = 80C TC = 25C
Max ratings 1700 100 50 150 20 350
Unit V
APTGS50X170E2
Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 1mA Tj = 25C VGE = 0V VCE = 1700V Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 2.2 mA VGE = 20V, VCE = 0V Min
1700
Typ 0.02 1 2.7 3.2
Max 0.1 3.3 6.5 100
Unit V mA V V nA
3
Dynamic Characteristics
Symbol Characteristic Cies Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Input Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Off Energy
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 50A RG = 30 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 50A RG = 30
Min
Typ 3500 100 100 800 30 100 100 900 30 30
Max
Unit pF
ns
ns mJ
Reverse diode ratings and characteristics
Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge
Test Conditions IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =750A/s IF = 50A VR = 900V di/dt =750A/s
Min Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ 2.2 2.0 2 4 6 12
Max 2.6
Unit V mJ C
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight IGBT Diode
Min
Typ
Max 0.37 0.63 150 125 125 3.5 185
Unit
C/W
3400 -40 -40 -40 2
V C N.m g
November, 2003 2-3 APTGS50X170E2- Rev 0
M5
APT website - http://www.advancedpower.com
APTGS50X170E2
Package outline
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
3-3
APTGS50X170E2- Rev 0
APT reserves the right to change, without notice, the specifications and information contained herein
November, 2003

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